公开(公告)号：US20220328755A1

公开(公告)日：2022-10-13

申请号：US17809573

申请日：2022-06-29

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： YU-FENG YIN ,  TAI-YEN PENG ,  AN-SHEN CHANG ,  HAN-TING TSAI ,  QIANG FU ,  CHUNG-TE LIN

IPC分类号： H01L43/02 ,  H01L21/768 ,  H01L23/522 ,  H01L43/12

摘要： The present disclosure provides a semiconductor structure, including a first metal line over a first region of the substrate, a first magnetic tunnel junction (MTJ) and a second MTJ over the first region of the substrate, and a top electrode extending over the first MTJ and the second MTJ, wherein the top electrode includes a protruding portion at a bottom surface of the top electrode.

公开(公告)号：US20220069201A1

公开(公告)日：2022-03-03

申请号：US17008000

申请日：2020-08-31

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： YU-FENG YIN ,  TAI-YEN PENG ,  AN-SHEN CHANG ,  HAN-TING TSAI ,  QIANG FU ,  CHUNG-TE LIN

IPC分类号： H01L43/02 ,  H01L43/12 ,  H01L23/522 ,  H01L21/768

摘要： The present disclosure provides a semiconductor structure, including a substrate, including a first region and a second region adjacent to the first region, a magnetic tunnel junction (MTJ) over the first region, a spacer on a sidewall of the MTJ, a hard mask over the MTJ, a first dielectric layer laterally surrounding the spacer and the hard mask, a top electrode over the hard mask, and an etch stop stack laterally surrounding the top electrode.