公开(公告)号：US20220367445A1

公开(公告)日：2022-11-17

申请号：US17874176

申请日：2022-07-26

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. ,  NATIONAL YANG MING CHIAO TUNG UNIVERSITY

发明人： Chenming HU ,  Po-Tsang HUANG

IPC分类号： H01L27/06 ,  H01L27/12 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8234 ,  H01L23/522

摘要： A method includes following steps. An interconnect structure is formed over a first transistor. A dielectric layer is formed over the interconnect structure. The dielectric layer is etched to form holes in the dielectric layer. An amorphous layer is deposited in the holes of the dielectric layer and on a top surface of the dielectric layer. The amorphous layer is crystallized into a polycrystalline layer. A second transistor is formed on the polycrystalline layer.

公开(公告)号：US20240355816A1

公开(公告)日：2024-10-24

申请号：US18762138

申请日：2024-07-02

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. ,  NATIONAL YANG MING CHIAO TUNG UNIVERSITY

发明人： Chenming HU ,  Po-Tsang HUANG

IPC分类号： H01L27/06 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8234 ,  H01L23/522 ,  H01L27/12

CPC分类号： H01L27/0688 ,  H01L21/02496 ,  H01L21/8221 ,  H01L21/823475 ,  H01L23/5226 ,  H01L27/1207

摘要： An IC structure includes a first transistor, an interconnect structure, a dielectric layer, a polysilicon fin, and a second transistor. The first transistor is over a substrate. The interconnect structure is over the first transistor. The dielectric layer is over the interconnect structure. The polysilicon fin includes a first portion laterally extending over the dielectric layer, and a second portion extending through the dielectric layer to a metal material within the interconnect structure. The second transistor is formed on the first portion of the polysilicon fin.

公开(公告)号：US20230411388A1

公开(公告)日：2023-12-21

申请号：US17843195

申请日：2022-06-17

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. ,  National Yang Ming Chiao Tung University

发明人： Chenming HU ,  Kuan-Neng CHEN ,  Po-Tsang HUANG ,  Hao-Tung CHUNG ,  Bo-Jheng SHIH ,  Yu-Ming PAN

IPC分类号： H01L27/088 ,  H01L23/528 ,  H01L23/522 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L27/0886 ,  H01L23/5283 ,  H01L29/7851 ,  H01L29/66795 ,  H01L23/5226

摘要： An IC structure includes a first transistor, a dielectric layer, a plurality of semiconductor pillars, a plurality of semiconductor plugs, a semiconductor structure, and a second transistor. The first transistor is formed on a substrate. The dielectric layer is above the first transistor. The semiconductor pillars extend from the substrate into the dielectric layer. The semiconductor plugs extend from a top surface of the dielectric layer into the dielectric layer to the plurality of semiconductor pillars. The semiconductor structure is disposed over the top surface of the dielectric layer. The second transistor is formed on the semiconductor structure.