公开(公告)号：US20220020916A1

公开(公告)日：2022-01-20

申请号：US16932639

申请日：2020-07-17

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： CHANG-LIN YANG ,  CHUNG-TE LIN ,  HAN-TING TSAI ,  CHIEN-HUA HUANG

IPC分类号： H01L43/02 ,  H01L27/22 ,  H01L43/12

摘要： An integrated circuit includes a substrate, a dielectric layer over the substrate, a plurality of cells, a plurality of spacers and a plurality of conductive particles. Each of the cells includes a bottom portion in the dielectric layer and an upper portion protruding from the dielectric layer. The spacers are disposed over the dielectric layer and partially cover the upper portions of the cells, respectively. The spacers are disconnected from each other, and cover a first area of the dielectric layer and expose a second area of the dielectric layer. The conductive particles are disposed between the first area of the dielectric layer and the spacers.