公开(公告)号：US20100248623A1

公开(公告)日：2010-09-30

申请号：US12659795

申请日：2010-03-22

申请人： Susumu Haratani ,  Hitoshi Yamaguchi ,  Masahiro Miyazaki ,  Yoshio Sase ,  Shigeru Shimura

发明人： Susumu Haratani ,  Hitoshi Yamaguchi ,  Masahiro Miyazaki ,  Yoshio Sase ,  Shigeru Shimura

IPC分类号： H04B1/02

CPC分类号： H04B5/0031 ,  H04B5/0081

摘要： A signal transmission device includes: an input signal conductor in which an input signal current flows and thereby generating an input signal magnetic field; a magnetically-biasing conductor in which a biasing current flows and thereby generating a biasing magnetic field; and one or more magnetoresistive elements in each of which a sensing current flows and thereby generating a self-biasing magnetic field, and each including a magnetization free layer having a magnetization direction which varies in response to the input signal magnetic field, the biasing magnetic field, and the self-biasing magnetic field. Each of the biasing magnetic field and the self-biasing magnetic field is applied to the magnetization free layer in a same direction to each other.

摘要翻译： 信号传输装置包括：输入信号导体，其中输入信号电流流动，从而产生输入信号磁场; 磁偏置导体，其中偏置电流流动，从而产生偏置磁场; 以及一个或多个磁阻元件，其中每一个感测电流流动，从而产生自偏置磁场，并且每个磁阻元件包括响应于输入信号磁场而变化的磁化方向的磁化自由层，偏置磁场 ，和自偏磁场。 偏置磁场和自偏磁场中的每一个以彼此相同的方向施加到磁化自由层。

公开(公告)号：US08326222B2

公开(公告)日：2012-12-04

申请号：US12659795

申请日：2010-03-22

申请人： Susumu Haratani ,  Hitoshi Yamaguchi ,  Masahiro Miyazaki ,  Yoshio Sase ,  Shigeru Shimura

发明人： Susumu Haratani ,  Hitoshi Yamaguchi ,  Masahiro Miyazaki ,  Yoshio Sase ,  Shigeru Shimura

IPC分类号： H04B5/00 ,  G02B27/00

CPC分类号： H04B5/0031 ,  H04B5/0081

摘要： A signal transmission device includes: an input signal conductor in which an input signal current flows and thereby generating an input signal magnetic field; a magnetically-biasing conductor in which a biasing current flows and thereby generating a biasing magnetic field; and one or more magnetoresistive elements in each of which a sensing current flows and thereby generating a self-biasing magnetic field, and each including a magnetization free layer having a magnetization direction which varies in response to the input signal magnetic field, the biasing magnetic field, and the self-biasing magnetic field. Each of the biasing magnetic field and the self-biasing magnetic field is applied to the magnetization free layer in a same direction to each other.

摘要翻译： 信号传输装置包括：输入信号导体，其中输入信号电流流动，从而产生输入信号磁场; 磁偏置导体，其中偏置电流流动，从而产生偏置磁场; 以及一个或多个磁阻元件，其中每一个感测电流流动，从而产生自偏置磁场，并且每个磁阻元件包括响应于输入信号磁场而变化的磁化方向的磁化自由层，偏置磁场 ，和自偏磁场。 偏置磁场和自偏磁场中的每一个以彼此相同的方向施加到磁化自由层。

公开(公告)号：US08593134B2

公开(公告)日：2013-11-26

申请号：US13042833

申请日：2011-03-08

申请人： Susumu Haratani ,  Hitoshi Yamaguchi ,  Masahiro Miyazaki ,  Shigeru Shimura

发明人： Susumu Haratani ,  Hitoshi Yamaguchi ,  Masahiro Miyazaki ,  Shigeru Shimura

IPC分类号： G01R15/20

CPC分类号： G01R15/205 ,  B82Y25/00 ,  G01R33/093

摘要： A current sensor includes first to fourth magneto-resistive elements each having a resistance value; and a compensation current line applying a compensation magnetic field to the magneto-resistive elements. A bridge circuit is formed by the magneto-resistive elements. Resistance values of the first and third magneto-resistive elements change together in one increasing/decreasing direction. Resistance values of the second and fourth magneto-resistive elements change together in the other increasing/decreasing direction. The compensation current is generated by a potential difference between the first and second junctions in response to application of voltage between the third and fourth junctions. The compensation current line includes first to fourth line portions. Each line portion extends in the same direction as the extending direction of the magneto-resistive elements, overlaps the corresponding magneto-resistive elements, and. The current-to-be-detected is detected based on the compensation current.

摘要翻译： 电流传感器包括各自具有电阻值的第一至第四磁阻元件; 以及向磁阻元件施加补偿磁场的补偿电流线。 桥接电路由磁阻元件形成。 第一和第三磁阻元件的电阻值在一个递减方向上一起变化。 第二和第四磁阻元件的电阻值在另一个增加/减小方向上一起变化。 响应于在第三和第四结之间的电压施加，补偿电流由第一和第二结之间的电位差产生。 补偿电流线包括第一至第四线部分。 每个线部分沿与磁阻元件的延伸方向相同的方向延伸，与相应的磁阻元件重叠。 基于补偿电流检测要检测的电流。

公开(公告)号：US07948349B2

公开(公告)日：2011-05-24

申请号：US12289384

申请日：2008-10-27

申请人： Susumu Haratani ,  Hitoshi Yamaguchi

发明人： Susumu Haratani ,  Hitoshi Yamaguchi

IPC分类号： H01F17/04

CPC分类号： G01R33/09 ,  G01R33/091 ,  H01F5/003 ,  H01F38/14

摘要： A magnetic coupler having higher response is provided. The magnetic coupler includes a thin film coil wound in a first layer; a first MR element being disposed in a second layer, and detecting an induced magnetic field generated by a signal current flowing through the thin film coil; and yokes being disposed close to the first MR element, and including a soft magnetic material. The first MR element is disposed in a position corresponding to a linear region of the thin film coil in a stacking direction. The yokes are disposed at both of an inner turn side and an outer turn side of the thin film coil in a manner of interposing the first MR element in the second layer. Thus, reduction in intensity of the induced magnetic field is suppressed, and intensity distribution of the induced magnetic field becomes flatter.

摘要翻译： 提供了具有较高响应的磁耦合器。 磁耦合器包括缠绕在第一层中的薄膜线圈; 第一MR元件设置在第二层中，并且检测由流过薄膜线圈的信号电流产生的感应磁场; 并且轭设置成靠近第一MR元件，并且包括软磁材料。 第一MR元件被布置在与层叠方向上的薄膜线圈的线性区域对应的位置。 磁轭以将第一MR元件插入第二层的方式设置在薄膜线圈的内侧转弯侧和外侧转动侧。 因此，抑制感应磁场强度的降低，感应磁场的强度分布变得更平坦。

公开(公告)号：US07956609B2

公开(公告)日：2011-06-07

申请号：US12053219

申请日：2008-03-21

申请人： Susumu Haratani ,  Hitoshi Yamaguchi ,  Naoki Ohta

发明人： Susumu Haratani ,  Hitoshi Yamaguchi ,  Naoki Ohta

IPC分类号： G01R33/02 ,  G01B7/30 ,  G01B7/14

CPC分类号： G01R33/093 ,  B82Y25/00

摘要： The magnetic sensor comprises a spin-valve GMR including a free layer having an elongated form as seen in a laminating direction and a permanent magnet layer having an elongated form as seen in the laminating direction. The permanent magnet layer is arranged in parallel with the free layer.

摘要翻译： 磁传感器包括自旋阀GMR，其包括在层叠方向上具有细长形状的自由层和在层叠方向上看到的具有细长形状的永久磁铁层。 永磁体层与自由层平行设置。

公开(公告)号：US20090121819A1

公开(公告)日：2009-05-14

申请号：US12289384

申请日：2008-10-27

申请人： Susumu Haratani ,  Hitoshi Yamaguchi

发明人： Susumu Haratani ,  Hitoshi Yamaguchi

IPC分类号： H01F17/02

CPC分类号： G01R33/09 ,  G01R33/091 ,  H01F5/003 ,  H01F38/14

摘要： A magnetic coupler having higher response is provided. The magnetic coupler includes a thin film coil wound in a first layer; a first MR element being disposed in a second layer, and detecting an induced magnetic field generated by a signal current flowing through the thin film coil; and yokes being disposed close to the first MR element, and including a soft magnetic material. The first MR element is disposed in a position corresponding to a linear region of the thin film coil in a stacking direction. The yokes are disposed at both of an inner turn side and an outer turn side of the thin film coil in a manner of interposing the first MR element in the second layer. Thus, reduction in intensity of the induced magnetic field is suppressed, and intensity distribution of the induced magnetic field becomes flatter.

摘要翻译： 提供了具有较高响应的磁耦合器。 磁耦合器包括缠绕在第一层中的薄膜线圈; 第一MR元件设置在第二层中，并且检测由流过薄膜线圈的信号电流产生的感应磁场; 并且轭设置成靠近第一MR元件，并且包括软磁材料。 第一MR元件被布置在与层叠方向上的薄膜线圈的线性区域对应的位置。 磁轭以将第一MR元件插入第二层的方式设置在薄膜线圈的内侧转弯侧和外侧转动侧。 因此，抑制感应磁场强度的降低，感应磁场的强度分布变得更平坦。

公开(公告)号：US07928470B2

公开(公告)日：2011-04-19

申请号：US11598646

申请日：2006-11-14

申请人： Hitoshi Yamaguchi ,  Jun Sakakibara

发明人： Hitoshi Yamaguchi ,  Jun Sakakibara

IPC分类号： H01L29/66

CPC分类号： H01L29/66712 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/66734 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813

摘要： A semiconductor device having a super junction MOS transistor includes: a semiconductor substrate; a first semiconductor layer on the substrate; a second semiconductor layer on the first semiconductor layer; a channel forming region on a first surface portion of the second semiconductor layer; a source region on a first surface portion of the channel forming region; a source contact region on a second surface portion of the channel forming region; a gate electrode on a third surface portion of the channel forming region; a source electrode on the source region and the source contact region; a drain electrode on a backside of the substrate; and an anode electrode on a second surface portion of the second semiconductor layer. The anode electrode provides a Schottky barrier diode.

摘要翻译： 具有超结MOS晶体管的半导体器件包括：半导体衬底; 在所述基板上的第一半导体层; 在所述第一半导体层上的第二半导体层; 在第二半导体层的第一表面部分上的沟道形成区; 在所述沟道形成区域的第一表面部分上的源极区域; 在所述沟道形成区域的第二表面部分上的源极接触区域; 在沟道形成区域的第三表面部分上的栅电极; 源极区域和源极接触区域上的源极电极; 位于衬底背面的漏电极; 以及在所述第二半导体层的第二表面部分上的阳极电极。 阳极电极提供肖特基势垒二极管。

公开(公告)号：US07858475B2

公开(公告)日：2010-12-28

申请号：US12614632

申请日：2009-11-09

申请人： Hitoshi Yamaguchi ,  Takeshi Miyajima ,  Nozomu Akagi

发明人： Hitoshi Yamaguchi ,  Takeshi Miyajima ,  Nozomu Akagi

IPC分类号： H01L21/8234

CPC分类号： H01L29/7813 ,  H01L21/823814 ,  H01L21/823885 ,  H01L29/0634 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/1095 ,  H01L29/66734 ,  H01L29/7803 ,  H01L29/7811 ,  Y10S438/977

摘要： A manufacturing method of a semiconductor device includes: forming multiple trenches on a semiconductor substrate; forming a second conductive type semiconductor film in each trench to provide a first column with the substrate between two trenches and a second column with the second conductive type semiconductor film in the trench, the first and second columns alternately repeated along with a predetermined direction; thinning a second side of the substrate; and increasing an impurity concentration in a thinned second side so that a first conductive type layer is provided. The impurity concentration of the first conductive type layer is higher than the first column. The first column provides a drift layer so that a vertical type first-conductive-type channel transistor is formed.

摘要翻译： 半导体器件的制造方法包括：在半导体衬底上形成多个沟槽; 在每个沟槽中形成第二导电类型的半导体膜，以提供具有在两个沟槽之间的衬底的第一柱和在沟槽中的第二导电型半导体膜的第二柱，第一和第二列与预定方向交替地重复; 减薄基板的第二面; 并增加稀薄第二侧的杂质浓度，从而提供第一导电类型层。 第一导电型层的杂质浓度比第一列高。 第一列提供漂移层，从而形成垂直型第一导电型沟道晶体管。

公开(公告)号：US07635622B2

公开(公告)日：2009-12-22

申请号：US11889075

申请日：2007-08-09

申请人： Hitoshi Yamaguchi ,  Takeshi Miyajima

发明人： Hitoshi Yamaguchi ,  Takeshi Miyajima

IPC分类号： H01L21/8238

CPC分类号： H01L29/7813 ,  H01L21/823814 ,  H01L21/823885 ,  H01L29/0634 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/1095 ,  H01L29/66734 ,  H01L29/7803 ,  H01L29/7811 ,  Y10S438/977

摘要： A manufacturing method of a semiconductor device includes: forming multiple trenches on a semiconductor substrate; forming a second conductive type semiconductor film in each trench to provide a first column with the substrate between two trenches and a second column with the second conductive type semiconductor film in the trench, the first and second columns alternately repeated along with a predetermined direction; thinning a second side of the substrate; and increasing an impurity concentration in a thinned second side so that a first conductive type layer is provided. The impurity concentration of the first conductive type layer is higher than the first column. The first column provides a drift layer so that a vertical type first-conductive-type channel transistor is formed.

摘要翻译： 半导体器件的制造方法包括：在半导体衬底上形成多个沟槽; 在每个沟槽中形成第二导电类型的半导体膜，以提供具有在两个沟槽之间的衬底的第一柱和在沟槽中的第二导电型半导体膜的第二柱，第一和第二列与预定方向交替地重复; 减薄基板的第二面; 并增加稀薄第二侧的杂质浓度，从而提供第一导电类型层。 第一导电型层的杂质浓度比第一列高。 第一列提供漂移层，从而形成垂直型第一导电型沟道晶体管。

公开(公告)号：US07601603B2

公开(公告)日：2009-10-13

申请号：US11094782

申请日：2005-03-31

申请人： Shoichi Yamauchi ,  Hitoshi Yamaguchi ,  Tomoatsu Makino ,  Syouji Nogami ,  Tomonori Yamaoka

发明人： Shoichi Yamauchi ,  Hitoshi Yamaguchi ,  Tomoatsu Makino ,  Syouji Nogami ,  Tomonori Yamaoka

IPC分类号： H01L21/20

CPC分类号： H01L29/7813 ,  H01L21/823487 ,  H01L29/0634 ,  H01L29/7811

摘要： A method for manufacturing a semiconductor device includes the steps of: forming a trench in a semiconductor substrate; and forming an epitaxial film on the substrate including a sidewall and a bottom of the trench so that the epitaxial film is filled in the trench. The step of forming the epitaxial film includes a final step before the trench is filled with the epitaxial film. The final step has a forming condition of the epitaxial film in such a manner that the epitaxial film to be formed on the sidewall of the trench has a growth rate at an opening of the trench smaller than a growth rate at a position of the trench, which is deeper than the opening of the trench.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在半导体衬底中形成沟槽; 以及在包括沟槽的侧壁和底部的衬底上形成外延膜，使得外延膜填充在沟槽中。 形成外延膜的步骤包括在沟槽被外延膜填充之前的最后步骤。 最终步骤具有外延膜的形成条件，使得形成在沟槽的侧壁上的外延膜在沟槽的开口处的生长速率小于沟槽位置处的生长速率， 其比沟槽的开口更深。