公开(公告)号：US6090706A

公开(公告)日：2000-07-18

申请号：US140818

申请日：1998-08-26

申请人： Susan Weiher Telford ,  Michio Aruga ,  Mei Chang

发明人： Susan Weiher Telford ,  Michio Aruga ,  Mei Chang

IPC分类号： C23C16/42 ,  C23C16/44 ,  H01L21/44

CPC分类号： C23C16/4404 ,  C23C16/42 ,  Y10S438/906

摘要： A process is disclosed for preconditioning surfaces of a tungsten silicide deposition chamber, after a previous step of cleaning the chamber, and prior to depositing tungsten silicide on active substrates in the chamber, which first comprises treating the chamber surfaces with a gaseous silicon source, such as silane, and a tungsten-bearing gas, such as WF.sub.6, to form a first deposition of a silane-based tungsten silicide on the chamber surfaces. In a preferred embodiment, the preconditioning process further comprises subsequently treating the already coated chamber surfaces in a second step with a mixture of a tungsten-bearing gas, such as WF.sub.6, and a chlorine-substituted silane such as dichlorosilane (SiH.sub.2 Cl.sub.2), monochlorosilane (SiH.sub.3 Cl), or trichlorosilane (SiHCl.sub.3) to form a chlorine-substituted silane-based tungsten silicide deposition over the previous deposited tungsten silicide, prior to commencement of depositing tungsten silicide on active substrates in the deposition chamber.

摘要翻译： 公开了一种用于预处理硅化钨沉积室的表面的方法，在先前的清洁腔室之后，以及在室中的有源衬底上沉积钨硅化物之前，首先包括用气态硅源处理室表面， 作为硅烷和含钨气体，例如WF 6，以在室表面上形成硅烷基硅化钨的第一次沉积。 在优选的实施方案中，预处理方法还包括随后在第二步中用含钨气体（例如WF 6）和氯取代的硅烷如二氯硅烷（SiH 2 Cl 2），一氯硅烷（SiCl 2） SiHCl 3）或三氯硅烷（SiHCl 3），以在淀积室中的活性基底上沉积钨硅化物之前，在先前沉积的硅化钨上形成氯取代的硅烷基硅化钨沉积物。