公开(公告)号：US20230299175A1

公开(公告)日：2023-09-21

申请号：US17696257

申请日：2022-03-16

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Yi-Rui CHEN ,  Yi-Fan CHEN ,  Szu-Ying CHEN ,  Sen-Hong SYUE ,  Huicheng CHANG ,  Yee-Chia YEO

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L29/49 ,  H01L29/40

CPC分类号： H01L29/66545 ,  H01L21/02211 ,  H01L21/02323 ,  H01L21/02343 ,  H01L29/4983 ,  H01L29/401 ,  H01L21/0214 ,  H01L21/0228 ,  H01L21/02337 ,  H01L29/66795

摘要： A method of forming a semiconductor device includes forming a sacrificial gate structure over a substrate, depositing a spacer layer on the sacrificial gate structure in a conformal manner, performing a multi-step oxidation process to the spacer layer, etching the spacer layer to form gate sidewall spacers on opposite sidewalls of the sacrificial gate structure, removing the sacrificial gate structure to form a trench between the gate sidewalls spacers, and forming a metal gate structure in the trench.