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公开(公告)号:US3293513A
公开(公告)日:1966-12-20
申请号:US21564262
申请日:1962-08-08
Applicant: TEXAS INSTRUMENTS INC
Inventor: BIARD JAMES R , PITTMAN GARY E
IPC: H01L29/207 , H01L33/00
CPC classification number: H01L29/207 , H01L33/00
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2.
公开(公告)号:US3304431A
公开(公告)日:1967-02-14
申请号:US32714063
申请日:1963-11-29
Applicant: TEXAS INSTRUMENTS INC
Inventor: BIARD JAMES R , BONIN EDWARD L , KILBY JACK S , PITTMAN GARY E
IPC: G05F1/575 , H01L27/00 , H01L31/167 , H03F3/08 , H03F3/343 , H03K17/795 , H03K19/14
CPC classification number: H03K19/14 , G05F1/575 , H01L27/00 , H01L31/167 , H03F3/085 , H03F3/343 , H03K17/795 , H03K17/7955 , Y10S323/902
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3.Process for the fabrication of light-emitting semiconductor diodes 失效
Title translation: 用于制造发光二极管二极管的工艺公开(公告)号:US3629018A
公开(公告)日:1971-12-21
申请号:US3629018D
申请日:1969-01-23
Applicant: TEXAS INSTRUMENTS INC
Inventor: HENDERSON GEORGE A , PITTMAN GARY E
CPC classification number: H01S5/32 , H01L21/00 , H01L23/29 , H01L27/00 , H01L33/00 , H01L2924/0002 , H01S5/30 , Y10S148/043 , Y10S148/049 , Y10S148/065 , Y10S148/106 , Y10S148/119 , Y10S148/145 , H01L2924/00
Abstract: A light-emitting semiconductor diode is made from an N-type crystal of GaAsP or GaP by the selective diffusion of zinc therein to form a PN junction. A special diffusion mask system is employed, to obtain a combination of direct diffusion into an unmasked region, and lateral diffusion beneath a selected portion of the mask. The major, active portion of the junction is formed by lateral diffusion, whereas that portion of the P-region formed by direct diffusion serves primarily as a preferred location for contact metallization.
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公开(公告)号:US3413480A
公开(公告)日:1968-11-26
申请号:US32713663
申请日:1963-11-29
Applicant: TEXAS INSTRUMENTS INC
Inventor: BIARD JAMES R , BONIN EDWARD L , KILBY JACK S , PITTMAN GARY E
IPC: G05F1/575 , H01L27/00 , H01L31/167 , H03F3/08 , H03F3/343 , H03K17/795 , H03K19/14
CPC classification number: H03K19/14 , G05F1/575 , H01L27/00 , H01L31/167 , H03F3/085 , H03F3/343 , H03K17/795 , H03K17/7955 , Y10S323/902
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5.Semiconductor junction device for generating optical radiation 失效
Title translation: 用于产生光学辐射的半导体结器件公开(公告)号:US3404304A
公开(公告)日:1968-10-01
申请号:US36388564
申请日:1964-04-30
Applicant: TEXAS INSTRUMENTS INC
Inventor: BONIN EDWARD L , PITTMAN GARY E , REED BRUCE S
IPC: H01L33/00
CPC classification number: H01L33/0008 , H01L33/00 , Y10S148/049 , Y10S148/051 , Y10S148/106 , Y10S148/145 , Y10S257/926
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6.High frequency electro-optical device using photosensitive and photoemissive diodes 失效
Title translation: 高频电光装置使用光敏和光发光二极管公开(公告)号:US3304430A
公开(公告)日:1967-02-14
申请号:US32713163
申请日:1963-11-29
Applicant: TEXAS INSTRUMENTS INC
Inventor: BIARD JAMES R , PITTMAN GARY E
IPC: G05F1/575 , H01L27/00 , H01L31/167 , H03F3/08 , H03F3/343 , H03K17/795 , H03K19/14
CPC classification number: H03K19/14 , G05F1/575 , H01L27/00 , H01L31/167 , H03F3/085 , H03F3/343 , H03K17/795 , H03K17/7955 , Y10S323/902
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