-
1.
公开(公告)号:US20200312553A1
公开(公告)日:2020-10-01
申请号:US16823789
申请日:2020-03-19
Applicant: TDK Corporation
Inventor: Shirou OOTSUKI , Aiko TAKAHASHI , Yasunori HARADA , Shota SUZUKI , Yasunaga KAGAYA , Tomohiko KATO , Mirai ISHIDA
Abstract: A dielectric film, contains: (1) Bi and Ti; (2) at least one element E1 selected from the group consisting of Na and K; and (3) at least one element E2 selected from the group consisting of Ba, Sr, and Ca. The dielectric film has a main phase containing an oxide that contains Bi, Ti, the element E1, and the element E2 and has a perovskite structure, and a subphase that contains Bi and has an oxygen concentration lower than that of the main phase. In a sectional surface of the dielectric film, a ratio RS of an area of the subphase to a sum of an area of the main phase and the area of the subphase is greater than or equal to 0.03 and less than or equal to 0.3.
-
公开(公告)号:US20220059753A1
公开(公告)日:2022-02-24
申请号:US17274897
申请日:2019-09-11
Applicant: TDK Corporation , TOKYO INSTITUTE OF TECHNOLOGY
Inventor: Yusuke SATO , Mirai ISHIDA , Wakiko SATO , Hiroshi FUNAKUBO , Takao SHIMIZU , Miyu HASEGAWA , Keisuke ISHIHAMA
IPC: H01L41/187 , H01L41/08 , H01L41/316 , H01L41/319 , C04B35/475 , G11B5/127 , G01C19/5607 , G01L1/16 , B41J2/14
Abstract: Provided is a dielectric thin film including a metal oxide. The metal oxide includes bismuth, sodium, barium, and titanium, at least a part of the metal oxide is a tetragonal crystal having a perovskite structure, and a (100) plane of at least a part of the tetragonal crystal is oriented in a normal direction do of a surface of the dielectric thin film 3.
-
公开(公告)号:US20190288181A1
公开(公告)日:2019-09-19
申请号:US16357864
申请日:2019-03-19
Applicant: TDK CORPORATION
Inventor: Hiroki KATOH , Yuiko HIROSE , Masakazu HIROSE , Mirai ISHIDA
IPC: H01L41/187 , H01L41/43 , C04B35/495 , C04B35/63
Abstract: A piezoelectric composition including copper, germanium and a complex oxide represented by a compositional formula KmNbO3 and having a perovskite structure, in which m in the compositional formula satisfies 0.970≤ m≤0.999, and with respect to 1 mol of the complex oxide, x mol % of copper in terms of a copper element and y mol % of germanium in terms of a germanium element are contained, wherein x satisfies 0.100 ≤x≤1.000 and y satisfies 0.000
-
-