公开(公告)号：US11869991B2

公开(公告)日：2024-01-09

申请号：US17189379

申请日：2021-03-02

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED

发明人： Chih-Tsung Shih ,  Hau-Yan Lu ,  Felix Tsui ,  Stefan Rusu ,  Chewn-Pu Jou

IPC分类号： H01L31/0232 ,  H01L31/18 ,  H01L31/0352

CPC分类号： H01L31/02327 ,  H01L31/035281 ,  H01L31/18

摘要： A semiconductor device is provided. The semiconductor device includes a waveguide over a first dielectric layer. A first portion of the waveguide has a first width and a second portion of the waveguide has a second width larger than the first width. The semiconductor device includes a first doped semiconductor structure and a second doped semiconductor structure. The second portion of the waveguide is between the first doped semiconductor structure and the second doped semiconductor structure.