公开(公告)号：US20220056611A1

公开(公告)日：2022-02-24

申请号：US17299695

申请日：2019-12-03

Applicant: TDK CORPORATION

Inventor： Katsumi KAWASAKI ,  Jun HIRABAYASHI ,  Minoru FUJITA ,  Daisuke INOKUCHI ,  Jun ARIMA ,  Makio KONDO

IPC: C30B11/00 ,  C30B29/16

Abstract: A crucible for growing a single-crystal in which a raw material melt for growing the single-crystal is solidified while being accommodated includes a side wall part configured to surround the raw material melt and a bottom part configured to support the raw material melt while being continuous with the side wall part, in which the side wall part has circumferential length redundancy inside the side wall part in a cross-sectional view. The side wall part has a portion where the circumference length is redundant inside any portion in the cross-sectional view, and when the crucible for growing a single-crystal is cooled in a cooling process after the single-crystal growth, the portion where the circumference length is redundant inside in the cross-sectional view is expanded to an outside of the crucible for growing a single-crystal.

公开(公告)号：US20210017668A1

公开(公告)日：2021-01-21

申请号：US16982280

申请日：2019-01-25

Applicant: TDK CORPORATION

Inventor： Katsumi KAWASAKI ,  Jun HIRABAYASHI ,  Minoru FUJITA ,  Daisuke INOKUCHI ,  Jun ARIMA ,  Makio KONDO

IPC: C30B15/34 ,  C30B29/16

Abstract: A die for EFG-based single crystal growth includes a lower surface to be immersed into a raw material melt with an impurity added, a rectangular upper surface facing a seed crystal and having a long side and a short side, and a plurality of slit sections extending from the lower surface to the upper surface and causing the raw material melt to ascend from the lower surface to the upper surface. Respective longitudinal directions of openings of the plurality of slit sections on the upper surface are parallel to one another and non-parallel to the long side of the upper surface.

公开(公告)号：US20200287060A1

公开(公告)日：2020-09-10

申请号：US16646074

申请日：2018-08-30

Applicant: TDK Corporation

Inventor： Jun ARIMA ,  Jun HIRABAYASHI ,  Minoru FUJITA ,  Katsumi KAWASAKI ,  Daisuke INOKUCHI

IPC: H01L29/872 ,  H01L29/24

Abstract: An object of the present invention is to provide a Schottky barrier diode which is less likely to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode includes a semiconductor substrate 20 made of gallium oxide, a drift layer 30 made of gallium oxide and provided on the semiconductor substrate 20, an anode electrode 40 brought into Schottky contact with the drift layer 30, and a cathode electrode 50 brought into ohmic contact with the semiconductor substrate 20. The drift layer 30 has an outer peripheral trench 10 formed at a position surrounding the anode electrode 40 in a plan view. An electric field is dispersed by the presence of the outer peripheral trench 10 formed in the drift layer 30. This alleviates concentration of the electric field on the corner of the anode electrode 40, making it unlikely to cause dielectric breakdown.