公开(公告)号：US20210118677A1

公开(公告)日：2021-04-22

申请号：US17117393

申请日：2020-12-10

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Guan-Yao TU ,  Yu-Yun PENG

IPC分类号： H01L21/02 ,  H01L29/49 ,  H01L29/51 ,  H01L23/10 ,  H01L29/08 ,  H01L29/66 ,  H01L29/78

摘要： A s semiconductor device structure is provided. The structure includes a semiconductor substrate and a gate stack over the semiconductor substrate. The structure also includes a spacer element extending along a sidewall of the gate stack. The spacer element has a first portion, a second portion, a third portion, and a fourth portion. Each of the first portion, the second portion, the third portion, and the fourth portion conformally extends along the sidewall of the gate stack. The second portion is sandwiched between the first portion and the third portion, and the third portion is sandwiched between the second portion and the fourth portion. Each of the first portion and the third portion has a first atomic concentration of carbon, and each of the second portion and the fourth portion has a second atomic concentration of carbon. The second atomic concentration of carbon is different than the first atomic concentration of carbon.

公开(公告)号：US20240355813A1

公开(公告)日：2024-10-24

申请号：US18761750

申请日：2024-07-02

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wen-Tzu CHEN ,  Szu-Ping TUNG ,  Guan-Yao TU ,  Hsiang-Ku SHEN ,  Chen-Chiu HUANG ,  Dian-Hau CHEN

IPC分类号： H01L27/06 ,  H01L21/762 ,  H01L27/02 ,  H01L29/06

CPC分类号： H01L27/0629 ,  H01L21/762 ,  H01L27/0207 ,  H01L29/0649

摘要： A semiconductor device includes a transistor structure disposed over a substrate, a first interlayer dielectric (ILD) layer disposed over the transistor structure, a second ILD layer disposed over the first ILD layer, and a first resistor wire disposed on the second ILD layer, and a second resistor wire disposed on the second ILD layer. A sheet resistance of the first resistor wire is different from a sheet resistance of the second resistor wire.

公开(公告)号：US20230037025A1

公开(公告)日：2023-02-02

申请号：US17575165

申请日：2022-01-13

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Wen-Tzu CHEN ,  Szu-Ping TUNG ,  Guan-Yao TU ,  Hsiang-Ku SHEN ,  Chen-Chiu HUANG ,  Dian-Hau CHEN

IPC分类号： H01L27/06 ,  H01L29/06 ,  H01L27/02 ,  H01L21/762

摘要： A semiconductor device includes a transistor structure disposed over a substrate, a first interlayer dielectric (ILD) layer disposed over the transistor structure, a second ILD layer disposed over the first ILD layer, and a first resistor wire disposed on the second ILD layer, and a second resistor wire disposed on the second ILD layer. A sheet resistance of the first resistor wire is different from a sheet resistance of the second resistor wire.

公开(公告)号：US20220336583A1

公开(公告)日：2022-10-20

申请号：US17479454

申请日：2021-09-20

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Guan-Yao TU ,  Su-Jen SUNG ,  Tze-Liang LEE ,  Hong-Wei CHAN

IPC分类号： H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L23/528 ,  H01L21/477 ,  H01L29/66

摘要： A method includes forming a transistor over a front side of a substrate; forming a front-side interconnect structure over the transistor, the front-side interconnect structure comprising layers of conductive lines, and conductive vias interconnecting the layers of conductive lines; forming a first bonding layer over the front-side interconnect structure; forming a second bonding layer over a carrier substrate; bonding the front-side interconnect structure to the carrier substrate by pressing the first bonding layer against the second bonding layer; and forming a backside interconnect structure over a backside of the substrate after bonding the front-side interconnect structure to the carrier substrate.

公开(公告)号：US20220328306A1

公开(公告)日：2022-10-13

申请号：US17853387

申请日：2022-06-29

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Guan-Yao TU ,  Yu-Yun PENG

IPC分类号： H01L21/02 ,  H01L29/49 ,  H01L29/51 ,  H01L23/10 ,  H01L29/08 ,  H01L29/66 ,  H01L29/78

摘要： A semiconductor device structure is provided. The structure includes a semiconductor substrate and a gate stack over the semiconductor substrate. The structure also includes a sealing element extending along a sidewall of the gate stack. The sealing element has a first atomic layer and a second atomic layer, and the first atomic layer and the second atomic layer have different atomic concentrations of carbon. The structure further includes a spacer element over the sealing element.