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公开(公告)号：US20220359392A1
公开(公告)日：2022-11-10
申请号：US17389141
申请日：2021-07-29
发明人： Fei Fan DUAN , Fong-yuan CHANG , Chi-Yu LU , Po-Hsiang HUANG , Chih-Liang CHEN
IPC分类号： H01L23/528 , H01L23/522 , G06F30/398
摘要： A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a first conductive pattern on a substrate, a second conductive pattern above the first conductive pattern, and a third conductive pattern above the first conductive pattern, all extending along a first direction. The first conductive pattern is electrically connected in parallel to the second conductive pattern and the third conductive pattern.
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公开(公告)号：US20240096800A1
公开(公告)日：2024-03-21
申请号：US18519513
申请日：2023-11-27
发明人： Fei Fan DUAN , Fong-yuan CHANG , Chi-Yu LU , Po-Hsiang HUANG , Chih-Liang CHEN
IPC分类号： H01L23/528 , G06F30/398 , H01L23/522
CPC分类号： H01L23/5283 , G06F30/398 , H01L23/5226 , G06F2119/12
摘要： A semiconductor device includes first and second active regions extending in parallel in a substrate, a plurality of conductive patterns, each conductive pattern of the plurality of conductive patterns extending on the substrate across each of the first and second active regions, and a plurality of metal lines, each metal line of the plurality of metal lines overlying and extending across each of the first and second active regions. Each conductive pattern of the plurality of conductive patterns is electrically connected in parallel with each metal line of the plurality of metal lines.
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3.发明公开公开(公告)号：US20230260985A1
公开(公告)日：2023-08-17
申请号：US17843770
申请日：2022-06-17
发明人： Shun Li CHEN , Fei Fan DUAN , Ting Yu CHEN
IPC分类号： H01L27/02 , H01L27/118 , H01L21/8234
CPC分类号： H01L27/0207 , H01L27/11807 , H01L21/823437
摘要： A filler cell region (in a semiconductor device) includes: gate segments, a majority of first ends of which substantially align with a first reference line that parallel and proximal to a top boundary of the filler cell region, and a majority of second ends of which substantially align with a second reference line that is parallel and proximal to a bottom boundary of the filler cell region. First and second gate segments extend continuously across the filler cell region; and third & fourth and fifth & sixth gate segments are correspondingly coaxial and separated by corresponding gate-gaps. Relative to the first direction: a first end of the first gate segment extends to the top boundary of the filler cell region; and a second end of the second gate segment extends to the bottom boundary of the filler cell region.
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