公开(公告)号：US09065430B2

公开(公告)日：2015-06-23

申请号：US14258771

申请日：2014-04-22

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Sumantra Seth ,  Somasunder Kattepura Sreenath ,  Sujoy Chinmoy Chakravarty ,  Arakali Abhijith

IPC: H03K19/094 ,  G06F13/20 ,  H03K3/012 ,  G06F1/26 ,  H03K19/0185 ,  H02J7/00

CPC classification number: H03K3/012 ,  G06F1/26 ,  H02J2007/0062 ,  H03K19/0185

Abstract: Architecture for VBUS pulsing in an Ultra Deep Sub Micron (UDSM) process for ensuring USB-OTG (On The Go) session request protocol, the architecture being of the type wherein at least a charging circuit is deployed, uses a diode-means connected in a forward path of the charging circuit. The architecture might include a diode-divider including nodes and connected from VBUS in said charging circuit. One embodiment uses both charging and discharging circuits comprising transistors. The charging circuit transistor might comprise a PMOS transistor and the discharging circuit transistor might comprise a NMOS transistor. The architecture might include a three resistance string of a total resistance value approximating 100K Ohms connected between said VBUS and ground, wherein the discharging circuit transistor might comprise a drain extended NMOS transistor. The charging and discharging circuit transistors have VDS and VGD of about 3.6V, whereby high VGS transistors are not needed.

Abstract translation: 用于确保USB-OTG（On Go Go）会话请求协议的Ultra Deep Sub Micron（UDSM）过程中的VBUS脉冲的架构，该体系结构是至少部署充电电路的类型，其使用连接在 充电电路的前进路径。 该架构可以包括二极管分压器，其包括节点并且在所述充电电路中从VBUS连接。 一个实施例使用包括晶体管的充电和放电电路。 充电电路晶体管可以包括PMOS晶体管，并且放电电路晶体管可以包括NMOS晶体管。 该结构可以包括连接在所述VBUS和地之间的接近100K欧姆的总电阻值的三个电阻串，其中放电电路晶体管可以包括漏极延伸的NMOS晶体管。 充电和放电电路晶体管具有约3.6V的VDS和VGD，由此不需要高VGS晶体管。

公开(公告)号：US20140247071A1

公开(公告)日：2014-09-04

申请号：US14258771

申请日：2014-04-22

Applicant: Texas Instruments Incorporated

Inventor： Sumantra Seth ,  Somasunder Kattepura Sreenath ,  Sujoy Chinmoy Chakravarty ,  Arakali Abhijith

IPC: H03K3/012

CPC classification number: H03K3/012 ,  G06F1/26 ,  H02J2007/0062 ,  H03K19/0185

Abstract: Architecture for VBUS pulsing in an Ultra Deep Sub Micron (UDSM) process for ensuring USB-OTG (On The Go) session request protocol, the architecture being of the type wherein at least a charging circuit is deployed, uses a diode-means connected in a forward path of the charging circuit. The architecture might include a diode-divider including nodes and connected from VBUS in said charging circuit. One embodiment uses both charging and discharging circuits comprising transistors. The charging circuit transistor might comprise a PMOS transistor and the discharging circuit transistor might comprise a NMOS transistor. The architecture might include a three resistance string of a total resistance value approximating 100K Ohms connected between said VBUS and ground, wherein the discharging circuit transistor might comprise a drain extended NMOS transistor. The charging and discharging circuit transistors have VDS and VGD of about 3.6V, whereby high VGS transistors are not needed.

Abstract translation: 用于确保USB-OTG（On Go Go）会话请求协议的Ultra Deep Sub Micron（UDSM）过程中的VBUS脉冲的架构，该体系结构是至少部署充电电路的类型，其使用连接在 充电电路的前进路径。 该架构可以包括二极管分压器，其包括节点并且在所述充电电路中从VBUS连接。 一个实施例使用包括晶体管的充电和放电电路。 充电电路晶体管可以包括PMOS晶体管，并且放电电路晶体管可以包括NMOS晶体管。 该结构可以包括连接在所述VBUS和地之间的接近100K欧姆的总电阻值的三个电阻串，其中放电电路晶体管可以包括漏极延伸的NMOS晶体管。 充电和放电电路晶体管具有约3.6V的VDS和VGD，由此不需要高VGS晶体管。