-
公开(公告)号：US07948298B2
公开(公告)日：2011-05-24
申请号：US12851175
申请日：2010-08-05
申请人： Tadashi Kameyama , Takayasu Ito , Seiichi Saito , Koji Sato
发明人： Tadashi Kameyama , Takayasu Ito , Seiichi Saito , Koji Sato
IPC分类号： H01L35/00
摘要： The semiconductor integrated circuit is provided, in which an external temperature control or temperature monitoring is possible, with little influence by the noise of a system board which mounts the semiconductor integrated circuit. The semiconductor integrated circuit includes the temperature detection circuit which detects the chip temperature, and the functional module which flows a large operating current. An external terminal which supplies operating voltage, and an external terminal which supplies ground voltage are coupled to the functional module. The temperature detection circuit generates a temperature detection signal and a reference signal. The reference signal and the temperature detection signal are led out to the exterior of the semiconductor integrated circuit via a first external output terminal and a second external output terminal, respectively, and are supplied to an external temperature control/monitoring circuit which has a circuitry type of a differential amplifier circuit.
摘要翻译： 提供了半导体集成电路，其中可以进行外部温度控制或温度监视，几乎不受安装半导体集成电路的系统板的噪声的影响。 半导体集成电路包括检测芯片温度的温度检测电路和流过大的工作电流的功能模块。 提供工作电压的外部端子和提供接地电压的外部端子耦合到功能模块。 温度检测电路产生温度检测信号和参考信号。 参考信号和温度检测信号分别经由第一外部输出端子和第二外部输出端子被引出到半导体集成电路的外部，并且被提供给具有电路类型的外部温度控制/监视电路 的差分放大电路。
-
公开(公告)号：US20110204957A1
公开(公告)日：2011-08-25
申请号：US13102149
申请日：2011-05-06
申请人： TADASHI KAMEYAMA , Takayasu Ito , Seiichi Saito , Koji Sato
发明人： TADASHI KAMEYAMA , Takayasu Ito , Seiichi Saito , Koji Sato
IPC分类号： H01L35/00
摘要： The semiconductor integrated circuit is provided, in which an external temperature control or temperature monitoring is possible, with little influence by the noise of a system board which mounts the semiconductor integrated circuit. The semiconductor integrated circuit includes the temperature detection circuit which detects the chip temperature, and the functional module which flows a large operating current. An external terminal which supplies operating voltage, and an external terminal which supplies ground voltage are coupled to the functional module. The temperature detection circuit generates a temperature detection signal and a reference signal. The reference signal and the temperature detection signal are led out to the exterior of the semiconductor integrated circuit via a first external output terminal and a second external output terminal, respectively, and are supplied to an external temperature control/monitoring circuit which has a circuitry type of a differential amplifier circuit.
摘要翻译： 提供了半导体集成电路，其中可以进行外部温度控制或温度监视，几乎不受安装半导体集成电路的系统板的噪声的影响。 半导体集成电路包括检测芯片温度的温度检测电路和流过大的工作电流的功能模块。 提供工作电压的外部端子和提供接地电压的外部端子耦合到功能模块。 温度检测电路产生温度检测信号和参考信号。 参考信号和温度检测信号分别经由第一外部输出端子和第二外部输出端子被引出到半导体集成电路的外部，并且被提供给具有电路类型的外部温度控制/监视电路 的差分放大电路。
-
公开(公告)号：US20100301924A1
公开(公告)日：2010-12-02
申请号：US12851175
申请日：2010-08-05
申请人： TADASHI KAMEYAMA , Takayasu Ito , Seiichi Saito , Koji Sato
发明人： TADASHI KAMEYAMA , Takayasu Ito , Seiichi Saito , Koji Sato
IPC分类号： H01L35/00
摘要： The semiconductor integrated circuit is provided, in which an external temperature control or temperature monitoring is possible, with little influence by the noise of a system board which mounts the semiconductor integrated circuit. The semiconductor integrated circuit includes the temperature detection circuit which detects the chip temperature, and the functional module which flows a large operating current. An external terminal which supplies operating voltage, and an external terminal which supplies ground voltage are coupled to the functional module. The temperature detection circuit generates a temperature detection signal and a reference signal. The reference signal and the temperature detection signal are led out to the exterior of the semiconductor integrated circuit via a first external output terminal and a second external output terminal, respectively, and are supplied to an external temperature control/monitoring circuit which has a circuitry type of a differential amplifier circuit.
摘要翻译： 提供了半导体集成电路，其中可以进行外部温度控制或温度监视，几乎不受安装半导体集成电路的系统板的噪声的影响。 半导体集成电路包括检测芯片温度的温度检测电路和流过大的工作电流的功能模块。 提供工作电压的外部端子和提供接地电压的外部端子耦合到功能模块。 温度检测电路产生温度检测信号和参考信号。 参考信号和温度检测信号分别经由第一外部输出端子和第二外部输出端子被引出到半导体集成电路的外部，并且被提供给具有电路类型的外部温度控制/监视电路 的差分放大电路。
-
公开(公告)号：US07782119B2
公开(公告)日：2010-08-24
申请号：US12422854
申请日：2009-04-13
申请人： Tadashi Kameyama , Takayasu Ito , Seiichi Saito , Koji Sato
发明人： Tadashi Kameyama , Takayasu Ito , Seiichi Saito , Koji Sato
IPC分类号： H01L35/00
摘要： The semiconductor integrated circuit is provided, in which an external temperature control or temperature monitoring is possible, with little influence by the noise of a system board which mounts the semiconductor integrated circuit. The semiconductor integrated circuit includes the temperature detection circuit which detects the chip temperature, and the functional module which flows a large operating current. An external terminal which supplies operating voltage, and an external terminal which supplies ground voltage are coupled to the functional module. The temperature detection circuit generates a temperature detection signal and a reference signal. The reference signal and the temperature detection signal are led out to the exterior of the semiconductor integrated circuit via a first external output terminal and a second external output terminal, respectively, and are supplied to an external temperature control/monitoring circuit which has a circuitry type of a differential amplifier circuit.
摘要翻译： 提供了半导体集成电路，其中可以进行外部温度控制或温度监视，几乎不受安装半导体集成电路的系统板的噪声的影响。 半导体集成电路包括检测芯片温度的温度检测电路和流过大的工作电流的功能模块。 提供工作电压的外部端子和提供接地电压的外部端子耦合到功能模块。 温度检测电路产生温度检测信号和参考信号。 参考信号和温度检测信号分别经由第一外部输出端子和第二外部输出端子被引出到半导体集成电路的外部，并且被提供给具有电路类型的外部温度控制/监视电路 的差分放大电路。
-
公开(公告)号：US07205755B2
公开(公告)日：2007-04-17
申请号：US11390276
申请日：2006-03-28
IPC分类号： G05F3/16
CPC分类号： G05F3/222
摘要： A difference between both emitter voltages of a first transistor having an emitter through which a first current flows, and at least one second transistor having an emitter through which such a second current as to reach a current density thereof smaller than that of the emitter of the first transistor flows, is applied across a first resistor. A second resistor is provided between the emitter of the second transistor and a circuit's ground potential. A third resistor and a fourth resistor are respectively provided between collectors of the first and second transistors and a power supply voltage. Such an output voltage that a collector voltage of the first transistor and a collector voltage of the second transistor become equal is formed in response to the collector voltage of the first transistor and the collector voltage of the second transistor and supplied to bases of the first and second transistors in common. A temperature sense voltage is formed from a connecting point of the first and second resistors.
摘要翻译： 具有第一电流流经的发射极的第一晶体管的两个发射极电压和至少一个具有发射极的第二晶体管之间的差异，通过该发射极，这样的第二电流达到其电流密度小于 第一晶体管流过第一电阻器。 第二电阻器设置在第二晶体管的发射极和电路的地电位之间。 分别在第一和第二晶体管的集电极之间设置第三电阻器和第四电阻器，以及电源电压。 响应于第一晶体管的集电极电压和第二晶体管的集电极电压而形成第一晶体管的集电极电压和第二晶体管的集电极电压相等的这种输出电压，并被提供给第一晶体管的基极和 第二个晶体管是共同的。 温度感测电压由第一和第二电阻器的连接点形成。
-
公开(公告)号：US09389127B2
公开(公告)日：2016-07-12
申请号：US13612656
申请日：2012-09-12
申请人： Tadashi Kameyama , Takanobu Naruse , Takayasu Ito
发明人： Tadashi Kameyama , Takanobu Naruse , Takayasu Ito
摘要： A temperature sensor in a semiconductor device includes a temperature detection circuit for outputting a voltage according to the chip temperature, a reference voltage generating circuit for generating a plurality of reference voltages, and a plurality of voltage comparators for comparing each reference voltage with an output voltage of the temperature detection circuit and thereby generating a chip temperature detection signal configured with multiple bits. Further, the temperature sensor includes a control circuit for controlling the reference voltages generated by the reference voltage generating circuit based on the chip temperature detection signal and thereby changing correspondence between the chip temperature detection signal and the chip temperature to shift a chip temperature detection range. It is possible to expand the chip temperature detection range by changing the correspondence between the chip temperature detection signal and the chip temperature, without increasing the number of voltage comparators.
摘要翻译： 半导体器件中的温度传感器包括用于输出根据芯片温度的电压的温度检测电路，用于产生多个参考电压的参考电压产生电路，以及用于将每个参考电压与输出电压进行比较的多个电压比较器 从而产生配置有多个位的芯片温度检测信号。 此外，温度传感器包括控制电路，用于基于芯片温度检测信号来控制由基准电压产生电路产生的参考电压，从而改变芯片温度检测信号和芯片温度之间的对应关系，以移动芯片温度检测范围。 通过改变芯片温度检测信号和芯片温度之间的对应关系，可以扩大芯片温度检测范围，而不增加电压比较器的数量。
-
公开(公告)号：US20130073240A1
公开(公告)日：2013-03-21
申请号：US13612656
申请日：2012-09-12
申请人： Tadashi KAMEYAMA , Takanobu Naruse , Takayasu Ito
发明人： Tadashi KAMEYAMA , Takanobu Naruse , Takayasu Ito
摘要： A temperature sensor in a semiconductor device includes a temperature detection circuit for outputting a voltage according to the chip temperature, a reference voltage generating circuit for generating a plurality of reference voltages, and a plurality of voltage comparators for comparing each reference voltage with an output voltage of the temperature detection circuit and thereby generating a chip temperature detection signal configured with multiple bits. Further, the temperature sensor includes a control circuit for controlling the reference voltages generated by the reference voltage generating circuit based on the chip temperature detection signal and thereby changing correspondence between the chip temperature detection signal and the chip temperature to shift a chip temperature detection range. It is possible to expand the chip temperature detection range by changing the correspondence between the chip temperature detection signal and the chip temperature, without increasing the number of voltage comparators.
摘要翻译： 半导体器件中的温度传感器包括用于输出根据芯片温度的电压的温度检测电路，用于产生多个参考电压的参考电压产生电路，以及用于将每个参考电压与输出电压进行比较的多个电压比较器 从而产生配置有多个位的芯片温度检测信号。 此外，温度传感器包括控制电路，用于基于芯片温度检测信号来控制由基准电压产生电路产生的参考电压，从而改变芯片温度检测信号和芯片温度之间的对应关系，以移动芯片温度检测范围。 通过改变芯片温度检测信号和芯片温度之间的对应关系，可以扩大芯片温度检测范围，而不增加电压比较器的数量。
-
公开(公告)号：US07372245B2
公开(公告)日：2008-05-13
申请号：US11727559
申请日：2007-03-27
CPC分类号： G05F3/222
摘要： A difference between both emitter voltages of a first transistor having an emitter through which a first current flows, and at least one second transistor having an emitter through which such a second current as to reach a current density thereof smaller than that of the emitter of the first transistor flows, is applied across a first resistor. A second resistor is provided between the emitter of the second transistor and a circuit's ground potential. A third resistor and a fourth resistor are respectively provided between collectors of the first and second transistors and a power supply voltage. Such an output voltage that a collector voltage of the first transistor and a collector voltage of the second transistor become equal is formed in response to the collector voltage of the first transistor and the collector voltage of the second transistor and supplied to bases of the first and second transistors in common. A temperature sense voltage is formed from a connecting point of the first and second resistors.
摘要翻译： 具有第一电流流经的发射极的第一晶体管的两个发射极电压和至少一个具有发射极的第二晶体管之间的差异，通过该发射极，这样的第二电流达到其电流密度小于 第一晶体管流过第一电阻器。 第二电阻器设置在第二晶体管的发射极和电路的地电位之间。 分别在第一和第二晶体管的集电极之间设置第三电阻器和第四电阻器，以及电源电压。 响应于第一晶体管的集电极电压和第二晶体管的集电极电压而形成第一晶体管的集电极电压和第二晶体管的集电极电压相等的这种输出电压，并被提供给第一晶体管的基极和 第二个晶体管是共同的。 温度感测电压由第一和第二电阻器的连接点形成。
-
公开(公告)号：US20070170907A1
公开(公告)日：2007-07-26
申请号：US11727559
申请日：2007-03-27
IPC分类号： G05F3/20
CPC分类号： G05F3/222
摘要： A difference between both emitter voltages of a first transistor having an emitter through which a first current flows, and at least one second transistor having an emitter through which such a second current as to reach a current density thereof smaller than that of the emitter of the first transistor flows, is applied across a first resistor. A second resistor is provided between the emitter of the second transistor and a circuit's ground potential. A third resistor and a fourth resistor are respectively provided between collectors of the first and second transistors and a power supply voltage. Such an output voltage that a collector voltage of the first transistor and a collector voltage of the second transistor become equal is formed in response to the collector voltage of the first transistor and the collector voltage of the second transistor and supplied to bases of the first and second transistors in common. A temperature sense voltage is formed from a connecting point of the first and second resistors.
-
公开(公告)号：US20060220634A1
公开(公告)日：2006-10-05
申请号：US11390276
申请日：2006-03-28
IPC分类号： G05F3/16
CPC分类号： G05F3/222
摘要： A difference between both emitter voltages of a first transistor having an emitter through which a first current flows, and at least one second transistor having an emitter through which such a second current as to reach a current density thereof smaller than that of the emitter of the first transistor flows, is applied across a first resistor. A second resistor is provided between the emitter of the second transistor and a circuit's ground potential. A third resistor and a fourth resistor are respectively provided between collectors of the first and second transistors and a power supply voltage. Such an output voltage that a collector voltage of the first transistor and a collector voltage of the second transistor become equal is formed in response to the collector voltage of the first transistor and the collector voltage of the second transistor and supplied to bases of the first and second transistors in common. A temperature sense voltage is formed from a connecting point of the first and second resistors.
摘要翻译： 具有第一电流流经的发射极的第一晶体管的两个发射极电压和至少一个具有发射极的第二晶体管之间的差异，通过该发射极，这样的第二电流达到其电流密度小于 第一晶体管流过第一电阻器。 第二电阻器设置在第二晶体管的发射极和电路的地电位之间。 分别在第一和第二晶体管的集电极之间设置第三电阻器和第四电阻器，以及电源电压。 响应于第一晶体管的集电极电压和第二晶体管的集电极电压而形成第一晶体管的集电极电压和第二晶体管的集电极电压相等的这种输出电压，并被提供给第一晶体管的基极和 第二个晶体管是共同的。 温度感测电压由第一和第二电阻器的连接点形成。
-
-
-
-
-
-
-
-
-
搜索结果
48 条记录 (耗时 0.035 秒)