公开(公告)号：US3616401A

公开(公告)日：1971-10-26

申请号：US3616401D

申请日：1966-06-30

Applicant: TEXAS INSTRUMENTS INC

Inventor： CUNNINGHAM JAMES A ,  ORR COY D

IPC: H01L21/00 ,  H01L23/485 ,  H01L23/522 ,  H01L27/00 ,  C23C15/00

CPC classification number: H01L23/522 ,  H01L21/00 ,  H01L23/485 ,  H01L27/00 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed are methods for depositing multilayer ohmic contacts upon a substrate of semiconductor material disposed within a low pressure chamber; such including for example the particular features of upward sputtering of the various metal films including deposition of a thin layer of molybdenum directly on initially formed integral areas of platinum silicide, followed by simultaneous sputtering of platinum with gold utilizing a sputtering cathode composed of platinum and gold, with the addition of hydrogen into an inert sputtering atmosphere to eliminate undesireable formation of oxides. This invention provides improved adhesion of the sputtered metal films to the semiconductor surface and the silicon oxide, and provides the formation of the metal film which is substantially free of pin holes and which has substantially uniform resistivity.

公开(公告)号：US3667005A

公开(公告)日：1972-05-30

申请号：US3667005D

申请日：1970-08-03

Applicant: TEXAS INSTRUMENTS INC

Inventor： CUNNINGHAM JAMES A ,  ORR COY D

IPC: H01L21/00 ,  H01L23/485 ,  H01L23/522 ,  H01L27/00 ,  H01L1/14

CPC classification number: H01L23/485 ,  H01L21/00 ,  H01L23/522 ,  H01L27/00 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed are methods for depositing multilayer ohmic contacts upon a substrate of semiconductor material disposed within a low pressure chamber; such including for example the particular features of upward sputtering of the various metal films, simultaneous sputtering of platinum with gold utilizing a sputtering cathode composed of platinum and gold, and adding hydrogen into an inert sputtering atmosphere to eliminate undesirable formation of oxides. This invention provides imporved adhesion of the sputtered metal films to the semiconductor surface and the silicon oxide, and provides the formation of the metal film which is substantially free of pin holes and which has substantially uniform resistivity.

Abstract translation: 公开了一种在设置在低压室内的半导体材料的衬底上沉积多层欧姆接触的方法; 例如包括各种金属膜的向上溅射的特定特征，使用由铂和金构成的溅射阴极同时溅射铂，并将氢添加到惰性溅射气氛中以消除不期望的氧化物形成。 本发明提供了溅射金属膜对半导体表面和氧化硅的粘附，并提供了基本上没有针孔并且具有基本上均匀的电阻率的金属膜的形成。