-
公开(公告)号：US11658206B2
公开(公告)日：2023-05-23
申请号：US16949769
申请日：2020-11-13
发明人： En-Shuo Lin , Sheng Ko , Chi-Fu Lin , Che-Yi Lin , Clark Lee
CPC分类号： H01L28/65 , H01G4/005 , H01G4/35 , H01L23/642
摘要： A deep trench structure may be formed between electrodes of a capacitive device. The deep trench structure may be formed to a depth, a width, and/or an aspect ratio that increases the volume of the deep trench structure relative to a trench structure formed using a metal etch-stop layer. Thus, the deep trench structure is capable of being filled with a greater amount of dielectric material, which increases the capacitance value of the capacitive device. Moreover, the parasitic capacitance of the capacitive device may be decreased by omitting the metal etch-stop layer. Accordingly, the deep trench structure (and the omission of the metal etch-stop layer) may increase the sensitivity of the capacitive device, may increase the humidity-sensing performance of the capacitive device, and/or may increase the performance of devices and/or integrated circuits in which the capacitive device is included.
-
公开(公告)号：US09985094B2
公开(公告)日：2018-05-29
申请号：US14141720
申请日：2013-12-27
发明人： Jheng-Sheng You , Che-Yi Lin , Shen-Ping Wang , Lieh-Chuan Chen , Chih-Heng Shen , Po-Tao Chu
CPC分类号： H01L29/0634 , H01L29/0649 , H01L29/407 , H01L29/66712 , H01L29/78 , H01L29/7802
摘要： A super junction includes a substrate and an epitaxial layer over the substrate, the epitaxial layer having a first dopant type. The super junction further includes an angled trench in the epitaxial layer, the angled trench having sidewalls disposed at an angle ranging from about 85-degrees to about 89-degrees with respect to a top surface of the epitaxial layer. The super junction further includes a doped body in the epitaxial layer surrounding the angled trench, the doped body having a second dopant type, the second dopant type opposite that of the first dopant type.
-
搜索结果
2 条记录 (耗时 0.013 秒)
