公开(公告)号：US3629018A

公开(公告)日：1971-12-21

申请号：US3629018D

申请日：1969-01-23

Applicant: TEXAS INSTRUMENTS INC

Inventor： HENDERSON GEORGE A ,  PITTMAN GARY E

IPC: H01L21/00 ,  H01L21/22 ,  H01L23/29 ,  H01L27/00 ,  H01L33/00 ,  H01S5/30 ,  H01S5/32 ,  H01L7/44

CPC classification number: H01S5/32 ,  H01L21/00 ,  H01L23/29 ,  H01L27/00 ,  H01L33/00 ,  H01L2924/0002 ,  H01S5/30 ,  Y10S148/043 ,  Y10S148/049 ,  Y10S148/065 ,  Y10S148/106 ,  Y10S148/119 ,  Y10S148/145 ,  H01L2924/00

Abstract: A light-emitting semiconductor diode is made from an N-type crystal of GaAsP or GaP by the selective diffusion of zinc therein to form a PN junction. A special diffusion mask system is employed, to obtain a combination of direct diffusion into an unmasked region, and lateral diffusion beneath a selected portion of the mask. The major, active portion of the junction is formed by lateral diffusion, whereas that portion of the P-region formed by direct diffusion serves primarily as a preferred location for contact metallization.