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公开(公告)号：US20250008244A1
公开(公告)日：2025-01-02
申请号：US18344807
申请日：2023-06-29
Inventor： MING-HSIEN YANG , CHIA-YU WEI , CHUN-HAO CHOU , KUO-CHENG LEE , CHUNG-LIANG CHENG , SHENG-CHAU CHEN
IPC: H04N25/79
Abstract: A stacked CMOS image sensor (CIS) structure is provided. The stacked CIS structure comprises a first die, a second die and a third die. The first die comprises a photodiode, a transfer gate, a selective conversion gain (SCG) switch, a reset switch, a floating node diffusion capacitor and a SCG diffusion capacitor. The second die comprises a source follower transistor and a row select switch. The third die comprises an image sensing circuit electrically connected to the third floating node.
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公开(公告)号：US20240036294A1
公开(公告)日：2024-02-01
申请号：US17815909
申请日：2022-07-28
Inventor： WEI-LIN CHEN , CHING-CHUNG SU , JUNG-HUEI PENG , CHUN-WEN CHENG , CHUN-HAO CHOU , KUO-CHENG LEE
CPC classification number: G02B13/0075 , G02B13/006 , B29D11/00817 , G01J1/0411
Abstract: An optical device includes a substrate, a first electrode, a second electrode, and a first lens. The first electrode and the second electrode are over the substrate and configured to generate a first electric field. The first lens is between the first electrode and the second electrode and has a focal length that varies in response to the first electric field applied to the first lens.
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公开(公告)号：US20230275109A1
公开(公告)日：2023-08-31
申请号：US17587262
申请日：2022-01-28
Inventor： MING-HSIEN YANG , WEN-I HSU , KUAN-FU LU , FENG-CHI HUNG , JEN-CHENG LIU , DUN-NIAN YAUNG , CHUN-HAO CHOU , KUO-CHENG LEE
IPC: H01L27/146
CPC classification number: H01L27/14623 , H01L27/14685 , H01L27/14605 , H01L27/14621 , H01L27/14645
Abstract: A semiconductor image sensing structure includes a substrate having a first region and a second region, a metal grid in the first region, and a hybrid metal shield in the second region. The hybrid metal shield includes a first metallization layer, a second metallization layer disposed over the first metallization layer, a third metallization layer disposed over the second metallization layer, and a fourth metallization layer disposed over the third metallization layer. An included angle of the second metallization layer is between approximately 40° and approximately 60°.
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公开(公告)号：US20240096923A1
公开(公告)日：2024-03-21
申请号：US18150806
申请日：2023-01-06
Inventor： FENG-CHIEN HSIEH , YUN-WEI CHENG , WEI-LI HU , KUO-CHENG LEE , CHENG-MING WU
IPC: H01L27/146
CPC classification number: H01L27/14643 , H01L27/14607 , H01L27/14689
Abstract: The image sensing structure includes a first semiconductor device and a second semiconductor device. The first semiconductor device includes at least one first unit. The at least one first unit includes a plurality of first interconnects adjacent to the top side of the first semiconductor device, a row selector, and an analog-to-digital converter (ADC) connected to the row selectors. The second semiconductor device includes at least one second unit. The at least one second unit includes a photodiode facing the top side of the second semiconductor device. The photodiode is configured to receive the light incident on the top side of the second semiconductor device. The top side of the first semiconductor device is bonded to the bottom side of the second semiconductor device.
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公开(公告)号：US20160343752A1
公开(公告)日：2016-11-24
申请号：US14854672
申请日：2015-09-15
Inventor： TSUNG-HAN TSAI , YUN-WEI CHENG , CHUN-HAO CHOU , KUO-CHENG LEE , YUNG-LUNG HSU , HSIN-CHI CHEN
IPC: H01L27/146
CPC classification number: H01L27/1464 , H01L27/14614 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14638 , H01L27/14643 , H01L27/14689
Abstract: A backside illuminated (BSI) image sensor comprises a semiconductor substrate having a first surface and a second surface opposite to the first surface; a photosensitive element in the semiconductor substrate; a gate structure partially over the first surface of the semiconductor substrate; and a temporary carrier depository in proximity to the first surface of the semiconductor substrate, wherein the gate structure has a plug portion extending from the first surface toward the second surface. The plug portion of the gate structure helps to increase the charge transfer efficiency so as to improve quantum efficiency of the BSI image sensor.
Abstract translation: 背面照明（BSI）图像传感器包括具有第一表面和与第一表面相对的第二表面的半导体衬底; 半导体衬底中的感光元件; 位于半导体衬底的第一表面上的栅极结构; 以及靠近所述半导体衬底的第一表面的临时载体托架，其中所述栅极结构具有从所述第一表面延伸到所述第二表面的插塞部分。 门结构的插头部分有助于提高电荷转移效率，从而提高BSI图像传感器的量子效率。
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Patent Agency Ranking
公开(公告)号：US20160148970A1
公开(公告)日：2016-05-26
申请号：US14554649
申请日：2014-11-26
Inventor： YUN-WEI CHENG , TSUNG-HAN TSAI , CHUN-HAO CHOU , KUO-CHENG LEE , VOLUME CHIEN , YUNG-LUNG HSU
IPC: H01L27/146
CPC classification number: H01L27/14645 , H01L27/14612 , H01L27/14621 , H01L27/1463 , H01L27/1464 , H01L27/14685 , H01L27/14689
Abstract: Some embodiments of the present disclosure provide a method of manufacturing a back side illuminated (BSI) image sensor. The method includes receiving a semiconductive substrate; forming a photosensitive element at a front side of the semiconductive substrate; forming a transistor coupled to the photosensitive element; forming a recess at a back side of the semiconductive substrate; forming a first dielectric layer lining to a side portion of the recess and over the back side of the semiconductor substrate; covering a conductive material over the first dielectric layer and filling in the recess; forming a conductive column on top of the recess by patterning the conductive material; and forming a second dielectric layer covering the conductive column and the first dielectric layer.
Abstract translation: 本公开的一些实施例提供制造背面照明（BSI）图像传感器的方法。 该方法包括接收半导体衬底; 在半导体基板的前侧形成感光元件; 形成耦合到所述感光元件的晶体管; 在所述半导体基板的背面形成凹部; 在所述凹部的侧部和所述半导体衬底的背面上形成衬里的第一电介质层; 覆盖所述第一电介质层上的导电材料并填充在所述凹部中; 通过图案化导电材料在凹部的顶部上形成导电柱; 以及形成覆盖所述导电柱和所述第一介电层的第二介电层。
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公开(公告)号：US20240088193A1
公开(公告)日：2024-03-14
申请号：US18154017
申请日：2023-01-12
Inventor： CHUN-LIANG LU , CHUN-HAO CHOU , KUO-CHENG LEE
IPC: H01L27/146
CPC classification number: H01L27/14645 , H01L27/14689
Abstract: A semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device comprises a substrate and a wafer disposed on the substrate. The wafer includes a p-doped layer disposed on the substrate; a first diode disposed on the p-doped layer; a second diode disposed on the p-doped layer; a third diode disposed on the p-doped layer; and a dielectric layer disposed on the substrate and covering the first, second, and third diodes. The first, second, and third diodes are disposed side by side.
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公开(公告)号：US20240047495A1
公开(公告)日：2024-02-08
申请号：US17818266
申请日：2022-08-08
Inventor： WEI-LIN CHEN , CHUN-HAO CHOU , KUO-CHENG LEE
IPC: H01L27/146
CPC classification number: H01L27/14627 , H01L27/14649
Abstract: A semiconductor image-sensing structure includes a semiconductor substrate having a front side and a back side, a photo-sensing element disposed in the semiconductor substrate, a color filter disposed over the back side of the semiconductor substrate, and an electric-optical modulator disposed between the color filter and the photo-sensing element. The electric-optical modulator includes a first electrode, a second electrode over the first electrode, and a micro-lens between the first electrode and the second electrode.
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公开(公告)号：US20160056196A1
公开(公告)日：2016-02-25
申请号：US14464035
申请日：2014-08-20
Inventor： CHENG-YUAN LI , KUN-HUEI LIN , CHUN-HAO CHOU , KUO-CHENG LEE , YUNG-LUNG HSU
IPC: H01L27/146 , H01L31/02
CPC classification number: H01L27/14636 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14634 , H01L27/1464 , H01L27/1469 , H01L31/02002
Abstract: A semiconductor device includes a first semiconductor chip comprising a first metallic structure and a second semiconductor chip comprising a second metallic structure. The second semiconductor chip is bonded with the first semiconductor chip by a first conductive plug. A second conductive plug extends from the first metallic structure and into a substrate of the first semiconductor chip. The first conductive plug connects the first metallic structure and the second metallic structure, wherein a conductive liner is along a sidewall of the first conductive plug or the second conductive plug.
Abstract translation: 半导体器件包括包括第一金属结构的第一半导体芯片和包括第二金属结构的第二半导体芯片。 第二半导体芯片通过第一导电插塞与第一半导体芯片接合。 第二导电插塞从第一金属结构延伸到第一半导体芯片的衬底中。 第一导电插头连接第一金属结构和第二金属结构，其中导电衬垫沿着第一导电插塞或第二导电插塞的侧壁。
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公开(公告)号：US20240113237A1
公开(公告)日：2024-04-04
申请号：US18152172
申请日：2023-01-10
Inventor： FENG-CHIEN HSIEH , YUN-WEI CHENG , KUO-CHENG LEE , CHENG-MING WU , PING KUAN CHANG
IPC: H01L31/02 , H01L25/18 , H01L31/053 , H01L31/18
CPC classification number: H01L31/02008 , H01L25/18 , H01L31/02021 , H01L31/053 , H01L31/18
Abstract: The present disclosure provides a semiconductor structure and a method of manufacturing the same. The semiconductor structure includes a sensing device, a solar cell, and an interconnecting structure. The solar cell is disposed above the sensing device and is electrically connected to the sensing device. The interconnecting structure is disposed between the sensing device and the solar cell and has a first surface facing the solar cell and a second surface facing the sensing devices. The interconnecting structure comprises a first energy storage component and a second energy storage component. The first energy storage component is disposed closer to the first surface of the interconnecting structure than the second energy storage component.
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