公开(公告)号：US20140312209A1

公开(公告)日：2014-10-23

申请号：US14249388

申请日：2014-04-10

Applicant: TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LTD.

Inventor： Yael NEMIROVSKY ,  Tomer MERHAV ,  Vitali SAVUSKAN ,  Amikam NEMIROVSKY

IPC: G01J1/42

CPC classification number: G01J1/4228 ,  G01J1/0488

Abstract: A device that may include a narrowband filter that is arranged to pass radiation within a main signal waveband in which a muffle flash is expected to include energy above a first energy threshold; a first single photon avalanche diode (SPAD) arranged to detect photons of the main signal waveband during different points in time and to output first digital detection signals representative of the photons of the main signal waveband; and a signal processor that is arranged to receive the first digital detection signals and to detect, in response to at least the first digital detection signals, the muffle flash.

Abstract translation: 可以包括窄带滤波器的装置，该窄带滤波器被布置成使主信号波段内的辐射通过，其中预期马弗炉闪光将包括高于第一能量阈值的能量; 布置成在不同时间点检测主信号波段的光子并输出表示主信号波段的光子的第一数字检测信号的第一单光子雪崩二极管（SPAD） 以及信号处理器，被配置为接收第一数字检测信号并响应于至少第一数字检测信号来检测马弗炉闪光。

公开(公告)号：US20170211983A1

公开(公告)日：2017-07-27

申请号：US15118895

申请日：2015-02-12

Applicant: TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LTD.

Inventor： Yael NEMIROVSKY

IPC: G01J5/24 ,  H01L31/028 ,  H01L31/11 ,  G01J5/02 ,  H01L27/146

CPC classification number: G01J5/24 ,  G01J5/0215 ,  G01J5/20 ,  H01L27/14681 ,  H01L31/028 ,  H01L31/1105

Abstract: A method and a sensing device are provided. The sensing device may include a readout circuit, a bulk, a holding element and a heterojunction bipolar transistor; wherein heterojunction bipolar transistor is configured to generate detection signals responsive to a temperature of at least a portion of the heterojunction bipolar transistor; wherein the holding element is configured to support the heterojunction bipolar transistor; wherein the heterojunction bipolar transistor is thermally isolated from the bulk; wherein the readout circuit is electrically coupled to the heterojunction bipolar transistor; and wherein the readout circuit is configured to receive the detection signals and to process the detection signals to provide information about electromagnetic radiation that affected the temperature of the at least portion of the heterojunction bipolar transistor.