公开(公告)号：US09985094B2

公开(公告)日：2018-05-29

申请号：US14141720

申请日：2013-12-27

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Jheng-Sheng You ,  Che-Yi Lin ,  Shen-Ping Wang ,  Lieh-Chuan Chen ,  Chih-Heng Shen ,  Po-Tao Chu

IPC分类号： H01L29/66 ,  H01L21/36 ,  H01L29/06 ,  H01L29/78 ,  H01L29/40

CPC分类号： H01L29/0634 ,  H01L29/0649 ,  H01L29/407 ,  H01L29/66712 ,  H01L29/78 ,  H01L29/7802

摘要： A super junction includes a substrate and an epitaxial layer over the substrate, the epitaxial layer having a first dopant type. The super junction further includes an angled trench in the epitaxial layer, the angled trench having sidewalls disposed at an angle ranging from about 85-degrees to about 89-degrees with respect to a top surface of the epitaxial layer. The super junction further includes a doped body in the epitaxial layer surrounding the angled trench, the doped body having a second dopant type, the second dopant type opposite that of the first dopant type.

公开(公告)号：US10686036B2

公开(公告)日：2020-06-16

申请号：US15587005

申请日：2017-05-04

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Fu-Hsiung Yang ,  Long-Shih Lin ,  Kun-Ming Huang ,  Chih-Heng Shen ,  Po-Tao Chu

IPC分类号： H01L29/08 ,  H01L21/02 ,  H01L21/265 ,  H01L21/306 ,  H01L29/66 ,  H01L29/739 ,  H01L21/266 ,  H01L21/324 ,  H01L29/06

摘要： A method of making a bipolar transistor includes patterning a first photoresist over a collector region of the bipolar transistor, the first photoresist defining a first opening. The method further includes performing a first implantation process through the first opening. The method further includes patterning a second photoresist over the collector region, the second photoresist defining a second opening different from the first opening. The method further includes performing a second implantation process through the second opening, wherein a dopant concentration resulting from the second implantation process is different from a dopant concentration resulting from the first implantation process.

公开(公告)号：US09312348B2

公开(公告)日：2016-04-12

申请号：US14220828

申请日：2014-03-20

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Tsai-Feng Yang ,  Chun-Yi Yang ,  Kun-Ming Huang ,  Shen-Ping Wang ,  Chih-Heng Shen ,  Po-Tao Chu

IPC分类号： H01L29/66 ,  H01L29/417 ,  H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H01L27/02

CPC分类号： H01L29/7823 ,  H01L27/0266 ,  H01L29/0623 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0869 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/1083 ,  H01L29/41758 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66681 ,  H01L29/66696 ,  H01L29/7816 ,  H01L29/7824

摘要： A semiconductor device comprises a semiconductor substrate, a first layer over the semiconductor substrate, and a drain region in the first layer. The drain region comprises a drain rectangular portion having a first end and a second end, a first drain end portion contiguous with the drain rectangular portion and extending from the first end of the drain rectangular portion away from a center of the drain region, and a second drain end portion contiguous with the drain rectangular portion and extending from the second end of the drain rectangular portion away from the center of the drain region. The semiconductor device also comprises a source region free from contact with and surrounding the drain region in the first layer. The first drain end portion and the second drain end portion have a same doping type and a different doping concentration than the drain rectangular portion.

摘要翻译： 半导体器件包括半导体衬底，半导体衬底上的第一层和第一层中的漏极区。 漏极区域包括具有第一端和第二端的漏极矩形部分，与漏极矩形部分相邻并从漏极矩形部分的第一端延伸离开漏极区域的中心的第一漏极端部分，以及 第二排水端部分与排水矩形部分相邻并从排水矩形部分的第二端延伸远离排放区域的中心。 半导体器件还包括与第一层中的漏极区域不接触和围绕的区域的源极区域。 第一漏极端部和第二漏极端部具有与漏极矩形部分相同的掺杂类型和不同的掺杂浓度。

公开(公告)号：US09647065B2

公开(公告)日：2017-05-09

申请号：US14056393

申请日：2013-10-17

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Fu-Hsiung Yang ,  Long-Shih Lin ,  Kun-Ming Huang ,  Chih-Heng Shen ,  Po-Tao Chu

IPC分类号： H01L29/08 ,  H01L29/739 ,  H01L29/66

CPC分类号： H01L29/0821 ,  H01L21/02236 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/30604 ,  H01L21/324 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/0804 ,  H01L29/0834 ,  H01L29/6625 ,  H01L29/66325 ,  H01L29/7393

摘要： A bipolar transistor includes a substrate and a first well in the substrate, the first well having a first dopant type. The bipolar transistor further includes a split collector region in the first well. The split collector region includes a highly doped central region having a second dopant type opposite the first dopant type; and a lightly doped peripheral region having the second dopant type, the lightly doped peripheral region surrounding the highly doped central region. A dopant concentration of the lightly doped peripheral region is less than a dopant concentration of the highly doped central region.

公开(公告)号：US10461183B2

公开(公告)日：2019-10-29

申请号：US15882193

申请日：2018-01-29

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Tsai-Feng Yang ,  Chih-Heng Shen ,  Chun-Yi Yang ,  Kun-Ming Huang ,  Po-Tao Chu ,  Shen-Ping Wang

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/417 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L27/02 ,  H01L29/423

摘要： A device having a drain region with a drain rectangular portion having a first end and a second end, a first drain end portion contiguous with the drain rectangular portion and extending from the first end of the drain rectangular portion away from a center of the drain region, and a second drain end portion contiguous with the drain rectangular portion and extending from the second end of the drain rectangular portion away from the center of the drain region. The semiconductor device also comprises a source region spaced from and surrounding the drain region in the first layer.

公开(公告)号：US09882046B2

公开(公告)日：2018-01-30

申请号：US15094605

申请日：2016-04-08

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Tsai-Feng Yang ,  Chih-Heng Shen ,  Chun-Yi Yang ,  Kun-Ming Huang ,  Po-Tao Chu ,  Shen-Ping Wang

IPC分类号： H01L21/76 ,  H01L29/66 ,  H01L29/78 ,  H01L29/417 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L27/02 ,  H01L29/423

CPC分类号： H01L29/7823 ,  H01L27/0266 ,  H01L29/0623 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0869 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/1083 ,  H01L29/41758 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66681 ,  H01L29/66696 ,  H01L29/7816 ,  H01L29/7824

摘要： A method includes forming a drain region in a first layer on a semiconductor substrate. The drain region is formed comprising a drain rectangular portion having a first end and a second end, a first drain end portion contiguous with the drain rectangular portion and extending from the first end of the drain rectangular portion away from a center of the drain region, and a second drain end portion contiguous with the drain rectangular portion and extending from the second end of the drain rectangular portion away from the center of the drain region. The method also comprises forming a source region free from contact with and surrounding the drain region in the first layer. The first drain end portion and the second drain end portion are formed having a same doping type and a different doping concentration than the drain rectangular portion.

公开(公告)号：US09748377B2

公开(公告)日：2017-08-29

申请号：US14886314

申请日：2015-10-19

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Tzu-Ming Huang ,  Shen-Ping Wang ,  Lieh-Chuan Chen ,  Chih-Heng Shen ,  Po-Tao Chu

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/417 ,  H01L29/08 ,  H01L29/423 ,  H01L29/06 ,  H01L29/10

CPC分类号： H01L29/7816 ,  H01L29/063 ,  H01L29/0688 ,  H01L29/0692 ,  H01L29/0847 ,  H01L29/1083 ,  H01L29/41758 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7835

摘要： A semiconductor device includes a gate structure, a source region and a drain region. The source region and the drain region are on opposite sides of the gate structure. The source region includes a first region of a first conductivity type and a second region of a second conductivity type. The second conductivity type is opposite to the first conductivity type. The first region is between the second region and the gate structure. The second region includes at least one projection protruding into the first region and toward the gate structure.

公开(公告)号：US20160225899A1

公开(公告)日：2016-08-04

申请号：US15094605

申请日：2016-04-08

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Tsai-Feng Yang ,  Chih-Heng Shen ,  Chun-Yi Yang ,  Kun-Ming Huang ,  Po-Tao Chu ,  Shen-Ping Wang

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/08 ,  H01L29/417 ,  H01L29/06 ,  H01L29/10

CPC分类号： H01L29/7823 ,  H01L27/0266 ,  H01L29/0623 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0869 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/1083 ,  H01L29/41758 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66681 ,  H01L29/66696 ,  H01L29/7816 ,  H01L29/7824

摘要： A method includes forming a drain region in a first layer on a semiconductor substrate. The drain region is formed comprising a drain rectangular portion having a first end and a second end, a first drain end portion contiguous with the drain rectangular portion and extending from the first end of the drain rectangular portion away from a center of the drain region, and a second drain end portion contiguous with the drain rectangular portion and extending from the second end of the drain rectangular portion away from the center of the drain region. The method also comprises forming a source region free from contact with and surrounding the drain region in the first layer. The first drain end portion and the second drain end portion are formed having a same doping type and a different doping concentration than the drain rectangular portion.

摘要翻译： 一种方法包括在半导体衬底上的第一层中形成漏区。 漏极区域形成为包括具有第一端和第二端的漏极矩形部分，与漏极矩形部分相邻并从漏极矩形部分的第一端延伸离开漏极区域的中心的第一漏极端部分， 以及与排水矩形部分相邻并从排水矩形部分的第二端延伸远离排出区域的中心的第二排水端部分。 该方法还包括形成与第一层中的漏极区不接触并围绕其的区域的源区。 第一漏极端部和第二漏极端部形成为具有与漏极矩形部分相同的掺杂类型和不同的掺杂浓度。

公开(公告)号：US09166046B2

公开(公告)日：2015-10-20

申请号：US14181430

申请日：2014-02-14

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Tzu-Ming Huang ,  Shen-Ping Wang ,  Lieh-Chuan Chen ,  Chih-Heng Shen ,  Po-Tao Chu

IPC分类号： H01L29/66 ,  H01L29/78

CPC分类号： H01L29/7816 ,  H01L29/063 ,  H01L29/0688 ,  H01L29/0692 ,  H01L29/0847 ,  H01L29/1083 ,  H01L29/41758 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7835

摘要： A semiconductor device includes a gate structure, and a source region and a drain region on opposite sides of the gate structure. The source region comprises a first region of a first conductivity type, and a second region of a second conductivity type, the second conductivity type opposite to the first conductivity type. The first region is arranged between the second region and the gate structure. The second region comprises at least one projection protruding into the first region and toward the gate structure.

摘要翻译： 半导体器件包括栅极结构，以及栅极结构的相对侧上的源极区域和漏极区域。 源区包括第一导电类型的第一区域和第二导电类型的第二区域，第二导电类型与第一导电类型相反。 第一区域布置在第二区域和栅极结构之间。 第二区域包括突出到第一区域中并朝向栅极结构的至少一个突起。

公开(公告)号：US11233121B2

公开(公告)日：2022-01-25

申请号：US16901729

申请日：2020-06-15

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Fu-Hsiung Yang ,  Long-Shih Lin ,  Kun-Ming Huang ,  Chih-Heng Shen ,  Po-Tao Chu

IPC分类号： H01L29/08 ,  H01L29/739 ,  H01L29/66 ,  H01L21/02 ,  H01L21/265 ,  H01L21/266 ,  H01L21/306 ,  H01L21/324 ,  H01L29/06

摘要： A bipolar transistor includes a substrate having a first well with a first dopant type; and a split collector region in the substrate, the split collector region including a highly doped central region having the first dopant type, and a lightly doped peripheral region having a second dopant type, opposite the first dopant type, wherein the lightly doped peripheral region surrounds the highly doped central region, a dopant concentration of the lightly doped peripheral region ranges from about 5×1012 ions/cm3 to about 5×1013 ions/cm3, and the lightly doped peripheral region has a same maximum depth as the highly doped central region.