Circuit configuration for gentle shutoff of an MOS semiconductor
component in the event of excess current
    1.
    发明授权
    Circuit configuration for gentle shutoff of an MOS semiconductor component in the event of excess current 失效
    电流配置,用于在过电流情况下轻松切断MOS半导体元件

    公开(公告)号:US5526216A

    公开(公告)日:1996-06-11

    申请号:US304084

    申请日:1994-09-09

    摘要: In a circuit configuration for the shutoff of a semiconductor component in the event of excess current, the semiconductor component has gate and cathode terminals and is controlled by the field effect. A controllable switch is connected between the gate and cathode terminals and is made conducting by a control signal. A device controls the controllable switch to a range of high on-state DC resistance when there is excess current and a shutoff signal is simultaneously present.

    摘要翻译: 在用于在过电流的情况下关闭半导体元件的电路配置中,半导体元件具有栅极和阴极端子并由场效应控制。 可控开关连接在栅极和阴极端子之间,并通过控制信号导通。 当存在过电流并且同时存在截止信号时,器件将可控开关控制到高导通状态直流电阻的范围。

    Dense shaped articles of polycrystalline .alpha.-silicon carbide and
process for the manufacture thereof by hot-pressing
    2.
    发明授权
    Dense shaped articles of polycrystalline .alpha.-silicon carbide and process for the manufacture thereof by hot-pressing 失效
    多晶α-碳化硅碳化物的致密成形制品及通过热压制造的方法

    公开(公告)号:US4467043A

    公开(公告)日:1984-08-21

    申请号:US507932

    申请日:1983-06-23

    CPC分类号: C04B35/575

    摘要: The invention relates to dense shaped articles of polycrystalline .alpha.-silicon carbide containing from 0.1 to 0.4%, by weight, of aluminum and optionally, a small amount of nitrogen and/or phosphorus, having a homogeneous virtually single-phase microstructure. The additional constituents are substantially in the form of a solid solution in the .alpha.-SiC lattice. The shaped articles are distinguished by flexural strength of at least 600 N/mm.sup.2 up to 1450.degree. C. and low subcritical crack propagation under mechanical stress. The fracture mechanism is trans granular up to at least 1450.degree. C. The shaped articles are manufactured by simultaneously shaping and hot pressing pulverulent .alpha.-silicon carbide containing a small amount of an aluminum-containing additive, such as aluminum powder, aluminum nitride and/or aluminum phosphide, at temperatures between 1850.degree. C. and 2300.degree. C. under a pressure of at least 100 bar (10 MPa).

    摘要翻译: 本发明涉及包含0.1至0.4重量%的铝和任选的少量氮和/或磷的多晶α-碳化硅的致密成型制品,其具有均匀的实质上单相微观结构。 附加组分基本上是α-Si晶格中固溶体的形式。 成形制品的特征在于至少600N / mm 2至1450℃的弯曲强度和在机械应力下的低亚临界裂纹扩展。 断裂机理是反式颗粒至多至1450℃。成型制品通过同时成型和热压含有少量含铝添加剂的粉末状α-碳化硅,如铝粉,氮化铝和/ 或磷化铝,在至少100巴(10MPa)的压力下,在1850℃至2300℃的温度下进行。

    Refractory, electrically conductive, mixed materials containing boron
nitride and process for their manufacture
    3.
    发明授权
    Refractory, electrically conductive, mixed materials containing boron nitride and process for their manufacture 失效
    含氮化硼的耐火导电混合材料及其制造方法

    公开(公告)号:US4528120A

    公开(公告)日:1985-07-09

    申请号:US601986

    申请日:1984-04-19

    摘要: The invention is refractory, electrically conductive, mixed materials based on hexagonal boron nitride and at least one electrically conductive component such as titanium boride and zirconium boride, and having a density of at least about 95% of the theoretical density and nondirection-dependent properties, which have been manufactured from powder mixtures that are practically free of oxygen and metal and comprisefrom about 10 to 60% by weight of boron nitride,from about 0 to 60% by weight of aluminum nitride and/or silicon nitride, andfrom about 30 to 70% by weight of an electrically conductive component,without the concomitant use of sintering aids by means of isostatic hot pressing in a vacuum-tight casing at temperatures of from about 1400.degree. to 1700.degree. C. and under a pressure of from about 100 to 300 MPa. The powder mixtures are pre-densified to form green bodies in block form and are then introduced into casings or coated with a material forming a vacuum-tight casing. The pre-densified green bodies in the vacuum-tight casing are then subjected to the isostatic hot-pressing process in a high-pressure autoclave, using an inert gas such as argon, as pressure-transmission medium. The article formed from the mixed materials are used to manufacture evaporation boats for the vacuum evaporation of metals.

    摘要翻译: 本发明是基于六方氮化硼和至少一种导电组分如硼化钛和硼化锆的耐火材料,导电的混合材料,并且具有至少约95%的理论密度和非方向依赖性质的密度, 其由实际上不含氧和金属的粉末混合物制成,并且包含约10至60重量%的氮化硼,约0至60重量%的氮化铝和/或氮化硅,以及约30 至70重量%的导电组分,而不伴随使用烧结助剂,通过在真空密封的壳体中通过在约1400℃至1700℃的温度和约100℃的压力下的等静压热压 至300MPa。 将粉末混合物预先致密化以形成块状的生坯,然后将其引入壳体中或涂覆形成真空密封套管的材料。 然后将真空密封的外壳中的预致密生坯在高压高压釜中使用惰性气体如氩气进行等静压热压作为压力传递介质。 由混合材料制成的制品用于制造用于金属真空蒸发的蒸发舟。

    Dense shaped articles of polycrystalline .beta.-silicon carbide and
process for the manufacture thereof by hot-pressing
    4.
    发明授权
    Dense shaped articles of polycrystalline .beta.-silicon carbide and process for the manufacture thereof by hot-pressing 失效
    多晶β-碳化硅碳化物的密集制品及其制造方法

    公开(公告)号:US4326039A

    公开(公告)日:1982-04-20

    申请号:US163214

    申请日:1980-06-25

    CPC分类号: C04B35/575

    摘要: The invention relates to dense shaped articles of polycrystalline .beta.-silicon carbide containing small amounts of aluminum and optionally, nitrogen and/or phosphorus, having a virtually single-phase microstructure since the additional constituents are substantially in the form of a solid solution in the .beta.-SiC lattice. The shaped articles are characterized by high temperature flexural strengths of at least 600 N/mm.sup.2 at temperatures up to 1450.degree. C. The fracture mechanism is transgranular up to at least 1450.degree. C. The shaped articles are manufactured by hot-pressing and simultaneously shaping pulverulent .beta.-silicon carbide with small amounts of an aluminum-containing additive, such as aluminum powder or aluminum nitride and/or aluminum phosphide, at temperatures between 1750.degree. C. and 2200.degree. C. under a pressure of at least 100 bar (10 MPa).

    摘要翻译: 本发明涉及含有少量铝和任选的氮和/或磷的多晶β-碳化硅的致密成形制品,其具有实际上的单相微观结构,因为附加组分基本上是β型固体溶液的形式 -SiC格。 成型制品的特征在于在高达1450℃的温度下具有至少600N / mm 2的高温弯曲强度。断裂机制是透镜至多至1450℃。成形制品通过热压并同时成形 在低于100巴的压力(10巴)的温度下,在1750℃至2200℃的温度下,使用少量含铝添加剂,例如铝粉或氮化铝和/或磷化铝的粉末状β-硅碳化物 MPa)。

    Ceramic bonded neutron absorber plates of boron carbide and free carbon
    5.
    发明授权
    Ceramic bonded neutron absorber plates of boron carbide and free carbon 失效
    陶瓷粘结中子吸收板碳化硼和游离碳

    公开(公告)号:US4684480A

    公开(公告)日:1987-08-04

    申请号:US670760

    申请日:1984-11-13

    摘要: The invention is a ceramically-bonded large-area neutron absorber articles of low density having a space filling ofabout 40 to 60% by volume boron carbide+silicon carbide in a B.sub.4 C:SiC ratio of about 9:1 to 1:9 andabout 10 to 20% by volume of free carbon, the remainder pores.They have a density of from about 1.5 to 2.2 g/cm.sup.3 and a flexural strength of from about 20 to 50 N/mm.sup.2 at room temperature measured according to the 3-point method, which strength after the corrosion test of immersion for about 3000 hours in boiling water, drops by less than about 40% of the initial value. Graphite powder may optionally be included with a pulverulent organic resin binder and a wetting agent, molding the mixture under pressure at about room temperature, curing the resin binder at temperatures of up to about 180.degree. C. and then coking the molded plates in the absence of air at temperatures of up to about 1000.degree. C. under a controlled temperature program.

    摘要翻译: 本发明是一种低密度陶瓷结合的大面积中子吸收体制品,具有约40至60体积%的碳化硼+碳化硅的空间填充体,其中B4C:SiC比为约9:1至1:9,约为 10〜20体积%的游离碳,其余为毛孔。 它们的密度约为1.5-2.2g / cm3,室温下的弯曲强度为约20至50N / mm 2,根据3点法测定,浸渍腐蚀试验后的强度约为3000小时 在沸水中下降小于初始值的约40%。 可以任选地在粉状有机树脂粘合剂和润湿剂中包含石墨粉末,在约室温下在压力下成型混合物,在高达约180℃的温度下固化树脂粘合剂,然后在不存在的情况下将模制板焦化 的空气在高达约1000℃的温度下控制温度程序。

    Process for the manufacture of substantially pore-free shaped
polycrystalline articles by isostatic hot-pressing in glass casings
    7.
    发明授权
    Process for the manufacture of substantially pore-free shaped polycrystalline articles by isostatic hot-pressing in glass casings 失效
    用于通过玻璃外壳中的等静压热压制造基本上无孔的多晶制品的方法

    公开(公告)号:US4381931A

    公开(公告)日:1983-05-03

    申请号:US304948

    申请日:1981-09-23

    摘要: The invention relates to a process for the manufacture of substantially pore-free shaped articles of polycrystalline material such as aluminium oxide, titanium boride, silicon nitride or silicon carbide, in which pulverulent materials or preformed articles having pores open towards the surface, in a vacuum-tight sealed glass casing that has a viscosity of less than 10.sup.6 Pas at the pressing temperature employed, are isostatically hot-pressed in a high-pressure autoclave using an inert gas as pressure-transfer medium. By being embedded in a flowable pile or by having a layer applied to them in the form of a suspension, the glass-encased powders or articles are brought into contact with a heat-resistant pulverulent material that, upon softening of the glass casing, penetrates into the surface of the glass of reacts with it, with the result that the glass casing is reinforced from the outside at the pressing temperature. As pulverulent materials, there may be used titanium boride, graphite, SiC or boron nitride, which do not react with the glass casing, or glass powder or silica, which react with the glass casing to form a glass melt of at least the same viscosity as, or of a higher viscosity than, the glass casing.

    摘要翻译: 本发明涉及一种用于制造基本上无孔的成形制品的多晶材料,例如氧化铝,硼化钛,氮化硅或碳化硅,其中粉末材料或具有孔朝向表面开口的预制制品在真空中 在所使用的压制温度下粘度小于106Pa·s的密封玻璃外壳在使用惰性气体作为压力传递介质的高压高压釜中进行等静压热压。 通过嵌入可流动的桩中或通过以悬浮液的形式施加到其上的层,使玻璃包裹的粉末或制品与耐热粉末材料接触,所述耐热粉末材料在玻璃套管的软化时穿透 玻璃表面与玻璃反应,结果玻璃外壳在压制温度下从外部增强。 作为粉状材料,可以使用不与玻璃外壳反应的硼化钛,石墨,SiC或氮化硼,或与玻璃外壳反应的玻璃粉末或二氧化硅,以形成至少相同粘度的玻璃熔体 或者比玻璃外壳高的粘度。

    Dense shaped articles consisting of polycrystalline hexagonal boron
nitride and process for their manufacture by isostatic hot-pressing
    8.
    发明授权
    Dense shaped articles consisting of polycrystalline hexagonal boron nitride and process for their manufacture by isostatic hot-pressing 失效
    由多晶六方氮化硼组成的致密成型制品及其通过等静压热压制造的方法

    公开(公告)号:US4634640A

    公开(公告)日:1987-01-06

    申请号:US646627

    申请日:1984-08-31

    CPC分类号: C04B35/6455 C04B35/583

    摘要: The invention is a shaped article of boron nitride having a density of at least 95% of the theoretical density which consists of polycrystalline hexagonal boron nitride in the form of a homogeneous isotropic microstructure and which has been manufactured from pure boron nitride powder without the concomitant use of sintering aids by isostatic hot-pressing in a vacuum-tight casing at temperatures of from about 1200.degree. to 1500.degree. C. under a pressure of from about 50 to 300 MPa. Boron nitride powders having a free boric oxide content of not more than 1.0% by weight and having a specific surface area of from 5 to 30 m.sup.2 /g are used as starting material. The powders either are filled into prefabricated casings consisting of steel or glass and densified by vibration or are preshaped to form green bodies having pores open to the surface and then placed in prefabricated casings or coated with a material which forms a vacuum-tight casing. The powders or the preshaped green bodies in the vacuum-tight casings are then subjected to an isostatic hot-pressing process in a high-pressure zone using an inert gas such as argon or nitrogen, as the pressure-transfer medium.

    摘要翻译: 本发明是氮化硼的成型制品,其密度至少为理论密度的95%,由均匀的各向同性微观结构形式的多晶六方氮化硼组成,并且由纯氮化硼粉末制造而不伴随使用 的烧结助剂通过在约1200至1500℃的温度下在约50至300MPa的压力下在真空密封的壳体中等静压热压。 使用游离氧化硼含量为1.0重量%以下,比表面积为5〜30m 2 / g的氮化硼粉末作为起始原料。 将粉末填充到由钢或玻璃组成的预制外壳中并通过振动而致密化,或者被预成型形成具有通向表面的孔的生坯,然后放置在预制外壳中或涂覆有形成真空密封外壳的材料。 作为压力传递介质,将真空密封的壳体中的粉末或预成形的生坯在高压区域中进行等静压热压工艺,使用惰性气体如氩气或氮气进行。

    Shaped polycrystalline silicon carbide articles and isostatic
hot-pressing process
    9.
    发明授权
    Shaped polycrystalline silicon carbide articles and isostatic hot-pressing process 失效
    成型多晶碳化硅制品和等静压热压工艺

    公开(公告)号:US4564601A

    公开(公告)日:1986-01-14

    申请号:US646022

    申请日:1984-08-29

    CPC分类号: C04B35/575 C04B35/6455

    摘要: The invention is substantially pore-free shaped articles which consist essentially of polycrystalline .alpha.- or .beta.-silicon carbide in the form of a single-phase homogeneous microstructure having grain sizes not exceeding 8 .mu.m, and which are manufactured from SiC powder, without the concomitant use of sintering aides, by isostatic hot-pressing in a vacuum-tight casing at temperatures of from about 1900.degree. C. to 2300.degree. C. and at pressures of from about 100 to 400 MPa. The SiC starting materials have .alpha.- and/or .beta.-SiC powders having a total content of metallic impurities not exceeding 0.1% by weight and a particle size of 4 .mu.m and finer.

    摘要翻译: 本发明是基本上无孔的成形制品,其基本上由具有不超过8μm的晶粒尺寸的单相均匀组织形式的多晶α-或β-碳化硅组成,并且由SiC粉末制成,没有 伴随使用烧结助剂,通过在真空密封的套管中通过在约1900℃至2300℃的温度和约100至400MPa的压力下等静压热压。 SiC原料具有金属杂质的总含量不超过0.1重量%且粒径为4μm的α和/或β-SiC粉末,并且更细。

    Substantially pore-free sintered polycrystalline articles of
.alpha.-silicon carbide, boron carbide and free carbon and process for
their manufacture
    10.
    发明授权
    Substantially pore-free sintered polycrystalline articles of .alpha.-silicon carbide, boron carbide and free carbon and process for their manufacture 失效
    基本上无孔的碳化硅,碳化硼和游离碳的烧结多晶制品及其制造方法

    公开(公告)号:US4524138A

    公开(公告)日:1985-06-18

    申请号:US491662

    申请日:1983-05-05

    摘要: The invention provides substantially pore-free sintered polycrystalline articles comprising .alpha.-silicon carbide, boron carbide and free carbon, the quantitative proportions of which, in percent by weight, are defined by the trapezoidal area having, in the ternary system B/Si/C of FIG. 1 the corner pointsa=89.0% B.sub.4 C, 9.9% .alpha.-Sic, 1.1% Cb=9.9% B.sub.4 C, 89.0% .alpha.-SiC, 1.1% Cc=9.0% B.sub.4 C, 81.0% .alpha.-Sic, 10.0% Cd=81.0% B.sub.4 C, 9.0% .alpha.-SiC, 10.0% CThe articles have a density of at least 99% of the theoretical density, an average structural grain size of less than 20 .mu.m and a 4-point flexural strength of at least 400 N/mm.sup.2. They are manufactured from fine-grained mixtures of .alpha.-silicon carbide, boron carbide, carbon and/or material that can be coked to form carbon, in a two-stage sintering process. In the first stage, green bodies preshaped from the powder are subjected to pressureless sintering to a density of at least 95% TD at from 1950.degree. to 2150.degree. C. In the second stage, the sintered articles are subjected to a post-densification to a density of at least 99% TD, by isostatic hot pressing, without encapsulating, at from 1850.degree. to 2150.degree. C. in a high-pressure autoclave under a gas pressure of at least 10 MPa.

    摘要翻译: 本发明提供了包含α-碳化硅,碳化硼和游离碳的基本上无孔的烧结多晶制品,其定量比例以重量百分比由梯度面积定义,其三元体系B / Si / C 的图 1的角点a = 89.0%B 4 C,9.9%α-Si,1.1%C b = 9.9%B 4 C,89.0%α-SiC,1.1%C c = 9.0%B 4 C,81.0%α-Si,10.0%C d = 81.0%B4C,9.0%α-SiC,10.0%C制品的密度至少为理论密度的99%,平均结构晶粒尺寸小于20μm,4点弯曲强度至少为 400 N / mm2。 它们由两步烧结工艺中的α-碳化硅,碳化硼,碳和/或可以焦化以形成碳的材料的细粒混合物制成。 在第一阶段,将从粉末预成型的生坯在1950〜2150℃下进行无压烧结至至少95%TD的密度。在第二阶段,对烧结制品进行后致密化 在高压高压釜中,在至少10MPa的气体压力下,通过等静压热压而不包封在1850℃至2150℃下的至少99%TD的密度。