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1.发明授权公开(公告)号：US11848390B2
公开(公告)日：2023-12-19
申请号：US17853998
申请日：2022-06-30
发明人： Chen-Hao Huang , Hau-Yan Lu , Sui-Ying Hsu , YuehYing Lee , Chien-Ying Wu , Chia-Ping Lai
IPC分类号： H01L31/0203 , H01L31/0312 , H01L31/18 , H01L31/103 , H01L31/105 , H01L31/0352
CPC分类号： H01L31/0203 , H01L31/0312 , H01L31/035281 , H01L31/105 , H01L31/1037 , H01L31/1812
摘要： At least one doped silicon region is formed in a silicon layer of a semiconductor substrate, and a silicon oxide layer is formed over the silicon layer. A germanium-containing material portion is formed in the semiconductor substrate to provide a p-n junction or a p-i-n junction including the germanium-containing material portion and one of the at least one doped silicon region. A capping material layer that is free of germanium is formed over the germanium-containing material portion. A first dielectric material layer is formed over the silicon oxide layer and the capping material layer. The first dielectric material layer includes a mesa region that is raised from the germanium-containing material portion by a thickness of the capping material layer. The capping material layer may be a silicon capping layer, or may be subsequently removed to form a cavity. Dark current is reduced for the germanium-containing material portion.
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公开(公告)号：US11869991B2
公开(公告)日：2024-01-09
申请号：US17189379
申请日：2021-03-02
发明人： Chih-Tsung Shih , Hau-Yan Lu , Felix Tsui , Stefan Rusu , Chewn-Pu Jou
IPC分类号： H01L31/0232 , H01L31/18 , H01L31/0352
CPC分类号： H01L31/02327 , H01L31/035281 , H01L31/18
摘要： A semiconductor device is provided. The semiconductor device includes a waveguide over a first dielectric layer. A first portion of the waveguide has a first width and a second portion of the waveguide has a second width larger than the first width. The semiconductor device includes a first doped semiconductor structure and a second doped semiconductor structure. The second portion of the waveguide is between the first doped semiconductor structure and the second doped semiconductor structure.
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3.发明授权公开(公告)号：US11532759B2
公开(公告)日：2022-12-20
申请号：US17159359
申请日：2021-01-27
发明人： Chen-Hao Huang , Hau-Yan Lu , Sui-Ying Hsu , Yuehying Lee , Chien-Ying Wu , Chia-Ping Lai
IPC分类号： H01L31/0203 , H01L31/0312 , H01L31/18 , H01L31/103 , H01L31/105 , H01L31/0352
摘要： At least one doped silicon region is formed in a silicon layer of a semiconductor substrate, and a silicon oxide layer is formed over the silicon layer. A germanium-containing material portion is formed in the semiconductor substrate to provide a p-n junction or a p-i-n junction including the germanium-containing material portion and one of the at least one doped silicon region. A capping material layer that is free of germanium is formed over the germanium-containing material portion. A first dielectric material layer is formed over the silicon oxide layer and the capping material layer. The first dielectric material layer includes a mesa region that is raised from the germanium-containing material portion by a thickness of the capping material layer. The capping material layer may be a silicon capping layer, or may be subsequently removed to form a cavity. Dark current is reduced for the germanium-containing material portion.
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4.发明公开公开(公告)号：US20240201458A1
公开(公告)日：2024-06-20
申请号：US18589180
申请日：2024-02-27
发明人： Chen-Hao Huang , Sui-Ying Hsu , YuehYing Lee , Chia-Ping Lai , Chien-Ying Wu , Hau-Yan Lu
IPC分类号： G02B6/42 , G02B6/12 , G02B6/136 , G02B6/30 , H01L21/306 , H01L21/3065 , H01L21/311 , H01L23/522 , H01L23/532 , H01L23/58
CPC分类号： G02B6/4248 , G02B6/12 , G02B6/12002 , G02B6/12004 , G02B6/136 , G02B6/4206 , G02B6/4274 , H01L23/53228 , G02B6/30 , G02B6/4228 , G02B6/4236 , H01L21/30604 , H01L21/3065 , H01L21/31116 , H01L23/5226 , H01L23/585
摘要： An optical integrated circuit (IC) structure includes: a substrate including a fiber slot formed in an upper surface of the substrate and extending from an edge of the substrate, and an undercut formed in the upper surface and extending from the fiber slot; a semiconductor layer disposed on the substrate; a dielectric structure disposed on the semiconductor layer; an interconnect structure disposed in the dielectric structure; a plurality of vents that extend through a coupling region of the dielectric structure and expose the undercut; a fiber cavity that extends through the coupling region of dielectric structure and exposes the fiber slot; and a barrier ring disposed in the dielectric structure, the barrier ring surrounding the interconnect structure and routed around the perimeter of the coupling region.
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公开(公告)号：US20230069212A1
公开(公告)日：2023-03-02
申请号：US17460789
申请日：2021-08-30
发明人： Chen-Hao HUANG , Hau-Yan Lu , Sui-Ying Hsu , Yuehying Lee , Chien-Ying Wu , Chia-Ping Lai
IPC分类号： G02B6/42 , H01L23/522 , H01L23/58 , H01L23/532 , H01L21/311 , H01L21/306 , H01L21/3065
摘要： An optical integrated circuit (IC) structure includes: a substrate including a fiber slot formed in an upper surface of the substrate and extending from an edge of the substrate, and an undercut formed in the upper surface and extending from the fiber slot; a semiconductor layer disposed on the substrate; a dielectric structure disposed on the semiconductor layer; an interconnect structure disposed in the dielectric structure; a plurality of vents that extend through a coupling region of the dielectric structure and expose the undercut; a fiber cavity that extends through the coupling region of dielectric structure and exposes the fiber slot; and a barrier ring disposed in the dielectric structure, the barrier ring surrounding the interconnect structure and routed around the perimeter of the coupling region.
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公开(公告)号：US11940659B2
公开(公告)日：2024-03-26
申请号：US17460789
申请日：2021-08-30
发明人： Chen-Hao Huang , Hau-Yan Lu , Sui-Ying Hsu , Yuehying Lee , Chien-Ying Wu , Chia-Ping Lai
IPC分类号： G02B6/12 , G02B6/136 , G02B6/30 , G02B6/42 , H01L23/532 , H01L21/306 , H01L21/3065 , H01L21/311 , H01L23/522 , H01L23/58
CPC分类号： G02B6/4248 , G02B6/12 , G02B6/12002 , G02B6/12004 , G02B6/136 , G02B6/4206 , G02B6/4274 , H01L23/53228 , G02B6/30 , G02B6/4228 , G02B6/4236 , H01L21/30604 , H01L21/3065 , H01L21/31116 , H01L23/5226 , H01L23/585
摘要： An optical integrated circuit (IC) structure includes: a substrate including a fiber slot formed in an upper surface of the substrate and extending from an edge of the substrate, and an undercut formed in the upper surface and extending from the fiber slot; a semiconductor layer disposed on the substrate; a dielectric structure disposed on the semiconductor layer; an interconnect structure disposed in the dielectric structure; a plurality of vents that extend through a coupling region of the dielectric structure and expose the undercut; a fiber cavity that extends through the coupling region of dielectric structure and exposes the fiber slot; and a barrier ring disposed in the dielectric structure, the barrier ring surrounding the interconnect structure and routed around the perimeter of the coupling region.
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