公开(公告)号：US20240145293A1

公开(公告)日：2024-05-02

申请号：US17977403

申请日：2022-10-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Hao YANG ,  Asad HAIDER ,  Guruvayurappan MATHUR ,  Abbas ALI ,  Alexei SADOVNIKOV ,  Umamaheswari AGHROAM

IPC: H01L21/762 ,  H01L29/06

CPC classification number: H01L21/76229 ,  H01L21/76237 ,  H01L29/0649

Abstract: Active semiconductor devices in an integrated circuit are provided lateral electrical isolation by surrounding narrow deep trench isolation regions that are merged at shared portions of the narrow deep trench isolation regions. A wide deep trench isolation region laterally surrounds the merged narrow deep trench isolation regions.