EXPOSURE METHOD AND EXPOSURE APPARATUS
    1.
    发明申请

    公开(公告)号:US20190146351A1

    公开(公告)日:2019-05-16

    申请号:US15906580

    申请日:2018-02-27

    摘要: In a method executed in an exposure apparatus, a focus control effective region and a focus control exclusion region are set based on an exposure map and a chip area layout within an exposure area. Focus-leveling data are measured over a wafer. A photo resist layer on the wafer is exposed with an exposure light. When a chip area of a plurality of chip areas of the exposure area is located within an effective region of a wafer, the chip area is included in the focus control effective region, and when a part of or all of a chip area of the plurality of chip areas is located on or outside a periphery of the effective region of the wafer, the chip area is included in the focus control exclusion region In the exposing, a focus-leveling is controlled by using the focus-leveling data measured at the focus control effective region.

    EXPOSURE METHOD AND EXPOSURE APPARATUS
    2.
    发明申请

    公开(公告)号:US20200379361A1

    公开(公告)日:2020-12-03

    申请号:US16994804

    申请日:2020-08-17

    摘要: In a method executed in an exposure apparatus, a focus control effective region and a focus control exclusion region are set based on an exposure map and a chip area layout within an exposure area. Focus-leveling data are measured over a wafer. A photo resist layer on the wafer is exposed with an exposure light. When a chip area of a plurality of chip areas of the exposure area is located within an effective region of a wafer, the chip area is included in the focus control effective region, and when a part of or all of a chip area of the plurality of chip areas is located on or outside a periphery of the effective region of the wafer, the chip area is included in the focus control exclusion region In the exposing, a focus-leveling is controlled by using the focus-leveling data measured at the focus control effective region.

    FOCUS METROLOGY METHOD AND PHOTOLITHOGRAPHY METHOD AND SYSTEM
    3.
    发明申请
    FOCUS METROLOGY METHOD AND PHOTOLITHOGRAPHY METHOD AND SYSTEM 有权
    重点计量方法和光刻方法与系统

    公开(公告)号:US20160018743A1

    公开(公告)日:2016-01-21

    申请号:US14332116

    申请日:2014-07-15

    IPC分类号: G03F7/20 G01B11/06

    摘要: The present disclosure provides a focus metrology method and photolithography method and system. The focus metrology method includes recognizing at least one relevant region and at least one irrelevant region on a workpiece surface, measuring a height of the relevant region and determining a focal length for an exposure process based on the measured height of the relevant region.

    摘要翻译: 本公开提供了一种重点测量方法和光刻方法和系统。 重点测量方法包括识别工件表面上的至少一个相关区域和至少一个不相关区域,基于相关区域的测量高度来测量相关区域的高度并确定曝光过程的焦距。