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公开(公告)号：US11335817B2
公开(公告)日：2022-05-17
申请号：US16845005
申请日：2020-04-09
发明人： Cheng-Han Lin , Chao-Ching Chang , Yi-Ming Lin , Yen-Ting Chou , Yen-Chang Chen , Sheng-Chan Li , Cheng-Hsien Chou
IPC分类号： H01L31/0216 , H01L31/18 , H01L27/146 , H01L31/0232
摘要： A device and method for fabricating the same is disclosed. For example, the device includes a sensor having a front side and a back side, a metal interconnect layer formed on the front side of the sensor, an anti-reflective coating formed on the back side of the sensor, a composite etch stop mask layer formed on the anti-reflective coating wherein the composite etch stop mask layer includes a hydrogen rich layer and a compressive high density layer, and a light filter formed on the composite etch stop mask layer.
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公开(公告)号：US11749760B2
公开(公告)日：2023-09-05
申请号：US17744398
申请日：2022-05-13
发明人： Cheng-Han Lin , Chao-Ching Chang , Yi-Ming Lin , Yen-Ting Chou , Yen-Chang Chen , Sheng-Chan Li , Cheng-Hsien Chou
IPC分类号： H01L31/0216 , H01L31/18 , H01L27/146 , H01L31/0232
CPC分类号： H01L31/0216 , H01L27/14636 , H01L31/0232 , H01L31/18
摘要： A device and method for fabricating the same is disclosed. For example, the device includes a sensor having a front side and a back side, a metal interconnect layer formed on the front side of the sensor, an anti-reflective coating formed on the back side of the sensor, a composite etch stop mask layer formed on the anti-reflective coating wherein the composite etch stop mask layer includes a hydrogen rich layer and a compressive high density layer, and a light filter formed on the composite etch stop mask layer.
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