SEMICONDUCTOR IMAGE SENSOR
    2.
    发明申请

    公开(公告)号:US20210020670A1

    公开(公告)日:2021-01-21

    申请号:US17039614

    申请日:2020-09-30

    IPC分类号: H01L27/146

    摘要: A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a plurality of pixel sensors, an isolation grid disposed in the substrate and separating the plurality of pixel sensors from each other, a reflective grid disposed over the isolation grid on the back side of the substrate, an a low-n grid disposed over the back side of the substrate and overlapping the reflective grid from a top view. A width of the low-n grid is greater than a width of the reflective grid.