公开(公告)号：US10319719B2

公开(公告)日：2019-06-11

申请号：US15589157

申请日：2017-05-08

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Chen-Yi Lee ,  Shih-Fen Huang ,  Pei-Lun Wang ,  Dah-Chuen Ho ,  Yu-Chang Jong ,  Mohammad Al-Shyoukh ,  Alexander Kalnitsky

IPC分类号： G05F3/08 ,  G05F3/24 ,  H01L27/02 ,  H01L29/49 ,  H01L29/78 ,  H01L27/088 ,  H01L27/092 ,  H01L21/8234 ,  H01L21/8238

摘要： A semiconductor device includes a first a first transistor configured to operate at a first threshold voltage level. The first transistor includes a first gate structure and a first drain terminal electrically coupled to the first gate structure. The semiconductor device also includes a second transistor configured to operate at a second threshold voltage level different from the first threshold voltage level. The second transistor includes a second source terminal and a second gate structure electrically coupled to the first gate structure. The first gate structure and the second gate structure comprise a first component in common, and the second gate structure further includes at least one extra component disposed over the first component. The number of the at least one extra component is determined by a desired voltage difference between the first threshold voltage level and the second threshold voltage level.

公开(公告)号：US09666574B1

公开(公告)日：2017-05-30

申请号：US14954011

申请日：2015-11-30

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Chen-Yi Lee ,  Shih-Fen Huang ,  Pei-Lun Wang ,  Dah-Chuen Ho ,  Yu-Chang Jong ,  Mohammad Al-Shyoukh ,  Alexander Kalnitsky

IPC分类号： H01L21/82 ,  H01L27/02 ,  H01L29/78 ,  H01L27/092 ,  H01L21/8238 ,  H01L29/49

CPC分类号： H01L27/0883 ,  G05F3/08 ,  H01L21/82345 ,  H01L21/823885 ,  H01L27/0222 ,  H01L27/0922 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/785

摘要： Some embodiments of the present disclosure provide a semiconductor device. The semiconductor device includes a first transistor configured to include a first threshold voltage level. The first transistor includes a gate structure. The gate structure includes a first component including a first conductive type. A second transistor configures to include a second threshold voltage level different from the first threshold voltage level. The second transistor includes a gate structure. The gate structure includes a second component including the first conductive type. At least one extra component is disposed over the second component. The least one extra component includes a second conductive type opposite to the first conductive type. The first transistor and the second transistor are coupled such that the number of the least one extra component is determined by a desired voltage difference between the first threshold voltage level and the second threshold voltage level.