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公开(公告)号：US11434584B2
公开(公告)日：2022-09-06
申请号：US17106459
申请日：2020-11-30
申请人： T.O.S Co., Ltd.
发明人： Bum Ho Choi , Seung Soo Lee , Yeong Geun Jo , Yong Sik Kim
摘要： Disclosed herein is an apparatus for growing a single crystal metal-oxide epi wafer, including a reaction chamber having an internal space, a substrate mounting unit disposed in the internal space and allowing a substrate to be mounted thereon, a metal-oxide treating unit treating a metal-oxide to supply metal ions and oxygen ions generated from the metal-oxide to the substrate, and an arsenic supply unit installed to face the substrate and supplying arsenic ions to the substrate, wherein the metal-oxide treating unit includes a mount disposed to face the substrate in the internal space and allowing a zinc oxide plate which is the metal-oxide to be installed thereon, and an electron beam irradiator irradiating the zinc oxide plate with an electron beam in a direct manner to cause zinc ions and oxygen ions evaporated from the zinc oxide plate to move toward the substrate.
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公开(公告)号：US12000061B2
公开(公告)日：2024-06-04
申请号：US17106471
申请日：2020-11-30
申请人： T.O.S Co., Ltd.
发明人： Bum Ho Choi , Seung Soo Lee , Yeong Geun Jo , Yong Sik Kim
CPC分类号： C30B23/066 , C23C14/086 , C23C14/30 , C30B23/08 , C30B29/16 , C30B35/00 , H01L21/02554 , H01L21/02631
摘要： Disclosed herein is a separate chamber type epi-growth apparatus including a reaction chamber having a growth space, a substrate mounting unit disposed in the growth space and allowing a substrate to be mounted thereon, a metal oxide treating unit treating a metal oxide in a space independent from the growth space so that metal ions and oxygen ions generated from the metal oxide are supplied to the substrate, an arsenic supply unit installed to face the substrate and supplying arsenic ions to the substrate, an oxygen radical supply unit installed to face the substrate, dissociating oxygen molecules in a gaseous state, and supplying oxygen radicals to the substrate, and a vacuum control unit independently controlling a vacuum state of the reaction chamber and the metal oxide treating unit.
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公开(公告)号：US11961720B2
公开(公告)日：2024-04-16
申请号：US17499034
申请日：2021-10-12
申请人： T.O.S Co., Ltd.
发明人： Yong Kyu Kim , Bum Ho Choi , Yong Sik Kim , Kwang Ki Kang , Hong Jong Jung , Seok Ho Lee , Seung Soo Lee
CPC分类号： H01J37/32944 , H01J37/3211 , H05H1/0081
摘要： Disclosed herein is a multi-channel device for detecting plasma at an ultra-fast speed, including: a first antenna module connected to a first output terminal in contact with a substrate on a chuck of a process chamber and extending to ground, and receiving a first leakage current leaking through the substrate to increase reception sensitivity of the leakage current; a first current detection module detecting the first leakage current; a current measurement module receiving the first leakage current output from the first current detection module, and extracting the received first leakage current for each predetermined period to generate a first leakage current measurement information; and a control module comparing the first leakage current measurement information with a reference value to generate first arcing occurrence information.
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4.发明授权公开(公告)号：US11692260B2
公开(公告)日：2023-07-04
申请号：US17105743
申请日：2020-11-27
申请人： T.O.S CO., Ltd.
发明人： Bum Ho Choi , Seung Soo Lee , Yeong Geun Jo , Yong Sik Kim
摘要： A metal-oxide electron-beam evaporation source including a variable temperature control device according to the present invention includes: a crucible configured to store a deposition material which is formed of a metal oxide and over which an electron beam is directly scanned; N heating units provided in an outer portion of the crucible, dividing the crucible into N regions, and provided for N regions, respectively; and a control unit configured to control the N heating units so that a temperature of an upper region of the crucible is maintained to be higher than that of a lower region of the crucible to reduce a temperature difference between a region over which the electron beam is scanned and a region over which the electron beam is not scanned.
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