公开(公告)号：US20240234135A1

公开(公告)日：2024-07-11

申请号：US18429845

申请日：2024-02-01

申请人： SAMSUNG ELECTRONICS CO., LTD. ,  iBeam Materials, Inc.

发明人： Junhee CHOI ,  Vladmir MATIAS ,  Joohun HAN

IPC分类号： H01L21/02

CPC分类号： H01L21/02502 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02496 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02516 ,  H01L21/02598 ,  H01L21/02192 ,  H01L21/02266 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02631

摘要： A single crystal semiconductor includes a strain compensation layer; an amorphous substrate disposed on the strain compensation layer; a lattice matching layer disposed on the amorphous substrate and including two or more single crystal layers; and a single crystal semiconductor layer disposed on the lattice matching layer, the lattice matching layer including a direction control film disposed on the amorphous substrate and including a single crystal structure, and a buffer layer including a material different from that of the direction control film, the buffer layer being disposed on the direction control film and including a single crystal structure.

公开(公告)号：US12021137B2

公开(公告)日：2024-06-25

申请号：US17578569

申请日：2022-01-19

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Oreste Madia

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L21/44 ,  H01L29/49 ,  H01L29/786

CPC分类号： H01L29/66969 ,  H01L21/02496 ,  H01L21/02565 ,  H01L21/02614 ,  H01L21/44 ,  H01L29/4908 ,  H01L29/78642 ,  H01L29/7869 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02488

摘要： A method of forming a semiconductor device may include depositing a NiAl layer on a substrate, oxidizing the NiAl layer to form a bilayer including a NiO semiconducting material layer and an AlOx layer on the NiO semiconducting material layer, forming a semiconductor layer including the NiO semiconducting material layer, the semiconductor layer also including a channel region, and forming a gate dielectric on the channel region of the semiconductor layer.

公开(公告)号：US09960077B1

公开(公告)日：2018-05-01

申请号：US15679848

申请日：2017-08-17

申请人： GLOBALFOUNDRIES Inc.

发明人： Hui Zang ,  Josef Watts ,  Ruilong Xie

IPC分类号： H01L21/8234 ,  H01L21/762 ,  H01L21/02 ,  H01L27/088 ,  G03F7/20 ,  H01L21/28 ,  H01L29/78

CPC分类号： H01L21/76264 ,  G03F7/70633 ,  H01L21/02381 ,  H01L21/02496 ,  H01L21/28141 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/785

摘要： Methods of forming a self-aligned CT pillar with the same CD width as the device fins to enable PC isolation and the resulting devices are provided. Embodiments include forming a plurality of fins over a substrate; forming an oxide layer over the substrate and between each fin; removing a portion of a central fin among the plurality, a trench formed in the oxide layer; forming a CT pillar in the trench; recessing the oxide layer below an upper surface of the plurality of fins; forming a gate over the plurality of fins and CT pillar; planarizing the gate down to the CT pillar; and forming a cap layer over the gate and CT pillar.

公开(公告)号：US20170162387A1

公开(公告)日：2017-06-08

申请号：US15177495

申请日：2016-06-09

申请人： International Business Machines Corporation

发明人： CHENG-WEI CHENG ,  SANGHOON LEE ,  KUEN-TING SHIU

IPC分类号： H01L21/02 ,  H01L29/66 ,  H01L29/78 ,  H01L29/20

CPC分类号： H01L21/02491 ,  H01L21/02381 ,  H01L21/02436 ,  H01L21/02463 ,  H01L21/02496 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/823431 ,  H01L21/8252 ,  H01L27/0886 ,  H01L29/20 ,  H01L29/267 ,  H01L29/66522 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/7849 ,  H01L29/785 ,  H01L29/7851

摘要： A method of forming a semiconductor device is provided. The method includes depositing an aluminum-base interlayer on a silicon substrate, the aluminum-base interlayer having a thickness of less than about 100 nanometers; and growing a III-V compound material on the aluminum-base interlayer. The aluminum-base interlayer deposited directly on silicon allows for continuous and planar growth of III-V compound materials on the interlayer, which facilitates the manufacture of high quality electronic devices.

公开(公告)号：US20080230779A1

公开(公告)日：2008-09-25

申请号：US12011454

申请日：2008-01-28

申请人： Amit Goyal

发明人： Amit Goyal

IPC分类号： H01L51/00

CPC分类号： H01L21/02521 ,  H01L21/02425 ,  H01L21/02433 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02496 ,  H01L21/02516 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02554 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02617 ,  H01L31/0392 ,  H01L31/03925 ,  H01L31/03928 ,  H01L31/0725 ,  H01L33/16 ,  H01L2924/0002 ,  Y02E10/50 ,  Y02E10/541 ,  H01L2924/00

摘要： Novel articles and methods to fabricate the same resulting in flexible, large-area, [100] or [110] textured, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

摘要翻译： 公开了用于制造相同的新型制品和方法，从而产生柔性，大面积[100]或[110]织构化的基于半导体的电子器件。 所得物品的潜在应用是在光伏器件，平板显示器，热光伏器件，铁电器件，发光二极管器件，计算机硬盘驱动器件，基于磁阻的器件，基于光致发光的器件，非易失性存储器件，介质器件 ，热电装置和量子点激光装置。

公开(公告)号：US20240079233A1

公开(公告)日：2024-03-07

申请号：US18509050

申请日：2023-11-14

申请人： HUAWEI TECHNOLOGIES CO., LTD.

发明人： Gilberto Curatola ,  Marco Silvestri

IPC分类号： H01L21/02 ,  H01L27/06 ,  H01L29/24 ,  H01L29/78 ,  H01L29/812 ,  H01L29/872 ,  H01L31/032 ,  H01L31/108

CPC分类号： H01L21/02565 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02496 ,  H01L21/02576 ,  H01L21/02617 ,  H01L27/0629 ,  H01L29/24 ,  H01L29/78 ,  H01L29/812 ,  H01L29/872 ,  H01L31/032 ,  H01L31/108

摘要： A member is provided which includes a silicon base substrate layer, a transition layer arranged over the silicon base substrate layer, and a gallium nitride (GaN) buffer layer arranged over the transition layer. The member further includes a gallium oxide layer. The member is beneficial for co-integration of ultra-wide-bandgap technology with wide bandgap technology, such as by using the gallium oxide layer with the gallium nitride buffer layer on cheap silicon substrates, such as the silicon base substrate layer. Therefore, the member provides access to establish the gallium nitride buffer layer (or gallium nitride) on the silicon base substrate layer (or silicon production lines) with improved thermal conductivity and higher electrical performance.

公开(公告)号：US20230420253A1

公开(公告)日：2023-12-28

申请号：US18466644

申请日：2023-09-13

申请人： Ramesh Kumar Harjivan Kakkad

发明人： Ramesh Kumar Harjivan Kakkad

IPC分类号： H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L29/167

CPC分类号： H01L21/02667 ,  H01L21/0245 ,  H01L21/02532 ,  H01L29/78675 ,  H01L21/02573 ,  H01L29/66757 ,  H01L29/167 ,  H01L21/02592 ,  H01L21/02672 ,  H01L21/02496

摘要： A method of producing a polycrystalline silicon TFT includes forming nickel patterns on a substrate, forming a phosphorus doped silicon layer over the substrate and nickel patterns, and forming an intrinsic silicon layer on the phosphorus doped silicon layer. Alternatively, the intrinsic silicon layer can be formed on the substrate, the phosphorus doped silicon layer on the intrinsic silicon layer, and the nickel patterns on the phosphorus doped silicon layer. The structure is annealed to crystallize the phosphorus doped silicon and intrinsic silicon layers. A method of forming a crystalline silicon layer of a TFT device includes forming a first silicon film, forming a phosphorus doped silicon film on the first silicon film, forming a nickel film on the phosphorus doped silicon film, and annealing the structure to crystallize the phosphorus doped silicon and first silicon films. The first silicon and phosphorous doped silicon films are amorphous at formation.

公开(公告)号：US11830733B2

公开(公告)日：2023-11-28

申请号：US17656762

申请日：2022-03-28

申请人： Alliance for Sustainable Energy, LLC

发明人： John Stanley Mangum ,  William Edwin Mcmahon ,  Emily Lowell Warren ,  San Theingi

IPC分类号： H01L21/02 ,  H01L21/78

CPC分类号： H01L21/02496 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/7813

摘要： Described herein are systems and methods of utilizing nanochannels generated in the sacrificial layer of a semiconductor substrate to increase epitaxial lift-off speeds and facilitate reusability of GaAs substrates. The provided systems and methods may utilize unique nanochannel geometries to increase the surface area exposed to the etchant and further decrease etch times.

公开(公告)号：US08987736B2

公开(公告)日：2015-03-24

申请号：US12011454

申请日：2008-01-28

申请人： Amit Goyal

发明人： Amit Goyal

IPC分类号： H01L29/04 ,  H01L21/02 ,  H01L31/0392 ,  H01L31/0725 ,  H01L33/16

CPC分类号： H01L21/02521 ,  H01L21/02425 ,  H01L21/02433 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02496 ,  H01L21/02516 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02554 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02617 ,  H01L31/0392 ,  H01L31/03925 ,  H01L31/03928 ,  H01L31/0725 ,  H01L33/16 ,  H01L2924/0002 ,  Y02E10/50 ,  Y02E10/541 ,  H01L2924/00

摘要： Novel articles and methods to fabricate the same resulting in flexible, large-area, [100] or [110] textured, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

摘要翻译： 公开了用于制造相同的新型制品和方法，从而产生柔性，大面积[100]或[110]织构化的基于半导体的电子器件。 所得物品的潜在应用是在光伏器件，平板显示器，热光伏器件，铁电器件，发光二极管器件，计算机硬盘驱动器件，基于磁阻的器件，基于光致发光的器件，非易失性存储器件，介质器件 ，热电装置和量子点激光装置。

公开(公告)号：US20050239274A1

公开(公告)日：2005-10-27

申请号：US10830729

申请日：2004-04-23

申请人： Vincent Gambin ,  Donald Sawdai

发明人： Vincent Gambin ,  Donald Sawdai

IPC分类号： C30B29/40 ,  H01L21/20 ,  H01L21/203 ,  H01L21/28

CPC分类号： H01L21/02496 ,  H01L21/02387 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02549 ,  H01L21/02639

摘要： Formation of a regrowth layer of a Group III-V semiconductor material is facilitated by prior formation of an intermediate layer, selected primarily for its smooth morphology properties. The intermediate layer is formed over an underlying substrate and over a dielectric layer formed over portions of the substrate. The intermediate layer maintains the monocrystalline properties of the underlying substrate in regions other than those covered by the dielectric layer, and improves the electrical and morphology properties of the regrowth layer formed over the intermediate layer.

摘要翻译： 通过预先形成主要由于其光滑形态特性选择的中间层，促进了III-V族半导体材料的再生长层的形成。 中间层形成在下面的衬底之上并且形成在衬底的部分上形成的电介质层上。 中间层保持底层基板在不同于由介电层覆盖的那些区域以外的区域的单晶性质，并改善了在中间层上形成的再生长层的电学和形貌特性。