公开(公告)号：US11563122B2

公开(公告)日：2023-01-24

申请号：US17268628

申请日：2019-08-20

Applicant: TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LIMITED

Inventor： Hossam Haick ,  Muhammad Khatib

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/16 ,  H01L29/24 ,  H01L29/423 ,  H01L29/66

Abstract: The present invention provides a self-healing field-effect transistor (FET) device comprising a self-healing substrate and a self-healing dielectric layer, said substrate and said layer comprising a disulfide-containing poly(urea-urethane) (PUU) polymer, wherein the dielectric layer has a thickness of less than about 10 μm, a gate electrode, at least one source electrode, and at least one drain electrode, said electrodes comprising electrically conductive elongated nanostructures; and at least one channel comprising semi-conducting elongated nanostructures. Further provided is a method for fabricating the FET device.

公开(公告)号：US11916148B2

公开(公告)日：2024-02-27

申请号：US18067702

申请日：2022-12-17

Applicant: TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LIMITED

Inventor： Hossam Haick ,  Muhammad Khatib

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/16 ,  H01L29/24 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/78603 ,  H01L29/0669 ,  H01L29/1608 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/66969

Abstract: A self-healing field-effect transistor (FET) device is disclosed in this application, the self-healing FET has a self-healing substrate, a self-healing dielectric layer, a gate electrode, at least one source electrode, at least one drain electrode, and at least one channel. The self-healing substrate and the self-healing dielectric layer have a disulfide-containing poly(urea-urethane) (PUU) polymer. The self-healing dielectric layer has a thickness of less than about 10 μm. The electrodes have electrically conductive elongated nanostructures. The at least one channel has semi-conducting elongated nanostructures.