公开(公告)号：US09362031B2

公开(公告)日：2016-06-07

申请号：US14502123

申请日：2014-09-30

Applicant: TDK CORPORATION

Inventor： Yoshikazu Shimura ,  Kazuhiko Itoh

IPC: H01C7/02 ,  H01C7/00 ,  H01C1/14

CPC classification number: H01C7/025 ,  C04B35/4682 ,  C04B35/6264 ,  C04B35/62675 ,  C04B35/62695 ,  C04B35/63416 ,  C04B2235/3201 ,  C04B2235/3208 ,  H01C1/1406 ,  H01C7/008 ,  H01C7/027

Abstract: A semiconductor ceramic composition which includes a compound represented by the following formula (1) as a main component, (Ba1-x-y-wBixAyREw)m(Ti1-zTMz)O3 (1) (wherein, A is at least one element selected from Na or K, RE is at least one element selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Gd, Dy and Er, TM is at least one element selected from the group consisting of V, Nb and Ta, w, x, y, z and m satisfy the following relationships of (2)˜(5), 0.007≦x≦0.125 (2), x

Abstract translation: 包含下述式（1）表示的化合物作为主要成分的（Ba1-xy-wBixAyREw）m（Ti1-zTMz）O3（1）的半导体陶瓷组合物（其中，A为选自Na 或K，RE为选自Y，La，Ce，Pr，Nd，Sm，Gd，Dy和Er中的至少一种元素，TM为选自V，Nb和Ta中的至少一种元素 （2）〜（5），0.007＆nlE; x＆nlE; 0.125（2），x

公开(公告)号：US10014097B2

公开(公告)日：2018-07-03

申请号：US15222050

申请日：2016-07-28

Applicant: TDK CORPORATION

Inventor： Kazutaka Fujita ,  Kazuhiko Itoh ,  Yoshikazu Shimura

IPC: H01C7/02 ,  C04B35/468 ,  C04B35/626 ,  C04B35/64 ,  H01C1/14

CPC classification number: H01C7/027 ,  C04B35/4682 ,  C04B35/6261 ,  C04B35/62625 ,  C04B35/6263 ,  C04B35/62645 ,  C04B35/64 ,  C04B2235/3201 ,  C04B2235/3208 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3234 ,  C04B2235/3239 ,  C04B2235/3251 ,  C04B2235/3253 ,  C04B2235/3255 ,  C04B2235/3262 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/602 ,  C04B2235/606 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/658 ,  C04B2235/79 ,  C04B2235/9607 ,  H01C1/1406 ,  H01C7/02 ,  H01C7/025

Abstract: A semiconductor ceramic composition including a compound represented by the following general formula (1) as a main component. (BavBixAyREw)m(TiuTMz)O3  (1) (wherein, A represents both elements of Na and K; RE is at least one element selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Gd, Dy and Er; and TM is at least one element selected from the group consisting of V, Nb and Ta.) 0.01≤x≤0.15  (2) x≤y≤0.3  (3) 0≤(w+z)≤0.01  (4) v+x+y+w=1  (5) u+z=1  (6) 0.950≤m≤1.050  (7) further, 0.001 mol to 0.055 mol of Ca is included and the ratio of Na/(Na+K) is 0.1 or more and less than 1.

公开(公告)号：US09697935B2

公开(公告)日：2017-07-04

申请号：US14774824

申请日：2014-02-17

Applicant: TDK CORPORATION

Inventor： Kazuhiko Itoh ,  Yoshikazu Shimura

IPC: H01C7/10 ,  H01C7/02 ,  C04B35/468 ,  H01C1/14 ,  H01C7/00

CPC classification number: H01C7/025 ,  C04B35/4682 ,  C04B2235/3201 ,  C04B2235/3208 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3239 ,  C04B2235/3251 ,  C04B2235/3262 ,  C04B2235/3298 ,  C04B2235/3418 ,  H01C1/1406 ,  H01C7/008 ,  H01C7/02

Abstract: A barium titanate based PTC thermistor ceramic composition without using Pb. Its Curie temperature is shifted to a temperature higher than 120° C. The PTC thermistor can readily turn semiconductive even if it is sintered in air. The resistivity at 25° C. is low and the variation rate of the resistivity at 25° C. with time is little. The PTC thermistor ceramic composition includes a sintered body having a barium titanate based compound represented by formula (1) as the main component, (Ba1-x-y-wBixAyREw)α(Ti1-zTMz)O3 (1), wherein, 1.02y≦x≦1.5y (2), 0.007≦y≦0.125 (3), 0≦(w+z)≦0.01 (4), 0.97≦α≦1.06 (5), and the sintered body contains Ca in a ratio of 0.01 mol or more and less than 0.05 mol relative to 1 mol of Ti site in terms of element.

公开(公告)号：US09472326B2

公开(公告)日：2016-10-18

申请号：US14751812

申请日：2015-06-26

Applicant: TDK CORPORATION

Inventor： Yoshikazu Shimura ,  Kazuhiko Itoh ,  Kazutaka Fujita

IPC: H01C7/02 ,  H01C7/00 ,  H01C1/14 ,  C04B35/462 ,  C04B35/468

CPC classification number: H01C7/025 ,  C04B35/462 ,  C04B35/4682 ,  C04B2235/3201 ,  C04B2235/3213 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3239 ,  C04B2235/3251 ,  C04B2235/3262 ,  C04B2235/3272 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/79 ,  H01C1/14 ,  H01C7/008 ,  H01C7/02

Abstract: A semiconductor ceramic composition with small resistivity at room temperature and large temperature coefficient of resistance is provided; the composition is represented by formula, (Ba1-x-y-wBixAyREw)m(Ti1-zTMz)O3  (1), (wherein, A is at least one element from Na or K, RE is at least one element from the group consisting of Y, La, Ce, Pr, Nd, Sm, Gd, Dy and Er, TM is at least one element from the group consisting of V, Nb and Ta, and w, x, y, z (each in mol) and the mole ratio m of Ba site to Ti site satisfy the following in equations, 0.007≦x≦0.125  (2) x