Politeness zones for wireless communication devices
    1.
    发明授权
    Politeness zones for wireless communication devices 有权
    无线通信设备的礼节区

    公开(公告)号:US06898445B2

    公开(公告)日:2005-05-24

    申请号:US09738943

    申请日:2000-12-13

    摘要: A communication system includes a politeness zone (PZ); a wireless communication device configured to receive incoming communications over a first communication channel and politeness requests over a second communication channel, the communication device comprising an alerting mechanism configured to indicate receipt of an incoming communication over the first communication channel, the alerting mechanism operable in a politeness mode and a non-politeness mode, the politeness requests indicating that operation of the alerting mechanism should be set to politeness mode, wherein, upon receipt of a politeness request over the second communication channel, the device is configured to accept the politeness request and set operation of the alerting mechanism to politeness mode, or to reject the politeness request and leave operation of the alerting mechanism in its present mode of operation; and a politeness zone transmitter (PZT) configured to send politeness requests to the communication device over the second communication channel when the communication device is proximate the PZ.

    摘要翻译: 通信系统包括礼貌区(PZ); 无线通信设备,被配置为通过第一通信信道接收进入的通信和通过第二通信信道的礼貌请求,所述通信设备包括警报机制,所述警报机制被配置为指示通过所述第一通信信道接收到进入通信,所述警报机制可在 礼貌模式和非礼貌模式,礼貌请求指示警报机制的操作应设置为礼貌模式,其中,在通过第二通信信道接收到礼貌请求后,该设备被配置为接受礼貌请求, 将告警机制的操作设置为礼貌模式,否则拒绝礼貌请求,并将告警机制的操作置于当前的操作模式; 以及配置为当通信设备靠近PZ时通过第二通信信道向通信设备发送礼貌请求的礼貌区域发送器(PZT)。

    Circuit configuration for gentle shutoff of an MOS semiconductor
component in the event of excess current
    3.
    发明授权
    Circuit configuration for gentle shutoff of an MOS semiconductor component in the event of excess current 失效
    电流配置,用于在过电流情况下轻松切断MOS半导体元件

    公开(公告)号:US5526216A

    公开(公告)日:1996-06-11

    申请号:US304084

    申请日:1994-09-09

    摘要: In a circuit configuration for the shutoff of a semiconductor component in the event of excess current, the semiconductor component has gate and cathode terminals and is controlled by the field effect. A controllable switch is connected between the gate and cathode terminals and is made conducting by a control signal. A device controls the controllable switch to a range of high on-state DC resistance when there is excess current and a shutoff signal is simultaneously present.

    摘要翻译: 在用于在过电流的情况下关闭半导体元件的电路配置中,半导体元件具有栅极和阴极端子并由场效应控制。 可控开关连接在栅极和阴极端子之间,并通过控制信号导通。 当存在过电流并且同时存在截止信号时,器件将可控开关控制到高导通状态直流电阻的范围。