公开(公告)号：US20240036294A1

公开(公告)日：2024-02-01

申请号：US17815909

申请日：2022-07-28

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： WEI-LIN CHEN ,  CHING-CHUNG SU ,  JUNG-HUEI PENG ,  CHUN-WEN CHENG ,  CHUN-HAO CHOU ,  KUO-CHENG LEE

IPC: G02B13/00 ,  B29D11/00

CPC classification number: G02B13/0075 ,  G02B13/006 ,  B29D11/00817 ,  G01J1/0411

Abstract: An optical device includes a substrate, a first electrode, a second electrode, and a first lens. The first electrode and the second electrode are over the substrate and configured to generate a first electric field. The first lens is between the first electrode and the second electrode and has a focal length that varies in response to the first electric field applied to the first lens.

公开(公告)号：US20240047495A1

公开(公告)日：2024-02-08

申请号：US17818266

申请日：2022-08-08

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： WEI-LIN CHEN ,  CHUN-HAO CHOU ,  KUO-CHENG LEE

IPC: H01L27/146

CPC classification number: H01L27/14627 ,  H01L27/14649

Abstract: A semiconductor image-sensing structure includes a semiconductor substrate having a front side and a back side, a photo-sensing element disposed in the semiconductor substrate, a color filter disposed over the back side of the semiconductor substrate, and an electric-optical modulator disposed between the color filter and the photo-sensing element. The electric-optical modulator includes a first electrode, a second electrode over the first electrode, and a micro-lens between the first electrode and the second electrode.

公开(公告)号：US20240096917A1

公开(公告)日：2024-03-21

申请号：US18150798

申请日：2023-01-06

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： PO CHUN CHANG ,  PING-HAO LIN ,  WEI-LIN CHEN ,  KUN-HUI LIN ,  KUO-CHENG LEE

IPC: H01L27/146

CPC classification number: H01L27/14629 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14685

Abstract: An image sensor structure includes a semiconductor substrate, a plurality of image sensing elements, a reflective element, and a high-k dielectric structure. The image sensing elements are in the semiconductor substrate. The reflective element is in the semiconductor substrate and between the image sensing elements. The high-k dielectric structure is between the reflective element and the image sensing elements.

公开(公告)号：US20240030256A1

公开(公告)日：2024-01-25

申请号：US17813947

申请日：2022-07-21

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： WEI-LIN CHEN ,  YU-CHENG TSAI ,  CHUN-HAO CHOU ,  KUO-CHENG LEE

IPC: H01L27/146

CPC classification number: H01L27/14629 ,  H01L27/14649 ,  H01L27/1464 ,  H01L27/14614

Abstract: A semiconductor image sensing structure includes a semiconductor substrate having a front side and a back side, a pixel sensor disposed in the semiconductor substrate, a transistor disposed over the front side of the semiconductor substrate, and a reflective structure disposed over the front side of the semiconductor substrate. A gate structure of the transistor and the reflective structure include a same material. A top surface of the gate structure of the transistor and a top surface of the reflective structure are aligned with each other.