公开(公告)号：US20240096917A1

公开(公告)日：2024-03-21

申请号：US18150798

申请日：2023-01-06

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： PO CHUN CHANG ,  PING-HAO LIN ,  WEI-LIN CHEN ,  KUN-HUI LIN ,  KUO-CHENG LEE

IPC: H01L27/146

CPC classification number: H01L27/14629 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14685

Abstract: An image sensor structure includes a semiconductor substrate, a plurality of image sensing elements, a reflective element, and a high-k dielectric structure. The image sensing elements are in the semiconductor substrate. The reflective element is in the semiconductor substrate and between the image sensing elements. The high-k dielectric structure is between the reflective element and the image sensing elements.