公开(公告)号：US3624467A

公开(公告)日：1971-11-30

申请号：US3624467D

申请日：1969-02-17

Applicant: TEXAS INSTRUMENTS INC

Inventor： BEAN KENNETH E ,  GLEIM PAUL S

IPC: H01L21/00 ,  H01L21/20 ,  H01L21/205 ,  H01L21/763 ,  H01L27/06 ,  H01L7/36 ,  H01L19/00

CPC classification number: H01L27/0652 ,  H01L21/00 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/763 ,  Y10S148/049 ,  Y10S148/085 ,  Y10S148/106 ,  Y10S148/115 ,  Y10S148/122 ,  Y10S148/135 ,  Y10S148/15

Abstract: Polycrystalline silicon having a needlelike oriented grain structure is found to have anisotropic electrical and thermal properties. A monolithic integrated-circuit structure having a plurality of monocrystalline silicon islands is fabricated in a polycrystalline silicon matrix having such a grain structure, with the grain direction oriented to provide maximum electrical resistivity between the monocrystalline islands, and maximum thermal conductivity toward a header or other heat sink. In one embodiment, the monocrystalline islands and polycrystalline matrix are grown by vapor deposition of silicon on a monocrystalline substrate provided with a suitable masking pattern, whereby the polycrystalline material grows on the mask concurrently with the growth of monocrystalline silicon on the unmasked areas of the substrate.

公开(公告)号：US3620833A

公开(公告)日：1971-11-16

申请号：US3620833D

申请日：1966-12-23

Applicant: TEXAS INSTRUMENTS INC

Inventor： GLEIM PAUL S ,  BEAN KENNETH E

IPC: H01L21/00 ,  H01L21/762 ,  C23C13/04 ,  H01L1/00

CPC classification number: H01L21/76297 ,  H01L21/00 ,  Y10S148/043 ,  Y10S148/085 ,  Y10S148/115 ,  Y10S148/122 ,  Y10S148/152 ,  Y10S438/974 ,  Y10S438/977

Abstract: An integrated circuit structure having a plurality of monocrystalline semiconductor islands separated by a layer of dielectric insulation is fabricated by a method which begins with the formation of a plurality of nucleation sites upon a supported layer of insulating material. A single crystallite of semiconductor material is then vapor deposited at each of the nucleation sites. The crystallites are then covered by the vapor deposition of a second layer of dielectric material. The second layer of dielectric material is then supported by the deposition of a substrate material, followed by removal of the original supporting body to expose the first layer of insulating material, thereby providing a plurality of electrically isolated regions of single crystallite semiconductor material embedded in a suitable substrate. The structure is then completed by forming and interconnecting desired circuit components within the single crystallites.

公开(公告)号：US3456616A

公开(公告)日：1969-07-22

申请号：US3456616D

申请日：1968-05-08

Applicant: TEXAS INSTRUMENTS INC

Inventor： GLEIM PAUL S ,  SHERER JIMMIE B

IPC: C23C14/34 ,  C23C16/00 ,  C23C13/04 ,  C23C13/12

CPC classification number: C23C14/34 ,  C23C16/00

公开(公告)号：US3571919A

公开(公告)日：1971-03-23

申请号：US3571919D

申请日：1968-09-25

Applicant: TEXAS INSTRUMENTS INC

Inventor： GLEIM PAUL S ,  BEAN KENNETH E ,  EMMONS STEPHEN P

IPC: H01L21/60 ,  H01L21/762 ,  H01L23/29

CPC classification number: H01L21/76297 ,  H01L23/29 ,  H01L24/81 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/19042 ,  H01L2924/19043 ,  Y10S148/05 ,  Y10S148/085 ,  Y10S148/148 ,  Y10S438/928 ,  Y10S438/977 ,  H01L2924/00

Abstract: Disclosed is a method of forming a semiconductor device having circuit components in a semiconductor substrate which are electrically isolated from each other by a layer of etch resistant material. During the fabrication of the device the etch resistant material acts as an etch barrier that prevents the etchant from removing any portion of the semiconductor substrate used for the circuit components.

公开(公告)号：US3549411A

公开(公告)日：1970-12-22

申请号：US3549411D

申请日：1967-06-27

Applicant: TEXAS INSTRUMENTS INC

Inventor： BEAN KENNETH E ,  GLEIM PAUL S

IPC: C04B41/87 ,  C01B21/068 ,  C23C16/34 ,  G02B1/10 ,  H01B3/12 ,  H01G4/33 ,  H01L21/318 ,  H01L31/02 ,  H01L31/0216 ,  B44D1/02

CPC classification number: H01L31/02168 ,  C23C16/345 ,  H01L21/3185 ,  Y02E10/50 ,  Y10S148/043 ,  Y10S148/097 ,  Y10S148/113 ,  Y10S148/114 ,  Y10S148/118 ,  Y10S148/12

公开(公告)号：US3533862A

公开(公告)日：1970-10-13

申请号：US3533862D

申请日：1967-08-21

Applicant: TEXAS INSTRUMENTS INC

Inventor： GLEIM PAUL S ,  TEAGUE EDGER CLAYTON

IPC: H01L21/00 ,  H01L21/22 ,  H01L7/34 ,  H01L7/36

CPC classification number: H01L21/00 ,  H01L21/22 ,  Y10S148/007 ,  Y10S438/916 ,  Y10S438/925

公开(公告)号：US3505107A

公开(公告)日：1970-04-07

申请号：US3505107D

申请日：1966-01-03

Applicant: TEXAS INSTRUMENTS INC

Inventor： GLEIM PAUL S

IPC: C23C16/14 ,  H01L21/762 ,  B44D1/18 ,  H01L15/00

CPC classification number: C23C16/14 ,  H01L21/76297 ,  Y10S148/085 ,  Y10S148/122 ,  Y10S428/901 ,  Y10T29/49982 ,  Y10T428/24545

公开(公告)号：US3421055A

公开(公告)日：1969-01-07

申请号：US3421055D

申请日：1965-10-01

Applicant: TEXAS INSTRUMENTS INC

Inventor： BEAN KENNETH E ,  GLEIM PAUL S

IPC: H01L21/00 ,  H01L21/20 ,  H01L3/00 ,  H01L5/00

CPC classification number: H01L21/02381 ,  H01L21/00 ,  H01L21/02532 ,  H01L21/02639 ,  Y10S148/026 ,  Y10S148/043 ,  Y10S148/05 ,  Y10S148/051 ,  Y10S148/106 ,  Y10S148/164 ,  Y10T428/24926