公开(公告)号：US06350818B1

公开(公告)日：2002-02-26

申请号：US09413679

申请日：1999-10-07

申请人： Sung-Eun Hong ,  Min-Ho Jung ,  Hyeong-Soo Kim ,  Ki-Ho Baik

发明人： Sung-Eun Hong ,  Min-Ho Jung ,  Hyeong-Soo Kim ,  Ki-Ho Baik

IPC分类号： C08F834

CPC分类号： C08F212/14 ,  C08F8/34 ,  G03F7/023 ,  G03F7/091 ,  C08F12/14 ,  C08F220/20

摘要： The present invention relates to organic anti-reflective coating polymers and preparation methods therefor. Anti-reflective coatings are used in a semiconductor device during photolithography processes to prevent the reflection of light from lower layers of the device, or resulting from changes in the thickness of the photoresist layer, and to eliminate the standing wave effect when ArF light is used. The present invention also relates to anti-reflective compositions and coatings containing these organic anti-reflective coating polymers, alone or in combination with certain light-absorbing compounds, and preparation methods therefor. When the polymers of the present invention are used in an anti-reflective coating in a photolithography process for forming submicro-patterns, the resultant elimination of changes in CD due to diffractive and reflective lights originating from lower layers increases the product yield in the formation of submicro-patterns during the manufacture of 64 M, 256 M, 1G, 4G and 16G DRAM semiconductor devices.

摘要翻译： 本发明涉及有机抗反射涂层聚合物及其制备方法。 在光刻工艺中，抗反射涂层用于半导体器件，以防止来自器件的下层的光的反射，或由于光致抗蚀剂层的厚度的变化而导致的，并且当使用ArF光时消除驻波效应 。 本发明还涉及包含这些有机抗反射涂层聚合物的抗反射组合物和涂层，其单独或与某些光吸收化合物组合，及其制备方法。 当本发明的聚合物在用于形成亚微图案的光刻工艺中用于抗反射涂层中时，由于衍生于较低层的衍射和反射光引起的CD的变化的消除增加了在形成 在64M，256M，1G，4G和16G DRAM半导体器件的制造期间的微小图案。

公开(公告)号：US06492441B2

公开(公告)日：2002-12-10

申请号：US10015333

申请日：2001-12-11

申请人： Sung-Eun Hong ,  Min-Ho Jung ,  Hyeong-Soo Kim ,  Ki-Ho Baik

发明人： Sung-Eun Hong ,  Min-Ho Jung ,  Hyeong-Soo Kim ,  Ki-Ho Baik

IPC分类号： C08K534

CPC分类号： C08F212/14 ,  C08F8/34 ,  G03F7/023 ,  G03F7/091 ,  C08F12/14 ,  C08F220/20

摘要： The present invention relates to organic anti-reflective coating polymers and preparation methods therefor. Anti-reflective coatings are used in a semiconductor device during photolithography processes to prevent the reflection of light from lower layers of the device, or resulting from changes in the thickness of the photoresist layer, and to eliminate the standing wave effect when ArF light is used. The present invention also relates to anti-reflective compositions and coatings containing these organic anti-reflective coating polymers, alone or in combination with certain light-absorbing compounds, and preparation methods therefor. When the polymers of the present invention are used in an anti-reflective coating in a photolithography process for forming submicro-patterns, the resultant elimination of changes in CD due to diffractive and reflective lights originating from lower layers increases the product yield in the formation of submicro-patterns during the manufacture of 64 M, 256 M, 1 G, 4 G and 16 G DRAM semiconductor devices.

摘要翻译： 本发明涉及有机抗反射涂层聚合物及其制备方法。 在光刻工艺中，抗反射涂层用于半导体器件，以防止来自器件的下层的光的反射，或由于光致抗蚀剂层的厚度的变化而导致的，并且当使用ArF光时消除驻波效应 。 本发明还涉及包含这些有机抗反射涂层聚合物的抗反射组合物和涂层，其单独或与某些光吸收化合物组合，及其制备方法。 当本发明的聚合物在用于形成亚微图案的光刻工艺中用于抗反射涂层中时，由于衍生于较低层的衍射和反射光引起的CD的变化的消除增加了在形成 在制造64M，256M，1G，4G和16G DRAM半导体器件期间的微小图案。

公开(公告)号：US06780953B2

公开(公告)日：2004-08-24

申请号：US10293022

申请日：2002-11-12

申请人： Min-Ho Jung ,  Sung-Eun Hong ,  Ki-Ho Baik

发明人： Min-Ho Jung ,  Sung-Eun Hong ,  Ki-Ho Baik

IPC分类号： C08F22068

CPC分类号： C07C69/54 ,  C07C2603/24 ,  C08F220/14 ,  C08F220/18 ,  C08F220/28

摘要： The present invention provides a polymer that can be used as an anti-reflective coating (ARC) polymer, an ARC composition comprising the same, methods for producing the same, and methods for using the same. The polymer of the present invention is particularly useful in a submicrolithographic process, for example, using KrF (248 nm) or ArF (193 nm) lasers as a light source. The polymer of the present invention comprises a chromophore that is capable of absorbing light at the wavelengths used in a submicrolithographic process. Thus, the ARC of the present invention significantly reduces or prevents back reflection of light and the problem of the CD alteration caused by the diffracted and/or reflected light. The ARC of the present invention also significantly reduces or eliminates the standing wave effect and reflective notching. Therefore, the polymer of the present invention can be used to produce a stable ultrafine pattern that is suitable in manufacturing of 64M, 256M, 1G, 4G and 16G DRAM semiconductor devices. Moreover, the ARC of the present invention significantly improves the production yield of such semiconductor devices.

摘要翻译： 本发明提供可用作抗反射涂层（ARC）聚合物的聚合物，包含其的ARC组合物，其制备方法及其使用方法。 本发明的聚合物在例如使用KrF（248nm）或ArF（193nm）激光器作为光源的亚微光刻工艺中特别有用。 本发明的聚合物包括能够吸收在亚微光刻工艺中使用的波长的光的发色团。 因此，本发明的ARC显着地减少或防止了光的反射和由衍射光和/或反射光引起的CD改变的问题。 本发明的ARC还显着地减少或消除驻波效应和反射性切口。 因此，本发明的聚合物可以用于制造适合于制造64M，256M，1G，4G和16G DRAM半导体器件的稳定超细晶格。 此外，本发明的ARC显着提高了这种半导体器件的生产成本。

公开(公告)号：US06593446B1

公开(公告)日：2003-07-15

申请号：US09657069

申请日：2000-09-07

申请人： Jae-Chang Jung ,  Keun-Kyu Kong ,  Min-Ho Jung ,  Sung-Eun Hong ,  Geun-Su Lee ,  Ki-Ho Baik

发明人： Jae-Chang Jung ,  Keun-Kyu Kong ,  Min-Ho Jung ,  Sung-Eun Hong ,  Geun-Su Lee ,  Ki-Ho Baik

IPC分类号： C08G600

CPC分类号： G03F7/091 ,  C08F212/08 ,  C08F216/38 ,  C08K5/42 ,  C08L25/08 ,  C08L29/14 ,  C08L33/066 ,  C09D125/08 ,  C09D129/14 ,  G03F7/0045 ,  G03F7/038 ,  C08L2666/04 ,  C08F2220/1808 ,  C08F212/14

摘要： The present invention provides an organic anti-reflective film composition suitable for use in submicrolithography. The composition comprises a compound of chemical formula 11 and a compound of chemical formula 12. The organic anti-reflective film effectively absorbs the light penetrating through the photoresist film coated on top of the anti-reflective film, thereby greatly reducing the standing wave effect. Use of organic anti-reflective films of the present invention allows patterns to be formed in a well-defined, ultrafine configuration, providing a great contribution to the high integration of semiconductor devices. wherein a, b, c, R′, R″, R1, R2, R3, and R4 are those defined herein.

摘要翻译： 本发明提供适用于亚微光刻的有机抗反射膜组合物。 该组合物包含化学式11的化合物和化学式12的化合物。有机抗反射膜有效地吸收穿过抗反射膜顶部的光致抗蚀剂膜的光，从而大大降低了驻波效应。 使用本发明的有机抗反射膜允许以明确限定的超细结构形成图案，为半导体器件的高集成度提供了巨大的贡献。其中a，b，c，R'，R“ ，R1，R2，R3和R4是本文定义的那些。

公开(公告)号：US06548613B2

公开(公告)日：2003-04-15

申请号：US09747364

申请日：2000-12-22

申请人： Min-Ho Jung ,  Sung-Eun Hong ,  Jae-Chang Jung ,  Geun-Su Lee ,  Ki-Ho Baik

发明人： Min-Ho Jung ,  Sung-Eun Hong ,  Jae-Chang Jung ,  Geun-Su Lee ,  Ki-Ho Baik

IPC分类号： C08F22018

CPC分类号： C08F220/34 ,  G03F7/091

摘要： The present invention provides a polymer that can be used as an anti-refelctive coating (ARC) polymer, an ARC composition comprising the same, methods for producing the same, and methods for using the same. The polymer of the present invention is particularly useful in a submicrolithographic process, for example, using KrF (248 nm), ArF (193 nm), or F2 (157 nm) laser as a light source. The polymer of the present invention comprises a chromophore that is capable of absorbing light at the wavelengths used in a submicrolithographic process. Thus, the ARC of the present invention significantly reduces or prevents back reflection of light and the problem of the CD alteration caused by the diffracted and/or reflected light. The ARC of the present invention also significantly reduces or eliminates the standing wave effect and reflective notching. Therefore, the polymer of the present invention can be used to produce a stable ultrafine pattern that is suitable in manufacturing of 64 M, 256 M, 1 G, 4 G and 16 G DRAM semiconductor devices. Moreover, the ARC of the present invention significantly improves the production yield, of such semiconductor devices.

摘要翻译： 本发明提供可用作抗反射涂层（ARC）聚合物的聚合物，包含其的ARC组合物，其制备方法及其使用方法。 本发明的聚合物在亚微光刻工艺中特别有用，例如使用KrF（248nm），ArF（193nm）或F2（157nm）激光作为光源。 本发明的聚合物包括能够吸收在亚微光刻工艺中使用的波长的光的发色团。 因此，本发明的ARC显着地减少或防止了光的反射和由衍射光和/或反射光引起的CD改变的问题。 本发明的ARC还显着地减少或消除驻波效应和反射性切口。 因此，本发明的聚合物可用于制备适合于制造64M，256M，1G，4G和16G DRAM半导体器件的稳定超细晶格。 此外，本发明的ARC显着提高了这种半导体器件的生产成本。

公开(公告)号：US06388039B1

公开(公告)日：2002-05-14

申请号：US09602655

申请日：2000-06-22

申请人： Min-Ho Jung ,  Sung-Eun Hong ,  Ki-Ho Baik

发明人： Min-Ho Jung ,  Sung-Eun Hong ,  Ki-Ho Baik

IPC分类号： C08F22012

CPC分类号： C08F220/34 ,  C07C251/66 ,  C08F2220/281 ,  C08F2220/325 ,  C08F220/14

摘要： Polymers are disclosed having the following formula 1 or 2: Polymers of the present invention can be used as an ARC material useful for submicrolithography processes using 248 nm KrF, 193 nm ArF and 157 nm F2 lasers. The polymers contain a chromophore substituent that exhibits sufficient absorbance at the wavelengths useful for the submicrolithography process. The ARC prevents back reflection of light from lower layers and the alteration of the CD by diffracted and reflected light from the lower layers. The ARC also eliminates standing waves and reflective notching due to the optical properties of lower layers on the wafer and to changes in the thickness of the photosensitive film applied thereon, thereby resulting in the stable formation of ultrafine patterns suitable for 64M, 256M, 1G, 4G and 16G DRAMs and a great improvement in the production yield.

摘要翻译： 公开了具有下式1或2的聚合物：本发明的聚合物可以用作ARC光学材料，用于使用248nm KrF，193nm ArF和157nm F2激光的亚微光刻工艺。 聚合物含有在用于亚微光刻工艺的波长处表现出足够吸光度的发色团取代基。 ARC防止来自下层的光的背反射和来自下层的衍射和反射光的CD的改变。 由于晶片上的较低层的光学特性和施加在其上的感光膜的厚度的变化，ARC还消除了驻波和反射凹陷，从而导致适合于64M，256M，1G， 4G和16G DRAM，并且生产产量大大提高。

公开(公告)号：US06489432B2

公开(公告)日：2002-12-03

申请号：US09747362

申请日：2000-12-22

申请人： Min-Ho Jung ,  Sung-Eun Hong ,  Jae-Chang Jung ,  Geun-Su Lee ,  Ki-Ho Baik

发明人： Min-Ho Jung ,  Sung-Eun Hong ,  Jae-Chang Jung ,  Geun-Su Lee ,  Ki-Ho Baik

IPC分类号： C08G224

CPC分类号： C08F8/00 ,  C08F2800/10 ,  C08F116/36

摘要： The present invention provides a polymer that can be used as an anti-refelctive coating (ARC) polymer, an ARC composition comprising the same, methods for producing the same, and methods for using the same. The polymer of the present invention is particularly useful in a submicrolithographic process, for example, using KrF (248 nm), ArF (193 nm), or F2 (157 nm) laser as a light source. The polymer of the present invention comprises a chromophore that is capable of absorbing light at the wavelengths used in a submicrolithographic process. Thus, the ARC of the present invention significantly reduces or prevents back reflection of light and the problem of the CD alteration caused by the diffracted and/or reflected light. The ARC of the present invention also significantly reduces or eliminates the standing wave effect and reflective notching. Therefore, the polymer of the present invention can be used to produce a stable ultrafine pattern that is suitable in manufacturing of 64M, 256M, 1G, 4G and 16G DRAM semiconductor devices. Moreover, the ARC of the present invention significantly improves the production yield of such semiconductor devices.

摘要翻译： 本发明提供可用作抗反射涂层（ARC）聚合物的聚合物，包含其的ARC组合物，其制备方法及其使用方法。 本发明的聚合物在亚微光刻工艺中特别有用，例如使用KrF（248nm），ArF（193nm）或F2（157nm）激光作为光源。 本发明的聚合物包括能够吸收在亚微光刻工艺中使用的波长的光的发色团。 因此，本发明的ARC显着地减少或防止了光的反射和由衍射光和/或反射光引起的CD改变的问题。 本发明的ARC还显着地减少或消除驻波效应和反射性切口。 因此，本发明的聚合物可以用于制造适合于制造64M，256M，1G，4G和16G DRAM半导体器件的稳定超细晶格。 此外，本发明的ARC显着提高了这种半导体器件的生产成本。

公开(公告)号：US06368768B1

公开(公告)日：2002-04-09

申请号：US09501049

申请日：2000-02-09

申请人： Min-Ho Jung ,  Sung-Eun Hong ,  Ki-Ho Baik

发明人： Min-Ho Jung ,  Sung-Eun Hong ,  Ki-Ho Baik

IPC分类号： G03F7004

CPC分类号： C08F20/18 ,  C07C69/54 ,  C07C2603/24

摘要： Polymers are provided having the following formula I, II or III: Polymers of the present invention can be used to provide an anti-reflective coating (ARC) material useful for submicrolithography processes using 248 nm KrF, 193 nm ArF and 157 nm F2 lasers. The polymers contain chromophore substituents which exhibit sufficient absorbance at wavelengths useful for such submicrolithography process. The ARC prevents back reflection from the surface of or lower layers in the semiconductor devices and solves the problem of the CD being altered by the diffracted and reflected light from such lower layers. The ARC also eliminates the standing waves and reflective notching due to the optical properties of lower layers on the wafer, and due to the changes in the thickness of the photosensitive film applied thereon. This results in the formation of stable ultrafine patterns suitable for 64M, 256M, 1 G, 4 G and 16 G DRAM semiconductor devices and a great improvement in the production yield.

摘要翻译： 提供具有下列式I，II或III的聚合物：本发明的聚合物可用于提供使用248nm KrF，193nm ArF和157nm F2激光的用于亚微光刻工艺的抗反射涂层（ARC）材料。 聚合物含有发色团取代基，其在用于这种亚微光刻工艺的波长下表现出足够的吸光度。 ARC防止半导体器件中的表面或下层的背反射，并且解决了CD被来自这种较低层的衍射和反射光改变的问题。 由于晶片上的下层的光学特性，并且由于其上施加的感光膜的厚度的变化，ARC还消除了驻波和反射性凹陷。 这导致形成适合64M，256M，1G，4G和16G DRAM半导体器件的稳定超细格局，并且生产产量大大提高。

公开(公告)号：US06309790B1

公开(公告)日：2001-10-30

申请号：US09499873

申请日：2000-02-07

申请人： Min-Ho Jung ,  Sung-Eun Hong ,  Ki-Ho Baik

发明人： Min-Ho Jung ,  Sung-Eun Hong ,  Ki-Ho Baik

IPC分类号： G03F7004

CPC分类号： H01L21/02118 ,  C07C67/14 ,  C07C69/54 ,  C07C2603/24 ,  C08F220/18 ,  C08F220/28 ,  C08F220/32 ,  C09D133/068 ,  C09D133/14 ,  H01L21/02282 ,  H01L21/0276 ,  H01L21/312 ,  Y10S430/111

摘要： Polymers are provided having the following formulas I and II: Polymers of the present invention can be used to provide an anti-reflective coating (ARC) material useful for submicrolithography processes using 248 nm KrF, 193 nm ArF and 157 nm F2 lasers. The polymers contain chromophore substituents which exhibit sufficient absorbance at wavelengths useful for such submicrolithography process. The ARC prevents back reflection from the surface of or lower layers in the semiconductor devices and solves the problem of the CD being altered by the diffracted and reflected light from such lower layers.

摘要翻译： 提供具有以下分子式I和II的聚合物：本发明的聚合物可用于提供使用248nm KrF，193nm ArF和157nm F2激光器的用于亚微光刻工艺的抗反射涂层（ARC）材料。 聚合物含有发色团取代基，其在用于这种亚微光刻工艺的波长下表现出足够的吸光度。 ARC防止半导体器件中的表面或下层的背反射，并且解决了CD被来自这种较低层的衍射和反射光改变的问题。

公开(公告)号：US06538090B2

公开(公告)日：2003-03-25

申请号：US10095417

申请日：2002-03-11

申请人： Min-Ho Jung ,  Sung-Eun Hong ,  Ki-Ho Baik

发明人： Min-Ho Jung ,  Sung-Eun Hong ,  Ki-Ho Baik

IPC分类号： C08F22012

CPC分类号： C08F220/34 ,  C07C251/66 ,  C08F2220/281 ,  C08F2220/325 ,  C08F220/14

摘要： Polymers are disclosed having the following formula 1 or 2: Polymers of the present invention can be used as an ARC material useful for submicrolithography processes using 248 nm KrF, 193 nm ArF and 157 nm F2 lasers. The polymers contain a chromophore substituent that exhibits sufficient absorbance at the wavelengths useful for the submicrolithography process. The ARC prevents back reflection of light from lower layers and the alteration of the CD by diffracted and reflected light from the lower layers. The ARC also eliminates standing waves and reflective notching due to the optical properties of lower layers on the wafer and to changes in the thickness of the photosensitive film applied thereon, thereby resulting in the stable formation of ultrafine patterns suitable for 64M, 256M, 1 G, 4 G and 16 G DRAMs and a great improvement in the production yield.

摘要翻译： 公开了具有下式1或2的聚合物：本发明的聚合物可以用作ARC光学材料，用于使用248nm KrF，193nm ArF和157nm F2激光的亚微光刻工艺。 聚合物含有在用于亚微光刻工艺的波长处表现出足够吸光度的发色团取代基。 ARC防止来自下层的光的背反射和来自下层的衍射和反射光的CD的改变。 由于晶片上的较低层的光学性质和施加在其上的感光膜的厚度的变化，ARC还消除了驻波和反射凹陷，从而导致适合于64M，256M，1G ，4G和16G DRAM，并且生产产量大大提高。