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公开(公告)号:US11563122B2
公开(公告)日:2023-01-24
申请号:US17268628
申请日:2019-08-20
发明人: Hossam Haick , Muhammad Khatib
IPC分类号: H01L29/786 , H01L29/06 , H01L29/16 , H01L29/24 , H01L29/423 , H01L29/66
摘要: The present invention provides a self-healing field-effect transistor (FET) device comprising a self-healing substrate and a self-healing dielectric layer, said substrate and said layer comprising a disulfide-containing poly(urea-urethane) (PUU) polymer, wherein the dielectric layer has a thickness of less than about 10 μm, a gate electrode, at least one source electrode, and at least one drain electrode, said electrodes comprising electrically conductive elongated nanostructures; and at least one channel comprising semi-conducting elongated nanostructures. Further provided is a method for fabricating the FET device.
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公开(公告)号:US11965850B2
公开(公告)日:2024-04-23
申请号:US17540359
申请日:2021-12-02
发明人: Hossam Haick , Weiwei Wu
IPC分类号: G01N27/12 , G01K7/18 , G01L19/00 , G01N33/497
CPC分类号: G01N27/125 , G01K7/186 , G01L19/0092 , G01N33/497 , G01N2033/4975
摘要: The present invention provides a vapor-permeable flexible sensing platform unit comprising: a first porous membrane, wherein said membrane is substantially flexible and hydrophobic; and a volatile organic compounds (VOCs) sensor disposed on said membrane, the VOCs sensor comprising an electrode array and a conducting polymer porous film being in electric contact with said electrode array, wherein the VOCs sensor is insensitive to lateral strain. Further provided are a method of preparation of said platform unit and a lift-off, float-on (LOFO) method for the preparation of protonically doped polyaniline (PANI) thin films.
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公开(公告)号:US11209418B2
公开(公告)日:2021-12-28
申请号:US16486583
申请日:2018-02-21
发明人: Hossam Haick , Weiwei Wu
IPC分类号: G01N33/497 , G01K7/18 , G01L19/00
摘要: The present invention provides a vapor-permeable flexible sensing platform unit comprising: a first porous membrane, wherein said membrane is substantially flexible and hydrophobic; and a volatile organic compounds (VOCs) sensor disposed on said membrane, the VOCs sensor comprising an electrode array and a conducting polymer porous film being in electric contact with said electrode array, wherein the VOCs sensor is insensitive to lateral strain. Further provided are a method of preparation of said platform unit and a lift-off, float-on (LOFO) method for the preparation of protonically doped polyaniline (PANI) thin films.
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公开(公告)号:US11916148B2
公开(公告)日:2024-02-27
申请号:US18067702
申请日:2022-12-17
发明人: Hossam Haick , Muhammad Khatib
IPC分类号: H01L29/78 , H01L29/06 , H01L29/16 , H01L29/24 , H01L29/423 , H01L29/66 , H01L29/786
CPC分类号: H01L29/78603 , H01L29/0669 , H01L29/1608 , H01L29/24 , H01L29/42384 , H01L29/66969
摘要: A self-healing field-effect transistor (FET) device is disclosed in this application, the self-healing FET has a self-healing substrate, a self-healing dielectric layer, a gate electrode, at least one source electrode, at least one drain electrode, and at least one channel. The self-healing substrate and the self-healing dielectric layer have a disulfide-containing poly(urea-urethane) (PUU) polymer. The self-healing dielectric layer has a thickness of less than about 10 μm. The electrodes have electrically conductive elongated nanostructures. The at least one channel has semi-conducting elongated nanostructures.
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