Patent search ap:("TEXAS INSTRUMENTS INC") AND inv:"TEAGUE EDGER CLAYTON" Page 1

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发明授权
Method of forming semiconductor regions in an epitaxial layer 失效
Title translation: 在外延层中形成半导体区的方法

公开(公告)号：US3533862A

公开(公告)日：1970-10-13

申请号：US3533862D

申请日：1967-08-21

Applicant: TEXAS INSTRUMENTS INC

Inventor： GLEIM PAUL S , TEAGUE EDGER CLAYTON

IPC: H01L21/00 , H01L21/22 , H01L7/34 , H01L7/36

CPC classification number: H01L21/00 , H01L21/22 , Y10S148/007 , Y10S438/916 , Y10S438/925

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