公开(公告)号：US20210119062A1

公开(公告)日：2021-04-22

申请号：US17041127

申请日：2019-03-11

Applicant: TDK Corporation ,  TAMURA CORPORATION ,  Novel Crystal Technology, Inc.

Inventor： Jun ARIMA ,  Minoru FUJITA ,  Jun HIRABAYASHI ,  Kohei SASAKI

IPC: H01L29/872 ,  H01L29/06 ,  H01L29/24 ,  H01L29/41 ,  H01L29/47 ,  H01L29/66

Abstract: An object of the present invention is to provide a Schottky barrier diode less apt to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode includes a semiconductor substrate 20 made of gallium oxide, a drift layer 30 made of gallium oxide and provided on the semiconductor substrate 20, an anode electrode 40 brought into Schottky contact with the drift layer 30, and a cathode electrode 50 brought into ohmic contact with the semiconductor substrate 20. The drift layer 30 has an outer peripheral trench 10 that surrounds the anode electrode 40 in a plan view, and the outer peripheral trench 10 is filled with a semiconductor material 11 having a conductivity type opposite to that of the drift layer 30. An electric field is dispersed by the presence of the thus configured outer peripheral trench 10. This alleviates electric field concentration on the corner of the anode electrode 40, making it less apt to cause dielectric breakdown.

公开(公告)号：US20210020789A1

公开(公告)日：2021-01-21

申请号：US16977190

申请日：2019-02-25

Applicant: TAMURA CORPORATION ,  Novel Crystal Technology, Inc. ,  TDK Corporation

Inventor： Kohei SASAKI ,  Minoru FUJITA ,  Jun HIRABAYASHI ,  Jun ARIMA

IPC: H01L29/872 ,  H01L29/47 ,  H01L29/66 ,  H01L21/311 ,  H01L29/423

Abstract: A trench MOS Schottky diode includes a first semiconductor layer including a Ga2O3-based single crystal, a second semiconductor layer that is a layer stacked on the first semiconductor layer, includes a Ga2O3-based single crystal, and includes a trench opened on a surface thereof opposite to the first semiconductor layer, an anode electrode formed on the surface of the second semiconductor layer, a cathode electrode formed on a surface of the first semiconductor layer, an insulating film covering the inner surface of the trench of the second semiconductor layer, and a trench electrode that is buried in the trench of the second semiconductor layer so as to be covered with the insulating film and is in contact with the anode electrode. The second semiconductor layer includes an insulating dry-etching-damaged layer with a thickness of not more than 0.8 μm in a region including the inner surface of the trench.

公开(公告)号：US20210017668A1

公开(公告)日：2021-01-21

申请号：US16982280

申请日：2019-01-25

Applicant: TDK CORPORATION

Inventor： Katsumi KAWASAKI ,  Jun HIRABAYASHI ,  Minoru FUJITA ,  Daisuke INOKUCHI ,  Jun ARIMA ,  Makio KONDO

IPC: C30B15/34 ,  C30B29/16

Abstract: A die for EFG-based single crystal growth includes a lower surface to be immersed into a raw material melt with an impurity added, a rectangular upper surface facing a seed crystal and having a long side and a short side, and a plurality of slit sections extending from the lower surface to the upper surface and causing the raw material melt to ascend from the lower surface to the upper surface. Respective longitudinal directions of openings of the plurality of slit sections on the upper surface are parallel to one another and non-parallel to the long side of the upper surface.

公开(公告)号：US20250081485A1

公开(公告)日：2025-03-06

申请号：US18891242

申请日：2024-09-20

Applicant: TDK CORPORATION

Inventor： Jun ARIMA ,  Minoru FUJITA ,  Katsumi KAWASAKI ,  Jun HIRABAYASHI

IPC: H01L29/872 ,  H01L29/24

Abstract: Disclosed herein is a junction barrier Schottky diode that includes a semiconductor substrate, a drift layer provided on the semiconductor substrate, an anode electrode and a p-type semiconductor layer each contacting the drift layer, an n-type semiconductor layer contacting the anode electrode and the drift layer, a metal layer provided between the n-type semiconductor layer and the p-type semiconductor layer, and a cathode electrode contacting the semiconductor substrate.

公开(公告)号：US20210167225A1

公开(公告)日：2021-06-03

申请号：US16758790

申请日：2018-09-26

Applicant: TDK Corporation ,  TAMURA CORPORATION ,  Novel Crystal Technology, Inc.

Inventor： Jun ARIMA ,  Jun HIRABAYASHI ,  Minoru FUJITA ,  Kohei SASAKI

IPC: H01L29/872 ,  H01L29/06 ,  H01L29/24

Abstract: A Schottky barrier diode includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and provided on the semiconductor substrate, an anode electrode brought into Schottky contact with the drift layer, and a cathode electrode brought into ohmic contact with the semiconductor substrate. The drift layer has a plurality of trenches formed in a position overlapping the anode electrode in a plan view. Among the plurality of trenches, a trench positioned at the end portion has a selectively increased width. Thus, the curvature radius of the bottom portion of the trench is increased, or an edge part constituted by the bottom portion as viewed in a cross section is divided into two parts. As a result, an electric field to be applied to the bottom portion of the trench positioned at the end portion is mitigated, making dielectric breakdown less likely to occur.

公开(公告)号：US20200058804A1

公开(公告)日：2020-02-20

申请号：US16348592

申请日：2018-05-17

Applicant: TDK CORPORATION

Inventor： Jun HIRABAYASHI ,  Yutaka MATSUO ,  Minoru FUJITA ,  Jun ARIMA

IPC: H01L29/872 ,  H01L21/28 ,  H01L29/41 ,  H01L29/47 ,  H01L21/02

Abstract: An object of the present invention is to provide a Schottky barrier diode using gallium oxide capable of suppressing heat generation and enhancing heat radiation performance while ensuring mechanical strength and handling performance. A Schottky barrier diode includes a semiconductor substrate 20 made of gallium oxide having a recessed part 23 on the second surface 22, an epitaxial layer 30 made of gallium oxide and provided on a first surface 21 of the semiconductor substrate 20; an anode electrode 40 provided at a position overlapping the recessed part 23 as viewed in the lamination direction and brought into Schottky contact with the epitaxial layer 30, and a cathode electrode 50 provided in the recessed part 23 of the semiconductor substrate 20 and brought into ohmic contact with the semiconductor substrate 20. According to the present invention, since the thickness of the semiconductor substrate at a part thereof where forward current flows is selectively reduced, this makes it possible to suppress heat generation and to enhance heat radiation performance while ensuring mechanical strength and handling performance. Thus, even though gallium oxide having a low heat conductivity is used as the material of the semiconductor substrate, a temperature rise of the element can be suppressed.

公开(公告)号：US20240313130A1

公开(公告)日：2024-09-19

申请号：US18676107

申请日：2024-05-28

Applicant: TDK Corporation

Inventor： Jun ARIMA ,  Minoru FUJITA ,  Katsumi KAWASAKI ,  Jun HIRABAYASHI

IPC: H01L29/872 ,  H01L29/47

CPC classification number: H01L29/8725 ,  H01L29/47

Abstract: Disclosed herein is a junction barrier Schottky diode includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and provided on the semiconductor substrate, an anode electrode brought into Schottky contact with the drift layer, and a cathode electrode brought into ohmic contact with the semiconductor substrate. The drift layer has a center trench filled with the anode electrode and a semiconductor material having a conductivity type opposite to that of the drift layer. A bottom surface of the center trench contacts the semiconductor material without being in contact with the anode electrode. At least a part of a side surface of the center trench is brought into Schottky contact with the anode electrode.

公开(公告)号：US20240072179A1

公开(公告)日：2024-02-29

申请号：US18260519

申请日：2022-01-28

Applicant: TDK Corporation

Inventor： Jun ARIMA ,  Minoru FUJITA ,  Katsumi KAWASAKI ,  Jun HIRABAYASHI

IPC: H01L29/872 ,  H01L29/24

CPC classification number: H01L29/8725 ,  H01L29/24

Abstract: To prevent dielectric breakdown of a Schottky barrier diode using gallium oxide. A Schottky barrier diode has a drift layer provided on a semiconductor substrate, an anode electrode, and a cathode electrode. A width W1 of an outer peripheral trench formed in the drift layer is larger than a width W2 of a center trench. An outer peripheral wall S1 of the outer peripheral trench is curved so as to approach vertical toward the outside, while an inner peripheral wall S2 thereof is closer to vertical than the outer peripheral wall S1. This relaxes an electric field which occurs at the outer peripheral bottom portion of the outer peripheral trench upon application of a backward voltage.

公开(公告)号：US20230113129A1

公开(公告)日：2023-04-13

申请号：US17802438

申请日：2021-02-04

Applicant: TDK Corporation

Inventor： Jun ARIMA ,  Minoru FUJITA ,  Jun HIRABAYASHI

IPC: H01L29/872 ,  H01L29/40 ,  H01L29/06 ,  H01L29/167

Abstract: A Schottky barrier diode 1 includes: a semiconductor substrate made of gallium oxide; a drift layer made of gallium oxide; an anode electrode brought into Schottky contact with an upper surface of the drift layer; and a cathode electrode brought into ohmic contact with a lower surface of the semiconductor substrate. A ring-shaped outer peripheral trench is formed in the upper surface of the drift layer, and the anode electrode is partly filled in the outer peripheral trench. A ring-shaped back surface trench is formed in the lower surface of the semiconductor substrate such that the bottom thereof reaches the drift layer. This limits a current path to the area surrounded by the back surface trench, thereby mitigating electric field concentration in the vicinity of the bottom of the outer peripheral trench.

公开(公告)号：US20210343879A1

公开(公告)日：2021-11-04

申请号：US17282610

申请日：2019-10-09

Applicant: TDK Corporation ,  TAMURA CORPORATION ,  Novel Crystal Technology, Inc.

Inventor： Jun ARIMA ,  Minoru FUJITA ,  Jun HIRABAYASHI ,  Kohei SASAKI

IPC: H01L29/872 ,  H01L29/47

Abstract: An object of the present invention is to provide a Schottky barrier diode less liable to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode according to this disclosure includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and provided on the semiconductor substrate, an anode electrode brought into Schottky contact with the drift layer, and a cathode electrode brought into ohmic contact with the semiconductor substrate. The drift layer has an outer peripheral trench surrounding the anode electrode in a plan view. The surface of the drift layer positioned between the anode electrode and the outer peripheral trench is covered with a semiconductor layer having a conductivity type opposite to that of the drift layer.