公开(公告)号：US20240337918A1

公开(公告)日：2024-10-10

申请号：US18749170

申请日：2024-06-20

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Hung-Yi TSAI ,  Wei-Che HSIEH ,  Ta-Cheng LIEN ,  Hsin-Chang LEE ,  Ping-Hsun LIN ,  Hao-Ping CHENG ,  Ming-Wei CHEN ,  Szu-Ping TSAI

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes a base material made of one or more of a Cr based material, an Ir based material, a Pt based material, or Co based material, and further contains one or more additional elements selected from the group consisting of Si, B, Ge, Al, As, Sb, Te, Se and Bi.

公开(公告)号：US20240337917A1

公开(公告)日：2024-10-10

申请号：US18745236

申请日：2024-06-17

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Pei-Cheng HSU ,  Ching-Huang CHEN ,  Hung-Yi TSAI ,  Ming-Wei CHEN ,  Hsin-Chang LEE ,  Ta-Cheng LIEN

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes one or more alternating pairs of a first Cr based layer and a second Cr based layer different from the first Cr based layer.

公开(公告)号：US20240302735A1

公开(公告)日：2024-09-12

申请号：US18118498

申请日：2023-03-07

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chia-Tung KUO ,  Pei-Cheng HSU ,  Hsin-Chang LEE ,  Chin-Hsiang LIN

IPC: G03F1/64

CPC classification number: G03F1/64

Abstract: A pellicle for an extreme ultraviolet (EUV) reflective mask includes a membrane attached to a frame. The membrane includes a plurality of nanotube bundles, each including a plurality of multi-wall nanotubes made of a first nanotube material and bonded together, and a plurality wrapping layers of a second nanotube material on the plurality of nanotube bundles, the second nanotube material being different from the first nanotube material. The pellicle advantageously has good EUV light transmittance, increased strength under EUV exposure environment, and thereby prolonged lifetime.

公开(公告)号：US20240302731A1

公开(公告)日：2024-09-12

申请号：US18658522

申请日：2024-05-08

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Pei-Cheng HSU ,  Ta-Cheng LIEN ,  Hsin-Chang LEE

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed over the substrate, a capping layer disposed over the reflective multilayer, an intermediate layer disposed over the capping layer, an absorber layer disposed over the intermediate layer, and a cover layer disposed over the absorber layer. The intermediate layer includes a material having a lower hydrogen diffusivity than a material of the capping layer.

公开(公告)号：US20240077804A1

公开(公告)日：2024-03-07

申请号：US17900937

申请日：2022-09-01

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Ping-Hsun LIN ,  Chien-Cheng CHEN ,  Shih Ju HUANG ,  Pei-Cheng HSU ,  Ta-Cheng LIEN ,  Hsin-Chang LEE

IPC: G03F7/20 ,  G03F1/44

CPC classification number: G03F7/70441 ,  G03F1/44

Abstract: A method includes forming a test pattern and a reference pattern in an absorption layer of a photomask structure. The test pattern has a first trench and a second trench, the reference pattern has a third trench and a fourth trench, the test pattern and the reference pattern have substantially the same dimension in a top view, and the second trench is deeper than the first trench, the third trench, and the fourth trench. The method further includes emitting a light beam to the test pattern to obtain a first interference pattern reflected from the test pattern, emitting the light beam to the reference pattern to obtain a second interference pattern reflected from the reference pattern; and comparing the first interference pattern with the second interference pattern to obtain a measured complex refractive index of the absorption layer.

公开(公告)号：US20240053676A1

公开(公告)日：2024-02-15

申请号：US17886053

申请日：2022-08-11

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chia Hao CHANG ,  Pei-Cheng HSU ,  Chih-Cheng CHEN ,  Huan-Ling LEE ,  Ting-Hao HSU ,  Hsin-Chang LEE

IPC: G03F1/62

CPC classification number: G03F1/62

Abstract: A method includes performing a lithography process using a mask and a pellicle membrane; detaching the pellicle membrane from the mask after the lithography process is completed; performing an inspection process to the pellicle membrane, the inspection process including generating a laser beam toward the pellicle membrane from a laser source, such that the laser beam passes through the pellicle membrane; and generating an image by receiving the laser beam passing through the pellicle membrane using an image sensor; and determining whether a particle is present on the pellicle membrane or a pin hole is present in the pellicle membrane based on the image.

公开(公告)号：US20230350283A1

公开(公告)日：2023-11-02

申请号：US18214348

申请日：2023-06-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Pei-Cheng HSU ,  Ching-Huang CHEN ,  Hung-Yi TSAI ,  Ming-Wei CHEN ,  Hsin-Chang LEE ,  Ta-Cheng LIEN

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes one or more alternating pairs of a first Cr based layer and a second Cr based layer different from the first Cr based layer.

公开(公告)号：US20230205072A1

公开(公告)日：2023-06-29

申请号：US18114848

申请日：2023-02-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Hung-Yi TSAI ,  Wei-Che HSIEH ,  Ta-Cheng LIEN ,  Hsin-Chang LEE ,  Ping-Hsun LIN ,  Hao-Ping CHENG ,  Ming-Wei CHEN ,  Szu-Ping TSAI

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes a base material made of one or more of a Cr based material, an Ir based material, a Pt based material, or Co based material, and further contains one or more additional elements selected from the group consisting of Si, B, Ge, Al, As, Sb, Te, Se and Bi.

公开(公告)号：US20220373876A1

公开(公告)日：2022-11-24

申请号：US17875255

申请日：2022-07-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Ching-Huang CHEN ,  Chi-Yuan SUN ,  Hua-Tai LIN ,  Hsin-Chang LEE ,  Ming-Wei CHEN

IPC: G03F1/24 ,  G03F1/54 ,  G03F1/80

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, a photo catalytic layer disposed on the capping layer, and an absorber layer disposed on the photo catalytic layer and carrying circuit patterns having openings. Part of the photo catalytic layer is exposed at the openings of the absorber layer, and the photo catalytic layer includes one selected from the group consisting of titanium oxide (TiO2), tin oxide (SnO), zinc oxide (ZnO) and cadmium sulfide (CdS).

公开(公告)号：US20220357661A1

公开(公告)日：2022-11-10

申请号：US17815041

申请日：2022-07-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Hsin-Chang LEE ,  Ping-Hsun LIN ,  Chih-Cheng LIN ,  Chia-Jen CHEN

IPC: G03F7/20

Abstract: A method of making a semiconductor device includes defining a pattern including a plurality of sub-patterns on the photomask in the pattern region based on the identifying information. The defining of the pattern includes defining a first sub-pattern of the plurality of sub-patterns having a first spacing from a second sub-pattern of the plurality of sub-patterns, wherein the first spacing is different from a second spacing between the second sub-pattern and a third sub-pattern of the plurality of sub-patterns, or rotating the first sub-pattern about an axis perpendicular to a top surface of the photomask relative to the second sub-pattern.