公开(公告)号：US20240353755A1

公开(公告)日：2024-10-24

申请号：US18137288

申请日：2023-04-20

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Shi-Cheng WANG ,  Cheng-Han Wu ,  Ching-Yu Chang ,  Ya-Ching Chang

IPC: G03F7/11 ,  G03F7/004 ,  H01L21/027 ,  H01L21/033

CPC classification number: G03F7/11 ,  G03F7/0042 ,  H01L21/0274 ,  H01L21/0337

Abstract: A method includes forming a metallic resist layer over a substrate and patterning the metallic resist layer to form a metallic resist pattern over the substrate. An etch resistant layer composition including an inorganic component, an organic component, or a combination thereof is formed over the metallic resist pattern to form an etch resistant layer.