公开(公告)号：US3608519A

公开(公告)日：1971-09-28

申请号：US3608519D

申请日：1968-12-31

Applicant: TEXAS INSTRUMENTS INC

Inventor： BEAN KENNETH E ,  CAMPION JOHN R

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01L21/00 ,  B05C11/14

CPC classification number: C23C16/45563 ,  C23C16/455 ,  H01L21/00

Abstract: A reactor for depositing a thin layer of material on a semiconductor slice by thermal decomposition of reactant gases is disclosed which has a circular rail, a number of disk-shaped graphite susceptors or supports each having a flat face from which projects a circular retaining rim, a member rotating on an axis extending through the circular rail for rolling the susceptors along the rail while supporting the susceptors at an inclined angle, and an RF coil for heating the susceptors as they are rolled along the rail. The edge of a semiconductor slice placed on the face of the susceptor rolls around the rim of the susceptor as the susceptor rolls. This mechanism is enclosed in a chamber and the reactant gases passed through the chamber. Thus, anomalies in the RF field are compensated as the susceptor rolls around the rail to evenly heat the susceptor, thermal anomalies in the susceptors are compensated as the slice continually moves over the susceptor, and anomalies in the composition of the reactant stream are compensated as each semiconductor slice rotates about its own axis while being translated in a circular path through the vapor stream. Layers uniform in thickness within + OR - 0.5 percent have been achieved, representing an order of magnitude improvement over prior art devices, with corresponding improvements in the uniformity of doping levels and resistivities.