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公开(公告)号：US11050408B2
公开(公告)日：2021-06-29
申请号：US16510568
申请日：2019-07-12
摘要： An acoustic wave device includes: a first substrate that has a first surface and a second surface, the second surface being an opposite surface of the first substrate from the first surface; an acoustic wave element that is located on the first surface; a wiring portion that electrically connects the acoustic wave element and a metal portion through a through hole, the metal portion being located on the second surface, the through hole penetrating through the first substrate; and a sealing portion that is located on the first surface so as to surround the acoustic wave element, overlaps with at least a part of the through hole in plan view, and seals the acoustic wave element in an air gap.
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公开(公告)号：US11962282B2
公开(公告)日：2024-04-16
申请号：US17323598
申请日：2021-05-18
发明人： Shinji Yamamoto , Toshio Nishizawa , Naoki Kakita
CPC分类号： H03H9/02102 , H03H9/0504 , H03H9/132 , H03H9/17 , H03H9/54
摘要： An acoustic wave device including a support substrate, a piezoelectric layer provided over the support substrate, at least one pair of comb-shaped electrodes disposed on the piezoelectric layer, each of the at least one pair of comb-shaped electrodes including electrode fingers, a temperature compensation film interposed between the support substrate and the piezoelectric layer, the temperature compensation film having a temperature coefficient of elastic constant opposite in sign to a temperature coefficient of elastic constant of the piezoelectric layer; and an insulating layer interposed between the support substrate and the temperature compensation film, a first surface of the insulating layer having first protruding portions and/or first recessed portions, a second surface of the insulating layer having second protruding portions and/or second recessed portions, the first surface being closer to the support substrate, the second surface being closer to the temperature compensation film.
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公开(公告)号：US10250223B2
公开(公告)日：2019-04-02
申请号：US15451684
申请日：2017-03-07
发明人： Tomoyuki Kurihara , Kazushige Hatakeyama , Takuma Kuroyanagi , Yohei Shimizu , Masahiro Sato , Naoki Kakita , Kazutaka Suzuki
摘要： An acoustic wave device includes: a first substrate including a support substrate and a piezoelectric substrate bonded on an upper surface of the support substrate, and including a first acoustic wave element located on an upper surface of the piezoelectric substrate; a ring-shaped metal layer located in a region that surrounds the first acoustic wave element and in which the piezoelectric substrate is removed, a second substrate flip-chip mounted on an upper surface of the first substrate and including a functional element located on a lower surface of the second substrate; and a metallic member located on an upper surface of the ring-shaped metal layer, surrounding the second substrate in plan view, not located between the first substrate and the second substrate, and sealing the first acoustic wave element and the functional element so that the first acoustic wave element and the functional element are located across an air gap.
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公开(公告)号：US11664784B2
公开(公告)日：2023-05-30
申请号：US16903247
申请日：2020-06-16
发明人： Naoki Kakita , Hitoshi Tsukidate
IPC分类号： H03H9/25 , H03H9/02 , H01L41/312
CPC分类号： H03H9/25 , H01L41/312 , H03H9/02574
摘要： An acoustic wave device includes: a piezoelectric substrate bonded on a support substrate, a surface including protruding portions and/or recessed portions being interposed between the piezoelectric substrate and the support substrate; a first acoustic wave resonator that includes first electrode fingers with a first average pitch and is disposed on the piezoelectric substrate in a first region where an average interval between the protruding portions and/or the recessed portions in a direction in which the first electrode fingers are arranged is a first interval; and a second acoustic wave resonator that includes second electrode fingers with a second average pitch different from the first average pitch, and is disposed on the piezoelectric substrate in a second region where an average interval between the protruding portions and/or the recessed portions in a direction in which the second electrode fingers are arranged is a second interval different from the first interval.
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公开(公告)号：US11595019B2
公开(公告)日：2023-02-28
申请号：US16375512
申请日：2019-04-04
发明人： Naoki Kakita , Osamu Kawachi , Rei Oikawa
IPC分类号： H03H9/02 , H01L41/047 , H01L41/08 , H01L41/083 , H03H3/08 , H01L41/312
摘要： An acoustic wave resonator includes: a support substrate; a piezoelectric substrate located on the support substrate; a first amorphous layer that is in contact with the support substrate and is mainly composed of one or more constituent elements of the support substrate; a second amorphous layer that is in contact with the piezoelectric substrate and the first amorphous layer, is mainly composed of one or more constituent elements of the piezoelectric substrate, and is thinner than the first amorphous layer; and a pair of comb-shaped electrodes that is located on an opposite surface of the piezoelectric substrate from the support substrate, each of the pair of comb-shaped electrodes including electrode fingers.
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公开(公告)号：US10396757B2
公开(公告)日：2019-08-27
申请号：US15454951
申请日：2017-03-09
发明人： Naoki Kakita , Takuma Kuroyanagi
IPC分类号： H03H9/00 , H03H9/145 , H03H9/64 , H01L23/522 , H01L23/528 , H01L23/532 , H03H9/05 , H03H9/72
摘要： An acoustic wave device includes: a first piezoelectric substrate; a first IDT that includes a plurality of first electrode fingers and is located on a first surface of the first piezoelectric substrate; a second piezoelectric substrate that is located above the first surface; and a second IDT that is located on a second surface of the second piezoelectric substrate, and includes a plurality of second electrode fingers that are non-parallel to the plurality of first electrode fingers, the second surface of the second piezoelectric substrate facing the first surface across an air gap.
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