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公开(公告)号：US20200379361A1
公开(公告)日：2020-12-03
申请号：US16994804
申请日：2020-08-17
发明人： Yung-Yao LEE , Heng-Hsin LIU , Hung-Ming KUO , Jui-Chun PENG
IPC分类号： G03F9/00 , G03F7/20 , H01L21/027 , H01L21/67
摘要： In a method executed in an exposure apparatus, a focus control effective region and a focus control exclusion region are set based on an exposure map and a chip area layout within an exposure area. Focus-leveling data are measured over a wafer. A photo resist layer on the wafer is exposed with an exposure light. When a chip area of a plurality of chip areas of the exposure area is located within an effective region of a wafer, the chip area is included in the focus control effective region, and when a part of or all of a chip area of the plurality of chip areas is located on or outside a periphery of the effective region of the wafer, the chip area is included in the focus control exclusion region In the exposing, a focus-leveling is controlled by using the focus-leveling data measured at the focus control effective region.
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公开(公告)号：US20200174372A1
公开(公告)日：2020-06-04
申请号：US16691052
申请日：2019-11-21
发明人： Chen Yi HSU , Shang-Sheng LI , Yung-Yao LEE
IPC分类号： G03F7/16
摘要： A resist material dispensing system includes a resist supply and a resist filter connected to the resist supply downstream from the resist supply. The resist material dispensing system includes a resist tank structure connected to the resist filter downstream from the resist filter and a resist pump device connected to the resist tank structure downstream from the resist tank structure. The resist tank structure is vertically arranged so that a resist material flows in a continuous downward flow from where the resist material enters the resist tank structure until the resist material exits the resist tank structure.
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公开(公告)号：US20190146351A1
公开(公告)日：2019-05-16
申请号：US15906580
申请日：2018-02-27
发明人： Yung-Yao LEE , Heng-Hsin LIU , Hung-Ming KUO , Jui-Chun PENG
IPC分类号： G03F7/20 , H01L21/027 , H01L21/66 , H01L21/67
摘要： In a method executed in an exposure apparatus, a focus control effective region and a focus control exclusion region are set based on an exposure map and a chip area layout within an exposure area. Focus-leveling data are measured over a wafer. A photo resist layer on the wafer is exposed with an exposure light. When a chip area of a plurality of chip areas of the exposure area is located within an effective region of a wafer, the chip area is included in the focus control effective region, and when a part of or all of a chip area of the plurality of chip areas is located on or outside a periphery of the effective region of the wafer, the chip area is included in the focus control exclusion region In the exposing, a focus-leveling is controlled by using the focus-leveling data measured at the focus control effective region.
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公开(公告)号：US20160025650A1
公开(公告)日：2016-01-28
申请号：US14338041
申请日：2014-07-22
发明人： Yung-Yao LEE , Ying-Ying WANG , Shang-Wern CHANG , Heng-Hsin LIU
CPC分类号： G06T7/001 , G01N21/8851 , G01N21/956 , G01N21/95607 , G01N2021/8887 , G06T2207/30148
摘要： The present disclosure provides an overlay metrology method, an overlay control method and an overlay control system. The overlay metrology method includes capturing a current layer image of a current overlay mark on a current layer with a current focal length and capturing a previous layer image of a previous overlay mark on a previous layer with a previous focal length. Then, the overlay metrology method further includes combining the current layer image with the previous layer image to form an overlay mark image and determining an overlay error between the current overlay mark and the previous overlay mark based on the overlay mark image.
摘要翻译： 本公开提供了覆盖计量方法，覆盖控制方法和覆盖控制系统。 覆盖度量方法包括以当前焦距捕获当前层上的当前覆盖标记的当前层图像，并且以先前焦距捕获先前层上的先前叠加标记的先前层图像。 然后，覆盖度量方法还包括将当前层图像与先前层图像组合以形成覆盖标记图像，并且基于重叠标记图像确定当前叠加标记与先前叠加标记之间的重叠误差。
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公开(公告)号：US20150116686A1
公开(公告)日：2015-04-30
申请号：US14066949
申请日：2013-10-30
发明人： Yung-Yao LEE , Ying-Ying WANG , Yi-Ping HSIEH , Heng-Hsin LIU
IPC分类号： G03F9/00
CPC分类号： G03F9/7084 , G03F9/70 , G03F9/7007 , G03F9/7046 , G03F9/7088 , G03F2009/005
摘要： An edge-dominant alignment method for use in an exposure scanner system is provided. The method includes the steps of: providing a wafer having a plurality of shot areas, wherein each shot area has a plurality of alignment marks; determining a first outer zone of the wafer, wherein the first outer zone includes a first portion of the shot areas along a first outer edge of the wafer; determining a scan path according to the shot areas of the first outer zone; and performing an aligning process to each shot area of the first outer zone according to the scan path and an alignment mark of each shot area of the first outer zone.
摘要翻译： 提供了一种用于曝光扫描仪系统的边缘优势对准方法。 该方法包括以下步骤：提供具有多个拍摄区域的晶片，其中每个拍摄区域具有多个对准标记; 确定所述晶片的第一外部区域，其中所述第一外部区域沿所述晶片的第一外部边缘包括所述引射区域的第一部分; 根据所述第一外部区域的拍摄区域确定扫描路径; 以及根据所述扫描路径和所述第一外部区域的每个拍摄区域的对准标记，对所述第一外部区域的每个拍摄区域进行对准处理。
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公开(公告)号：US20170277044A1
公开(公告)日：2017-09-28
申请号：US15182348
申请日：2016-06-14
发明人： Yung-Yao LEE , Jui-Chun PENG , Ho-Ping CHEN , Heng-Hsin LIU
CPC分类号： G03F9/7034 , G03F9/7084 , G03F9/7088
摘要： In a method for fabricating a resist pattern, a substrate coated with a photo resist is loaded on a stage of an exposure apparatus. Underlying patterns are fabricated on the substrate. A surface slope of an exposure area on the substrate is measured. An alignment measurement is performed by detecting an alignment pattern formed in the underlying patterns. An alignment measurement result is corrected based on the measured surface slope. The substrate is aligned to a photo mask by using the corrected alignment measurement result. The photo resist is exposed to radiation passing through the photo mask to form patterns.
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公开(公告)号：US20160018743A1
公开(公告)日：2016-01-21
申请号：US14332116
申请日：2014-07-15
发明人： Hung-Ming KUO , Jui-Chun PENG , Heng-Hsin LIU , Yung-Yao LEE
CPC分类号： G01B11/0608 , G03F7/70641 , G03F9/7026
摘要： The present disclosure provides a focus metrology method and photolithography method and system. The focus metrology method includes recognizing at least one relevant region and at least one irrelevant region on a workpiece surface, measuring a height of the relevant region and determining a focal length for an exposure process based on the measured height of the relevant region.
摘要翻译： 本公开提供了一种重点测量方法和光刻方法和系统。 重点测量方法包括识别工件表面上的至少一个相关区域和至少一个不相关区域，基于相关区域的测量高度来测量相关区域的高度并确定曝光过程的焦距。
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公开(公告)号：US20140240706A1
公开(公告)日：2014-08-28
申请号：US14252612
申请日：2014-04-14
发明人： Yung-Yao LEE , Ying-Ying WANG , Yi-Ping HSIEH , Heng-Hsin LIU
IPC分类号： G01B11/14
CPC分类号： G03F7/70633 , G01B11/14 , G01B2210/56
摘要： A process of measuring overlay metrologies of wafers, the wafer having a plurality of patterned layers. The process begins with retrieving historical overlay metrologies from a database, and real overlay metrologies of a first group of the wafers are measured. On the other hand, virtual overlay metrologies of a second group of the wafers are calculated with the retrieved historical overly metrologies. The real overlay metrologies of the first group of the wafers and the virtual overlay metrologies of the second group of the wafers are stored to the database as the historical overlay metrologies.
摘要翻译： 测量晶片叠加计量的过程，晶片具有多个图案化层。 该过程开始于从数据库中检索历史叠加计量，并且测量第一组晶片的实际重叠计量。 另一方面，第二组晶片的虚拟覆盖计量学用所检索的历史过度计量来计算。 第一组晶圆的真实覆盖计量学和第二组晶圆的虚拟覆盖计量学作为历史重叠计量存储到数据库。
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