公开(公告)号：US20250048721A1

公开(公告)日：2025-02-06

申请号：US18228385

申请日：2023-07-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Eung Jung Kim ,  Thomas Grebs ,  Sunglyong Kim ,  Sungho Beck ,  Wei Fu ,  Xiaochun Zhao ,  Arjun Pankaj

IPC: H01L29/78 ,  H01L27/06 ,  H01L27/092 ,  H01L29/06 ,  H01L29/40 ,  H01L29/66 ,  H01L29/786

Abstract: Described examples include an integrated circuit having first and second transistors. The first transistor includes a plurality of trenches extending into a semiconductor substrate and a plurality of source regions, each source region located between a pair of adjacent trenches. A first source terminal is connected to the plurality of source regions. The second transistor includes a central source region between a pair of the trenches and a second source terminal connected to the central source region. The second source terminal is conductively isolated from the first source terminal.