公开(公告)号：US20140292322A1

公开(公告)日：2014-10-02

申请号：US14189211

申请日：2014-02-25

Applicant: TDK CORPORATION

Inventor： Hiroshi YAMAZAKI ,  Yoshiyuki MIZOGUCHI ,  Satoshi ABE ,  Homare TOKIDA ,  Toshiyuki AYUKAWA

IPC: G01R33/09

CPC classification number: G01R33/098 ,  G01R33/093

Abstract: A magnetic sensor includes an MR element and a bias field generation unit. The MR element includes a magnetization pinned layer having a magnetization pinned in a direction parallel to an X direction, a free layer having a magnetization that varies depending on an X-direction component of an external magnetic field, and a nonmagnetic layer interposed between the magnetization pinned layer and the free layer. The magnetization pinned layer, the nonmagnetic layer and the free layer are stacked to be adjacent in a Y direction. The free layer receives an interlayer coupling magnetic field in a direction parallel to the X direction resulting from the magnetization pinned layer. The bias field generation unit applies a bias magnetic field to the free layer. The bias magnetic field includes a first component in a direction opposite to that of the interlayer coupling magnetic field and a second component in a Z direction.

Abstract translation: 磁传感器包括MR元件和偏置场产生单元。 MR元件包括具有在与X方向平行的方向上固定的磁化的磁化固定层，具有根据外部磁场的X方向分量而变化的磁化的自由层和介于磁化之间的非磁性层 钉扎层和自由层。 磁化钉扎层，非磁性层和自由层在Y方向上堆叠成相邻。 自由层在由磁化固定层产生的与X方向平行的方向上接收层间耦合磁场。 偏置场产生单元向自由层施加偏置磁场。 偏置磁场包括与层间耦合磁场的方向相反的方向的第一分量和Z方向上的第二分量。

公开(公告)号：US20140292321A1

公开(公告)日：2014-10-02

申请号：US14177602

申请日：2014-02-11

Applicant: TDK CORPORATION

Inventor： Hiroshi YAMAZAKI ,  Yoshiyuki MIZOGUCHI ,  Takahiro IMAI ,  Satoshi ABE ,  Homare TOKIDA

IPC: G01R33/09

CPC classification number: G01R33/093 ,  G01R33/098

Abstract: A magnetic sensor includes an MR element and a pair of magnets. The MR element includes a magnetization pinned layer having a magnetization pinned in a direction parallel to an X direction, a free layer having a magnetization that varies depending on an X-direction component of an external magnetic field, and a nonmagnetic layer interposed between the magnetization pinned layer and the free layer. The magnetization pinned layer, the nonmagnetic layer and the free layer are stacked to be adjacent in a Y direction. The free layer receives an interlayer coupling magnetic field in a direction parallel to the X direction resulting from the magnetization pinned layer. The pair of magnets applies a bias magnetic field to the free layer. The bias magnetic field includes a first component in a direction opposite to that of the interlayer coupling magnetic field and a second component in a Z direction.

Abstract translation: 磁传感器包括MR元件和一对磁体。 MR元件包括具有在与X方向平行的方向上固定的磁化的磁化固定层，具有根据外部磁场的X方向分量而变化的磁化的自由层和介于磁化之间的非磁性层 钉扎层和自由层。 磁化钉扎层，非磁性层和自由层在Y方向上堆叠成相邻。 自由层在由磁化固定层产生的与X方向平行的方向上接收层间耦合磁场。 这对磁体对自由层施加偏置磁场。 偏置磁场包括与层间耦合磁场的方向相反的方向的第一分量和Z方向上的第二分量。

公开(公告)号：US20190162559A1

公开(公告)日：2019-05-30

申请号：US16201327

申请日：2018-11-27

Applicant: TDK CORPORATION

Inventor： Naoki OHTA ,  Yoshiyuki MIZOGUCHI

IPC: G01D5/16

Abstract: A sensor system according to an embodiment of the disclosure includes a physical quantity distribution generation source configured to generate a distribution of a physical quantity, and a plurality of sensor packages including respective sensor chips configured to detect the physical quantity. In a plane including the sensor packages, central positions of the respective sensor chips are shifted in directions from central positions of the respective sensor packages toward a central position of the distribution of the physical quantity, and distances from the central position of the distribution of the physical quantity to the central positions of the respective sensor chips of the respective sensor packages are substantially equal to each other.

公开(公告)号：US20160282146A1

公开(公告)日：2016-09-29

申请号：US14996468

申请日：2016-01-15

Applicant: TDK Corporation

Inventor： Kunihiro UEDA ,  Yoshiyuki MIZOGUCHI ,  Hiroshi YAMAZAKI ,  Suguru WATANABE

IPC: G01D5/20 ,  G01R33/09

CPC classification number: G01R33/09 ,  G01D5/2455 ,  G01R33/093 ,  G01R33/098

Abstract: A magnetic sensor is provided with first and second magnetoresistive effect elements that can detect an external magnetic field. The first and second magnetoresistive effect elements are a plurality of layers of multilayer body including free layers where their magnetization directions vary due to the external magnetic field. Shapes of the first and second magnetoresistive effect elements viewed from the upper side in the lamination direction are different from each other. The first magnetoresistive effect element has a shape that can increase a slope of an output of the first magnetoresistive effect element relative to the change of the external magnetic field. The second magnetoresistive effect element has a shape that can decrease a slope of an output of the second magnetoresistive effect element relative to the change of the external magnetic field compared to the slope of the output of the first magnetoresistive effect element.

Abstract translation: 磁传感器设置有能够检测外部磁场的第一和第二磁阻效应元件。 第一和第二磁阻效应元件是包括自由层的多层多层体，其中它们的磁化方向由于外部磁场而变化。 从层叠方向的上侧观察的第一和第二磁阻效应元件的形状彼此不同。 第一磁阻效应元件具有能够相对于外部磁场的变化增加第一磁阻效应元件的输出的斜率的形状。 第二磁阻效应元件具有相对于第一磁阻效应元件的输出的斜率相对于外部磁场的变化可以减小第二磁阻效应元件的输出的斜率的形状。

公开(公告)号：US20200348373A1

公开(公告)日：2020-11-05

申请号：US16916606

申请日：2020-06-30

Applicant: TDK Corporation

Inventor： Kunihiro UEDA ,  Yoshiyuki MIZOGUCHI ,  Hiroshi YAMAZAKI ,  Suguru WATANABE

IPC: G01R33/09

Abstract: A magnetic sensor is provided with first and second magnetoresistive effect elements that can detect an external magnetic field. The first and second magnetoresistive effect elements are a plurality of layers of multilayer body including free layers where their magnetization directions vary due to the external magnetic field. Shapes of the first and second magnetoresistive effect elements viewed from the upper side in the lamination direction are different from each other. The first magnetoresistive effect element has a shape that can increase a slope of an output of the first magnetoresistive effect element relative to the change of the external magnetic field. The second magnetoresistive effect element has a shape that can decrease a slope of an output of the second magnetoresistive effect element relative to the change of the external magnetic field compared to the slope of the output of the first magnetoresistive effect element.

公开(公告)号：US20180364316A1

公开(公告)日：2018-12-20

申请号：US16049993

申请日：2018-07-31

Applicant: TDK Corporation

Inventor： Kunihiro UEDA ,  Yoshiyuki MIZOGUCHI ,  Hiroshi YAMAZAKI ,  Suguru WATANABE

IPC: G01R33/09 ,  G01D5/245

CPC classification number: G01R33/09 ,  G01D5/2455 ,  G01R33/093 ,  G01R33/098

Abstract: A magnetic sensor is provided with first and second magnetoresistive effect elements that can detect an external magnetic field. The first and second magnetoresistive effect elements are a plurality of layers of multilayer body including free layers where their magnetization directions vary due to the external magnetic field. Shapes of the first and second magnetoresistive effect elements viewed from the upper side in the lamination direction are different from each other. The first magnetoresistive effect element has a shape that can increase a slope of an output of the first magnetoresistive effect element relative to the change of the external magnetic field. The second magnetoresistive effect element has a shape that can decrease a slope of an output of the second magnetoresistive effect element relative to the change of the external magnetic field compared to the slope of the output of the first magnetoresistive effect element.

公开(公告)号：US20160282145A1

公开(公告)日：2016-09-29

申请号：US14996536

申请日：2016-01-15

Applicant: TDK Corporation

Inventor： Kunihiro UEDA ,  Yoshiyuki MIZOGUCHI ,  Hiroshi YAMAZAKI ,  Suguru WATANABE

IPC: G01D5/16 ,  G01R33/09 ,  G01R33/00

CPC classification number: G01R33/09 ,  G01R1/00 ,  G01R33/0052 ,  G01R33/093 ,  H01L21/00 ,  H01L2221/00

Abstract: A magnetic sensor is provided with first and second magnetoresistive effect elements that can detect an external magnetic field. The first and second magnetoresistive effect elements include at least magnetization direction change layers where a direction of magnetization is changed according to an external magnetic field. The width W1 of a magnetization direction change layer in an initial magnetization direction of the magnetization direction change layer of the first magnetoresistive effect element, and the width W2 of a magnetization direction change layer in an initial magnetization direction of the magnetization direction change layer of the second magnetoresistive effect element have a relationship shown by formula (1) below. Sensitivity of the first magnetoresistive effect element to the external magnetic field is higher than that of the second magnetoresistive effect element. W1>W2  (1)