Method of designing an integrated circuit and integrated circuit

    公开(公告)号:US11074390B2

    公开(公告)日:2021-07-27

    申请号:US16512062

    申请日:2019-07-15

    IPC分类号: G06F30/394 G06F30/392

    摘要: A method includes reserving a routing track within a cell, the cell includes signal lines for connection to elements within the cell, the cell further includes a plurality of routing tracks, the reserved routing track is one of the plurality of routing tracks, and the reserved routing track is free of the signal lines. The method includes placing the cell in a chip-level layout, wherein the chip-level layout includes a plurality of power rails. The method includes determining whether any of the plurality of power rails overlaps with any of the plurality of routing tracks other than the reserved routing track. The method includes adjusting a position of the cell in the chip-level layout in response to a determination that at least one power rail of the plurality of power rails overlaps with at least one routing track of the plurality of routing tracks other than the reserved routing track.

    System and Method for Transistor Placement in Standard Cell Layout

    公开(公告)号:US20210200927A1

    公开(公告)日:2021-07-01

    申请号:US16732206

    申请日:2019-12-31

    摘要: A system and method for transistor placement in a standard cell layout includes identifying a plurality of transistors in a circuit. A drain terminal of each of the plurality of transistors is connected to an output of the circuit. The system and method also include determining that a first transistor and a second transistor of the plurality of transistors satisfy a merging priority, combining an active region of the first transistor and the second transistor to form a mega transistor having a common active region, and replacing the first transistor and the second transistor in the standard cell layout of the circuit with the mega transistor. The common active region combines the active region of a first drain terminal of the first transistor and a second drain terminal of the second transistor.