公开(公告)号：US20200350416A1

公开(公告)日：2020-11-05

申请号：US16927953

申请日：2020-07-13

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Chia-Ming HSU ,  Pei-Yu CHOU ,  Chih-Pin TSAO ,  Kuang-Yuan HSU ,  Jyh-Huei CHEN

IPC分类号： H01L29/45 ,  H01L23/485 ,  H01L21/768 ,  H01L29/66 ,  H01L29/417 ,  H01L23/532 ,  H01L21/3205 ,  H01L21/8234 ,  H01L27/088

摘要： A semiconductor device includes a source/drain region, a source/drain silicide layer formed on the source/drain region, and a first contact disposed over the source/drain silicide layer. The first contact includes a first metal layer, an upper surface of the first metal layer is at least covered by a silicide layer, and the silicide layer includes a same metal element as the first metal layer.

公开(公告)号：US20170222008A1

公开(公告)日：2017-08-03

申请号：US15378574

申请日：2016-12-14

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Chia-Ming HSU ,  Chih-Pin TSAO ,  Jyh-Huei CHEN ,  Kuang-Yuan HSU ,  Pei-Yu CHOU

IPC分类号： H01L29/45 ,  H01L21/8234 ,  H01L27/088 ,  H01L21/768 ,  H01L21/3205

CPC分类号： H01L29/45 ,  H01L21/0214 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/32053 ,  H01L21/76802 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76877 ,  H01L21/823418 ,  H01L27/0886 ,  H01L29/665 ,  H01L29/7848

摘要： In a method of manufacturing a semiconductor device, a first contact hole is formed in one or more dielectric layers disposed over a source/drain region or a gate electrode. An adhesive layer is formed in the first contact hole. A first metal layer is formed on the adhesive layer in the first contact hole. A silicide layer is formed on an upper surface of the first metal layer. The silicide layer includes a same metal element as the first metal layer.