公开(公告)号：US11256114B2

公开(公告)日：2022-02-22

申请号：US16787976

申请日：2020-02-11

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED

Inventor： Yi-Chen Chen ,  Ming Chyi Liu ,  Shih-Wei Lin

IPC: G02B6/13 ,  G02B6/12 ,  G02F1/025 ,  F21V8/00

Abstract: A semiconductor device is provided. The semiconductor device includes a silicon nitride waveguide in a first dielectric layer over a substrate. The semiconductor device includes a semiconductor waveguide in a second dielectric layer over the first dielectric layer. The first dielectric layer including the silicon nitride waveguide is between the second dielectric layer including the semiconductor waveguide and the substrate.

公开(公告)号：US11921325B2

公开(公告)日：2024-03-05

申请号：US16802704

申请日：2020-02-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED

Inventor： Yi-Chen Chen ,  Lee-Chuan Tseng ,  Shih-Wei Lin

IPC: G02B6/132 ,  G02B6/12

CPC classification number: G02B6/132 ,  G02B2006/12121 ,  G02B2006/12138 ,  G02B2006/12142

Abstract: A semiconductor device is provided. The semiconductor device includes a waveguide over a substrate. The semiconductor device includes a first dielectric structure over the substrate, wherein a portion of the waveguide is in the first dielectric structure. The semiconductor device includes a second dielectric structure under the waveguide, wherein a first sidewall of the second dielectric structure is adjacent a first sidewall of the substrate.

公开(公告)号：US11675129B2

公开(公告)日：2023-06-13

申请号：US17874453

申请日：2022-07-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED

Inventor： Yi-Chen Chen ,  Lee-Chuan Tseng ,  Shih-Wei Lin

IPC: G02B6/132 ,  G02B6/12

CPC classification number: G02B6/132 ,  G02B2006/12121 ,  G02B2006/12138 ,  G02B2006/12142

Abstract: A semiconductor device is provided. The semiconductor device includes a waveguide over a substrate. The semiconductor device includes a first dielectric structure over the substrate, wherein a portion of the waveguide is in the first dielectric structure. The semiconductor device includes a second dielectric structure under the waveguide, wherein a first sidewall of the second dielectric structure is adjacent a first sidewall of the substrate.

公开(公告)号：US20210247633A1

公开(公告)日：2021-08-12

申请号：US16787976

申请日：2020-02-11

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED

Inventor： Yi-Chen Chen ,  Ming Chyi Liu ,  Shih-Wei Lin

IPC: G02F1/025

Abstract: A semiconductor device is provided. The semiconductor device includes a silicon nitride waveguide in a first dielectric layer over a substrate. The semiconductor device includes a semiconductor waveguide in a second dielectric layer over the first dielectric layer. The first dielectric layer including the silicon nitride waveguide is between the second dielectric layer including the semiconductor waveguide and the substrate.