公开(公告)号：US3669861A

公开(公告)日：1972-06-13

申请号：US3669861D

申请日：1967-08-28

Applicant: TEXAS INSTRUMENTS INC

Inventor： CASH JOHN H JR ,  KEENE JOE P

IPC: C23C14/35 ,  H01L21/00 ,  C23C15/00

CPC classification number: C23C14/35 ,  H01L21/00

Abstract: A method of cleaning a semiconductor substrate in an inert gas atmosphere by use of R. F. energy is disclosed. The field of R. F. energy is controlled by a magnetic field which is perpendicular to the electric field of the R. F. .energy. Preferably, the R. F. energy is at a frequency of 13.560 MHz with a power of approximately 500 watts.

Abstract translation: 公开了一种通过使用R.F的能量在惰性气体气氛中清洁半导体衬底的方法。 R.F.能量的电场由与F.F.电能的电场垂直的磁场控制。 优选地，R.F能量的频率为13.560MHz，功率为约500瓦。

公开(公告)号：US3528906A

公开(公告)日：1970-09-15

申请号：US3528906D

申请日：1967-06-05

Applicant: TEXAS INSTRUMENTS INC

Inventor： CASH JOHN H JR ,  CUNNINGHAM JAMES A

IPC: C23C14/28 ,  H01J37/34 ,  H01L21/00 ,  H01L23/29 ,  C23C15/00

CPC classification number: H01L21/00 ,  H01J37/3402 ,  H01L23/29 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：US3677924A

公开(公告)日：1972-07-18

申请号：US3677924D

申请日：1970-03-13

Applicant: TEXAS INSTRUMENTS INC

Inventor： CASH JOHN H JR ,  CUNNINGHAM JAMES A

IPC: C23C14/28 ,  H01J37/34 ,  H01L21/00 ,  H01L23/29 ,  C23C15/00

CPC classification number: H01L21/00 ,  H01J37/3402 ,  H01L23/29 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A METHOD AND SYSTEM FOR RF SPUTTERING THIN CONDUCTING AND THIN INSULATING FILMA ON A SEMICONDUCTOR SUBSTRATE USING A FIRST ELECTRODE FOR SUPPORTING A SOURCE MATERIAL AND AN APERTURED SECOND ELECTRODE. THE RF VOLTAGE IS APPLIED ACROSS THE FIRST AND SECOND ELECTRODES. THE SUBSTRATE IS SUPPORTED BY A THIRD ELECTRODE AND EXPOSED TO ATOMS SPUTTERED FROM THE SOURCE WHICH PASS THROUGH THE APERTURED SECOND ELECTRODE. THE THIRD ELECTRODE MAY BE AT THE SAME POTENTIAL AS THE SECOND ELECTRODE, OR AT A DIFFERENT POTENTIAL TO CARRY OUT BIAS SPUTTERING. THE SYSTEM INCLUDES MULTIPLE PAIRS OF FIRST AND SECOND ELECTRODES FOR MULTIPLE FILM DEPOSITION WITHOUT BREADING VACUUM AND A ROTATING THIRD ELECTRODE WHICH MOVES THE SUBSTRATES PAST THE APERTURES IN THE SECOND ELECTRODES DURING SPUTTERING TO ELIMI-

NATE SHADOWING AND TO FURTHER ENHANCE COOLING. A SHUTTER IS PROVIDED TO PREVENT CROSSCONTAMINATION OF THE IDLE SOURCES AND THE FILM BEING DEPOSITED ON THE SUBSTRATE.